V23990-K203-B-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-K203-B-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总18页 (文件大小：1824K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990ꢀK203ꢀBꢀPM
datasheet
MiniSKiiP® 1 PIM
Features
600 V / 15 A
MiniSKiiP® 1 housing
● Solderless interconnection
● Trench Fieldstop IGBT3 technology
Target Applications
Schematic
● Industrial drives
Types
● V23990ꢀK203ꢀBꢀPM
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
1600
29
V
A
T j = T jmax
T s = 80 °C
I FSM
Surge (nonꢀrepetitive) forward current
I2tꢀvalue
220
240
A
t p = 10 ms
half sine wave
I 2
t
A2s
P tot
T j = T jmax
T s = 80 °C
Power dissipation
46
W
T jmax
Maximum Junction Temperature
150
°C
Inverter Switch / Brake Switch
V CE
I C
Collectorꢀemitter breakdown voltage
600
20
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC collector current
I CRM
P tot
V GE
t p limited by T jmax
T j = T jmax
Repetitive peak collector current
Power dissipation
45
A
53
W
V
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
6
µs
V
360
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode / Brake Diode
V RRM
I F
I FRM
P tot
Repetitive peak reverse voltage
600
20
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
40
A
38
W
°C
T jmax
Maximum Junction Temperature
175
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
°C
°C
ꢀ40…+(T jmax ꢀ 25)
Operation temperature under switching condition
Isolation Properties
Isolation voltage
V is
t
= 2 s
DC Test Voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative Tracking Index
CTI
copyright Vincotech
2
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A]
V GS [V]
T j [°C]
Min
Max
V DS [V] I D [A]
Rectifier Diode
25
125
25
125
25
125
1,51
1,42
0,86
0,79
0,03
0,03
V F
V to
r t
Forward voltage
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
25
25
ꢁ
I r
1500
25
0,05
mA
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
K/W
R th(j-s)
Thermal resistance junction to sink
1,50
Inverter Switch / Brake Switch
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,00021
15
25
5
5,8
6,5
1,9
V
V
25
150
1,1
1,73
1,87
15
0
600
0
25
25
0,0085
300
mA
nA
ꢁ
20
none
25
150
25
150
25
150
25
150
25
150
25
25
23
25
Rise time
30
ns
183
202
104
109
0,46
0,58
0,36
0,46
t d(off)
t f
Turnꢀoff delay time
R goff = 8 ꢁ
R gon = 16 ꢁ
0/15
300
15
Fall time
E on
Turnꢀon energy loss
mWs
pF
E off
C ies
C oss
C rss
Q G
Turnꢀoff energy loss
150
Input capacitance
860
55
Output capacitance
f
= 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
24
0/15
480
15
87
nC
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
K/W
R th(j-s)
Thermal resistance junction to sink
1,81
Inverter Diode / Brake Diode
Diode forward voltage
25
125
25
125
25
125
25
125
25
125
25
1,44
1,42
8,5
10,3
189
275
0,64
1,12
90
1,6
V F
I RRM
15
15
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
Q rr
di F/d t = tbd A/us
Reverse recovered charge
0/15
300
µC
( di rf/dt )max
E rec
Peak rate of fall of recovery current
Reverse recovered energy
A/µs
mWs
55
0,12
0,22
125
Thermal grease
thickness ≤ 50um
λ = 1 W/mK
K/W
R th(j-s)
Thermal resistance junction to sink
2,51
Thermistor
Rated resistance
Deviation of R 100
R 100
R
Δ R/R
R
25
1000
ꢁ
%
R 100 = 1670 ꢁ
100
100
25
ꢀ3
3
1670,3125
ꢁ
Power dissipation constant
Aꢀvalue
mW/K
1/K
1/K²
7,635*10ꢀ3
1,731*10ꢀ5
B (25/50)
25
B (25/100)
Bꢀvalue
25
Vincotech NTC Reference
E
copyright Vincotech
3
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Inverter Switch / Brake Switch / Inverter Diode / Brake Diode
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
50
50
40
30
20
10
40
30
20
10
0
0
0
0
V
CE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
t p
=
t p =
250
25
ꢂs
°C
250
125
ꢂs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
16
50
40
30
20
10
0
Tj = 25 °C
12
Tj = Tjmax-25 °C
8
4
Tj = Tjmax-25 °C
Tj = 25 °C
0
0
VGE (V)
VF (V)
2
4
6
8
10
0
0,5
1
1,5
2
2,5
3
At
At
t p
=
t p
=
250
10
ꢂs
V
250
ꢂs
V CE
=
copyright Vincotech
4
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Inverter Switch / Brake Switch / Inverter Diode / Brake Diode
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
1,6
1,2
0,8
0,4
0
1,2
Eon High T
Eon High T
1
Eon Low T
Eon Low T
0,8
0,6
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T
0,4
0,2
0
I C (A)
R G ( Ω )
150
0
5
10
15
20
25
30
0
25
50
75
100
125
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
32
ꢁ
ꢁ
15
A
=
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,4
0,4
Erec
Tj = Tjmax
-25 °C
0,3
0,3
Tj = Tjmax
-25 °C
Erec
Erec
0,2
0,2
Tj = 25 °C
Tj = 25 °C
Erec
0,1
0,1
0
0
I C (A)
R G ( Ω )
150
0
5
10
15
20
25
30
0
25
50
75
100
125
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
V CE
V GE
=
=
=
V
V
=
I C =
32
ꢁ
15
A
copyright Vincotech
5
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Inverter Switch / Brake Switch / Inverter Diode / Brake Diode
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdoff
tdoff
tf
0,1
0,1
tf
tdon
tr
tdon
0,01
0,01
tr
0,001
0,001
I C (A)
R G ( Ω )
150
0
5
10
15
20
25
30
0
25
50
75
100
125
With an inductive load at
With an inductive load at
T j =
T j =
125
300
15
°C
V
125
300
15
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
32
ꢁ
ꢁ
15
A
=
16
figure 11.
FWD
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
t rr = f(R gon
)
0,6
0,5
Tj = Tjmax
-25 °C
trr
0,5
trr
0,4
0,3
0,2
0,1
Tj = Tjmax
-25 °C
trr
0,4
0,3
0,2
0,1
0
trr
Tj = 25 °C
Tj = 25 °C
0
0
25
50
75
100
125
150
I
C (A)
R g on ( Ω )
0
5
10
15
20
30
25
At
T j =
At
T j =
V R =
I F =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
=
V
A
=
V GE =
32
ꢁ
15
V
copyright Vincotech
6
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Inverter Switch / Brake Switch / Inverter Diode / Brake Diode
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
2,4
1,6
Tj = Tjmax
-25 °C
Qrr
Qrr
2
Tj = Tjmax
1,2
0,8
0,4
-25 °C
1,6
Qrr
Tj = 25 °C
1,2
0,8
0,4
0
Qrr
Tj = 25 °C
0
0
I C (A)
R g on ( Ω)
150
0
5
10
15
20
25
30
25
50
75
100
125
At
At
T j =
T j =
V R =
I F =
°C
°C
25/125
300
15
25/125
300
15
V CE
V GE
=
=
V
V
ꢁ
V
A
V
R gon
=
V GE =
32
15
figure 15.
FWD
figure 16.
Typical reverse recovery current as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
I RRM = f(R gon
)
12
12
Tj = Tjmax
- 25 °C
Tj = Tjmax
- 25°C
10
8
IRRM
Tj = 25 °C
9
6
3
IRRM
IRRM
Tj = 25 °C
IRRM
6
4
2
0
0
0
I
C (A)
R gon ( Ω )
150
30
60
90
120
0
5
10
15
20
25
30
At
T j =
At
T j =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
V R =
I F =
=
V
A
=
V GE =
32
ꢁ
15
V
copyright Vincotech
7
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Inverter Switch / Brake Switch / Inverter Diode / Brake Diode
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
600
750
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
500
400
300
200
100
0
600
450
300
150
0
I C (A)
R gon ( Ω )
150
0
5
10
15
20
25
30
0
25
50
75
100
125
At
T j =
At
T j =
V R =
I F =
°C
V
°C
V
25/125
300
15
25/125
300
15
V CE
V GE
R gon
=
=
V
A
=
V GE =
32
ꢁ
15
V
figure 19.
IGBT
figure 20.
FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
102
100
101
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
102
100
101
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
1,81
K/W
2,51
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
4,79Eꢀ02 6,42E+00
2,09Eꢀ01 5,50Eꢀ01
7,40Eꢀ01 1,07Eꢀ01
5,03Eꢀ01 1,63Eꢀ02
1,67Eꢀ01 2,67Eꢀ03
1,40Eꢀ01 2,31Eꢀ04
R (K/W) Tau (s)
5,06Eꢀ02 9,02E+00
2,53Eꢀ01 6,56Eꢀ01
8,83Eꢀ01 1,18Eꢀ01
7,35Eꢀ01 2,86Eꢀ02
3,35Eꢀ01 4,82Eꢀ03
2,57Eꢀ01 6,88Eꢀ04
copyright Vincotech
8
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Inverter Switch / Brake Switch / Inverter Diode / Brake Diode
figure 21.
IGBT
figure 22.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
100
80
60
40
20
0
21
18
15
12
9
6
3
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
figure 23.
Power dissipation as a
FWD
figure 24.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
80
60
40
20
0
21
18
15
12
9
6
3
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
T j =
At
T j =
175
°C
175
°C
copyright Vincotech
9
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Inverter Switch / Brake Switch / Inverter Diode / Brake Diode
figure 25.
IGBT
figure 26.
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collectorꢀemitter voltage
I C = f(V CE
)
V GE = f(Q g)
103
20
17,5
15
10uS
100uS
1mS
120 V
102
101
100
12,5
10
480 V
10mS
100mS
7,5
5
DC
2,5
0
10-1
100
0
30
60
90
120
Q g (nC)
103
101
102
VCE (V)
At
At
D =
single pulse
I C
=
15
A
T s =
80
ºC
V GE
=
15
V
T jmax
T j =
copyright Vincotech
10
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Rectifier Diode
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
100
10-1
10-2
50
40
30
Tj = 25 °C
20
D = 0,5
0,2
Tj = Tjmax- 25 °C
0,1
0,05
0,02
0,01
0,005
0,000
10
0
0
0,5
1
1,5
2
2,5
VF (V)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
At
At
t p / T
t p
=
250
ꢂs
D =
R th(j-s)
=
1,51
K/W
figure 3.
Power dissipation as a
Rectifier Diode
figure 4.
Forward current as a
Rectifier Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
100
80
60
40
20
0
50
40
30
20
10
0
T s
(
o C)
T s (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
At
At
T j =
T j =
150
ºC
150
ºC
copyright Vincotech
11
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Thermistor
figure 1.
Thermistor
Typical PTC characteristic
as a function of temperature
R = f(T )
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
T (°C)
25
50
75
100
125
copyright Vincotech
12
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Switching Definitions Output Inverter
General conditions
T j
=
=
=
150 °C
16 ꢁ
8 ꢁ
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
250
140
%
IC
%
tdoff
120
100
80
VCE
200
VCE 90%
IC
VGE 90%
150
100
50
60
VCE
tEoff
40
VGE
tdon
20
IC 1%
0
VCE 3%
VGE10%
IC10%
VGE
0
-20
-40
tEon
-50
-0,2
0
0,2
0,4
0,6
time (µs)
2,75
2,8
2,85
2,9
2,95
3
3,05
time(µs)
3,1
V GE (0%) =
0
V
V
V
A
V GE (0%) =
0
V
V
V
A
V GE (100%) =
V C (100%) =
I C (100%) =
15
V GE (100%) =
V C (100%) =
I C (100%) =
15
300
10
300
10
t doff
=
=
0,12
0,51
ꢂs
ꢂs
t don
=
=
0,01
0,12
ꢂs
ꢂs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
120
240
fitted
VCE
%
Ic
%
IC
210
180
150
120
90
100
IC 90%
80
60
40
20
0
IC
60%
VCE
IC 40%
IC90%
tr
60
IC10%
tf
30
IC10%
-20
0
0,05
0,1
0,15
0,2
0,25
2,8
2,85
2,9
2,95
3
time (µs)
time(µs)
V C (100%) =
I C (100%) =
t f =
300
10
V
V C (100%) =
I C (100%) =
t r =
300
V
A
10
A
0,03
ꢂs
0,01
ꢂs
copyright Vincotech
13
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Switching Definitions Output Inverter
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
120
%
220
Pon
IC
%
1%
Eoff
Poff
100
180
140
100
60
80
60
40
Eon
20
VGE 90%
20
Uce3%
Uge10%
0
tEoff
tEon
-20
-20
2,8
2,85
2,9
2,95
3
3,05
-0,05
0,1
0,25
0,4
0,55
0,7
time(µs)
time (µs)
P off (100%) =
E off (100%) =
2,97
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
2,97
kW
mJ
ꢂs
0,20
0,51
0,21
0,12
t E off
=
t E on =
figure 7.
IGBT
Turnꢀoff Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
0
IRRM10%
-50
-100
-150
IRRM90%
IRRM100%
2,8
2,9
3
3,1
3,2
time(µs)
V d (100%) =
I d (100%) =
I RRM (100%) =
300
10
V
A
12
A
t rr
=
0,22
ꢂs
copyright Vincotech
14
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Switching Definitions Output Inverter
figure 8.
FWD
figure 9.
FWD
Turnꢀon Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turnꢀon Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
%
120
Erec
%
Id
Qrr
100
100
tQrr
80
tErec
50
60
40
20
0
0
-50
Prec
-100
-150
-20
2,7
2,9
3,1
3,3
3,5
3,7
2,7
2,9
3,1
3,3
3,5
3,7
time(µs)
time(µs)
I d (100%) =
Q rr (100%) =
10
A
P rec (100%) =
E rec (100%) =
2,97
0,22
0,60
kW
mJ
ꢂs
1,02
0,60
ꢂC
ꢂs
t Q rr
=
t E rec =
copyright Vincotech
15
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Ordering Code & Marking
Version
Ordering Code
with std lid (black V23990ꢀK12ꢀTꢀPM)
V23990ꢀK203ꢀBꢀ/0A/ꢀPM
V23990ꢀK203ꢀBꢀ/1A/ꢀPM
V23990ꢀK203ꢀBꢀ/0B/ꢀPM
V23990ꢀK203ꢀBꢀ/1B/ꢀPM
with std lid (black V23990ꢀK12ꢀTꢀPM) and P12
with thin lid (white V23990ꢀK13ꢀTꢀPM)
with thin lid (white V23990ꢀK13ꢀTꢀPM) and P12
VIN
Date code
Name&Ver
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
VIN
WWYY
Lot number
LLLLL
NNNNNNVV
UL
LLLLL
SSSS
Type&Ver
Serial
Date code
Datamatrix
TTTTTTTVV
SSSS
WWYY
Outline
Pad table [mm]
Pad
1
X
Y
Function
15,93
15,93
ꢀ14,6
ꢀ9,8
G5
W
2
3
Not assembled
ꢀ0,2
4
15,93
15,93
15,93
15,93
+T
ꢀT
5
7,62
6
12,62
G6
7
15,8
ꢀDC/W
8
Not assembled
12,62
9
8,23
8,23
7,73
7,73
G4
ꢀDC/V
G3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
15,8
ꢀ14,6
ꢀ9,8
V
Not assembled
Not assembled
12,62
0,53
0,53
G2
ꢀDC/U
G1
U
15,8
ꢀ0,47
ꢀ0,47
ꢀ5,47
ꢀ5,47
ꢀ7,17
ꢀ7,17
ꢀ14,6
ꢀ9,8
ꢀ5
+B
B
5,35
12,62
GB
ꢀB
15,8
Not assembled
ꢀ9,8
ꢀ8,07
+DC
ꢀ15,02
ꢀ15,8
+RECT
Not assembled
0
ꢀ15,02
ꢀ15,02
ꢀ15,02
L2
L1
9,8
15,8
ꢀRECT
Pad positions refers to center point. For more informations on pad design please see package data.
copyright Vincotech
16
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
D8, D9, D10, D11
Rectifier
IGBT
FWD
1600 V
600 V
600 V
600 V
600 V
25 A
15 A
20 A
15 A
20 A
Rectifier Diode
Inverter Switch
Inverter Diode
Brake Switch
Brake Diode
T1ꢀT6
D1ꢀD6
T7
IGBT
FWD
D7
PTC1
PTC
Thermistor
copyright Vincotech
17
03 Aug. 2016 / Revision 2
V23990ꢀK203ꢀBꢀPM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
120
Handling instructions for MiniSkiiP ® 1 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990ꢀK203ꢀBꢀD2ꢀ14
03 Aug. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
18
03 Aug. 2016 / Revision 2
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