A0-VS122PA300M7-L757F7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;型号: | A0-VS122PA300M7-L757F7 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
文件: | 总17页 (文件大小:1579K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
1200 V / 300 A
VINcoDUAL E3
Features
VINco E3 housing
● IGBT M7 technology with low V CEsat
and improved EMC behavior
● New SoLid Cover Technology for higher reliability
● Industry standard housing
● Press-fit pin and pre-applied phase-change
● Thermal Interface Material available
Schematic
Target applications
● Industrial Drives
● Power Supply
● UPS
Types
● A0-VS122PA300M7-L757F70
● A0-VP122PA300M7-L757F70T
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
315
600
656
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
1
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
259
600
473
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
18,1
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
mm
mm
16,2
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
2
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,03
300
25
5,4
6
6,6
V
V
25
1,61
1,82
1,91
2,05
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
510
µA
nA
Ω
20
1500
none
63000
2100
840
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
±15
600
300
3800
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,14
K/W
Dynamic
25
223
226
227
td(on)
125
150
25
Turn-on delay time
17
tr
Rise time
125
150
25
19
21
254
Rgoff = 1 Ω
Rgon = 1 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
281
290
76
103
±15
600
307
tf
114
6,809
9,370
10,446
19,625
27,523
29,844
Qr
FWD
Qr
FWD
Qr
FWD
= 34,4 μC
= 48,8 μC
= 54 μC
Eon
Turn-on energy (per pulse)
mWs
Eoff
Turn-off energy (per pulse)
*Including paralel device’s leakage current
Copyright Vincotech
3
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Diode
Static
25
1,82
1,96
1,97
2,15
180
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
1200
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,20
K/W
Dynamic
25
479
506
515
IRRM
125
150
25
Peak recovery current
A
185
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
334
369
ns
di/dt = 20088 A/μs
34,386
48,784
53,965
16,885
24,500
27,559
10178
9155
8498
di/dt = 16728 A/μs ±15
di/dt = 16130 A/μs
600
307
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 493 Ω
-5
+5
245
1,4
mW
mW/K
K
B(25/50) Tol. ±2 %
B(25/100) Tol. ±2 %
3375
3437
B-value
K
Vincotech NTC Reference
K
Copyright Vincotech
4
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,14
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,06E-02
2,32E-02
3,01E-02
4,46E-02
1,79E-02
8,61E-03
6,07E+00
1,29E+00
2,03E-01
4,88E-02
1,30E-02
4,01E-04
Copyright Vincotech
5
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
D =
single pulse
80
I C=
VGE
VCC
300
A
V
V
Ts
=
ºC
V
=
=
±15
600
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
6
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,20
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
2,04E-02
2,34E-02
3,69E-02
6,34E-02
3,60E-02
7,69E-03
1,29E-02
5,59E+00
1,13E+00
2,01E-01
4,50E-02
1,31E-02
1,56E-03
3,42E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
7
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
1
V
V
j
:
125 °C
150 °C
600
±15
307
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
Ω
Ω
1
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
1
V
V
Ω
:
600
±15
307
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
8
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
1
°C
150
600
±15
307
°C
V
Tj =
Tj =
V
V
Ω
Ω
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
1
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t t
t t
t
t
t
t
25 °C
600
±15
1
V
V
Ω
600
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
:
Tj
125 °C
150 °C
±15
307
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
9
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
25 °C
V
600
±15
307
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
±15
1
V
:
Tj
125 °C
150 °C
:
Tj
=
=
Ω
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I
I
I
I
I
I
600
25 °C
V
V
600
±15
307
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
±15
1
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
VGE
I C
=
Ω
R gon
=
Copyright Vincotech
10
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R gon
)
diF
/
dt
diF
/
dt
t
t
t
t
t
t
t
t
dir r/d
t
dir r
/dt
i
i
i
i
i
i
i
i
At
VCE
=
600
±15
1
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
307
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
=
=
1
1
R gon
R goff
Ω
Copyright Vincotech
11
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switching Definitions
General conditions
=
=
=
125 °C
1 Ω
T j
Rgon
R goff
1 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VCE
VGE
tEoff
VCE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
600
V
600
305
V
305
A
A
0,281
0,910
μs
μs
0,226
0,437
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
600
V
600
V
VC (100%) =
I C (100%) =
VC (100%) =
I C (100%) =
305
A
305
A
0,103
μs
0,019
μs
t f
=
tr =
Copyright Vincotech
12
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Poff
Eon
Pon
tEoff
tEon
183,29
27,52
0,91
kW
mJ
μs
183,29
9,37
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
t Eoff
=
tEon
=
0,44
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
600
V
VF (100%) =
I F (100%) =
I RRM (100%) =
305
A
-506
0,334
A
μs
t rr
=
Copyright Vincotech
13
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Half-Bridge Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Prec
Qr
Erec
tErec
I F (100%) =
Q r (100%) =
305
A
P rec (100%) =
Erec (100%) =
183,29
24,50
0,69
kW
mJ
μs
48,78
0,69
μC
μs
t Qr
=
tErec =
Copyright Vincotech
14
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Ordering Code & Marking
Version
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
without thermal paste 17 mm housing with Press-fit
with thermal paste 17 mm housing with Press-fit pins
Ordering Code
A0-VS122PA300M7-L757F70
A0-VS122PA300M7-L757F70-/3/
A0-VP122PA300M7-L757F70T
A0-VP122PA300M7-L757F70T-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
NN-NNNNNNNNNNNNNN-TTTTTTVV
VIN WWYY LLLLL SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
Function
Therm1
Therm2
G12
7,24
-0,45
2
11,06 -0,45
60,58 -0,45
3
4
64,4
-0,45
S12
5
87,26 -0,45
C12
6
-
-
-
-
Ph
7
Ph
8
37,72 57,95
33,92 57,95
G11
9
S11
10
11
-
-
-
-
DC-
DC+
Copyright Vincotech
15
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12
IGBT
1200 V
300 A
300 A
Half-Bridge Switch
D11 , D12
Rt
FWD
NTC
1200 V
Half-Bridge Diode
Thermistor
Copyright Vincotech
16
06 Apr. 2017 / Revision 1
A0-VS122PA300M7-L757F70
A0-VP122PA300M7-L757F70T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 24
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco E3 packages see vincotech.com website.
Package data
Package data for VINco E3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Correct package data and marking; set Rgon/Rgoff to 1 Ohm,
A0-VS122PA300M7-L757F70-D2-14
27 Oct. 2017
All
adjust collector emitter cut-off current
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
06 Apr. 2017 / Revision 1
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SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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