V23990-K218-F40-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-K218-F40-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总15页 (文件大小：878K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K218-F40-PM
MiniSKiiP® 1 PACK
1200V/8A
MiniSKiiP® 1 housing
Features
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
Target Applications
Schematic
● Servo Drives
● Industrial Motor Drives
● UPS
Types
● V23990-K218-F40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
T1,T2,T3,T4,T5,T6
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
10
V
A
Tj=Tjmax
Th=80°C
ICpulse
tp limited by Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
24
A
VCE≤1200V, Tj≤Topmax
16
A
Ptot
Tj=Tjmax
Th=80°C
51
W
V
Tj≤150°C
VGE
±20
VGE=15V
tSC
10
µs
V
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
D1,D2,D3,D4,D5,D6
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
1200
10
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
24
A
38
W
°C
Tjmax
175
copyright Vincotech
1
Revision: 2.1
V23990-K218-F40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12.7
min 12.7
mm
mm
copyright Vincotech
2
Revision: 2.1
V23990-K218-F40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
V
GS [V]
VDS [V]
T1,T2,T3,T4,T5,T6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,15
0,06
200
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0003
8
V
V
1,6
1,85
2,25
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
1200
0
mA
nA
ꢁ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
109
108
30
Rise time
36
ns
225
292
91
121
0,54
0,85
0,49
0,79
td(off)
tf
Turn-off delay time
Rgoff=64ꢁ
Rgon=64ꢁ
±15
600
8
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
490
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
Reverse transfer capacitance
Gate charge
30
±15
90
nC
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,84
D1,D2,D3,D4,D5,D6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,3
2,3
2,26
4,52
6,68
269
581
0,56
1,51
38
2,8
VF
IRRM
trr
Diode forward voltage
8
8
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=64ꢁ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
28
0,21
0,64
Erec
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
2,53
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
1000
ꢁ
%
∆R/R R100=1670 ꢁ
R
-3
3
1670,313
7,635*10-3
1,731*10-5
ꢁ
A-value
B(25/50) Tol. %
B(25/100) Tol. %
1/K
1/K²
B-value
Vincotech NTC Reference
E
copyright Vincotech
3
Revision: 2.1
V23990-K218-F40-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
25
25
20
15
10
5
20
15
10
5
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
ꢀs
250
150
ꢀs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
10
25
20
15
10
Tj = 25°C
8
6
4
2
Tj = Tjmax-25°C
5
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
V
GE (V)
VF (V)
2
4
6
8
10
12
0
1
2
3
4
At
At
tp =
tp =
250
10
ꢀs
250
ꢀs
VCE
=
V
copyright Vincotech
4
Revision: 2.1
V23990-K218-F40-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
2
1,5
1
2
1,5
1
Eon High T
Eon High T
Eon Low T
Eoff High T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
0,5
0,5
0
0
I C (A)
R G ( Ω )
0
4
8
12
16
0
64
128
192
256
320
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
64
600
±15
8
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
64
Figure 7
IGBT
Figure 8
IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
1
1
Erec
0,8
0,8
Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,6
0,4
0,6
0,4
0,2
0
Erec
Erec
Tj = 25°C
Tj = 25°C
Erec
0,2
0
I C (A)
R G ( Ω )
0
4
8
12
16
0
64
128
192
256
320
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
600
°C
V
25/150
600
±15
8
°C
V
V
A
=
=
=
=
±15
V
Rgon
=
64
ꢁ
copyright Vincotech
5
Revision: 2.1
V23990-K218-F40-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tdoff
tdon
tf
tr
0,1
0,1
tf
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
4
8
12
16
0
64
128
192
256
320
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
64
°C
V
150
600
±15
8
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
64
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
1
0,8
0,6
0,4
1
trr
trr
0,8
0,6
0,4
0,2
Tj = Tjmax -25°C
Tj = Tjmax -25°C
trr
trr
Tj = 25°C
0,2
Tj = 25°C
0
0
0
64
128
192
256
320
R g on
(
Ω
)
I C (A)
0
4
8
12
16
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
°C
V
A
V
=
600
8
=
±15
V
Rgon
=
VGE =
64
ꢁ
±15
copyright Vincotech
6
Revision: 2.1
V23990-K218-F40-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2
2
Qrr
1,6
1,6
1,2
0,8
0,4
Tj = Tjmax -25°C
Qrr
Tj = Tjmax -25°C
1,2
0,8
Qrr
Tj = 25°C
Qrr
0,4
Tj = 25°C
0
0
0
I C (A)
R g on ( Ω)
0
4
8
12
16
64
128
192
256
320
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
°C
V
A
V
=
=
600
8
±15
V
Rgon
=
VGE =
64
ꢁ
±15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
12
8
Tj = Tjmax -25°C
10
8
IRRM
6
IRRM
Tj = Tjmax - 25°C
6
4
Tj = 25°C
4
IRRM
IRRM
2
0
Tj = 25°C
2
0
0
I C (A)
R gon ( Ω )
320
64
128
192
256
0
4
8
12
16
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
°C
V
A
V
=
=
600
8
±15
V
Rgon
=
VGE =
64
ꢁ
±15
copyright Vincotech
7
Revision: 2.1
V23990-K218-F40-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
400
1000
µ
µ
µ
µ
dI0/dt
dIrec/dt
dI0/dt
dIrec/dt
320
240
160
80
800
600
400
200
dIo/dtLow T
di0/dtHigh T
dIrec/dtHigh T
dIrec/dtLow T
0
0
0
I C (A)
R gon ( Ω )
0
4
8
12
16
64
128
192
256
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
V
A
V
=
=
±15
V
Rgon
=
VGE =
64
ꢁ
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
At
At
tp / T
1,84
tp / T
2,53
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,05
Tau (s)
4,8E+00
5,9E-01
1,2E-01
3,8E-02
8,5E-03
1,7E-03
R (C/W)
0,06
Tau (s)
5,7E+00
4,5E-01
8,6E-02
1,7E-02
2,8E-03
5,0E-04
0,15
0,33
0,66
1,12
0,45
0,63
0,29
0,54
0,13
0,29
copyright Vincotech
8
Revision: 2.1
V23990-K218-F40-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
100
80
60
40
20
0
12
10
8
6
4
2
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
75
60
45
30
15
0
12
10
8
6
4
2
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
9
Revision: 2.1
V23990-K218-F40-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
Figure 25
IGBT
Figure 26
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
16
)
102
14
12
10
8
240V
10uS
101
100
10-1
960V
100uS
1mS
6
10mS
4
100mS
DC
2
0
0
10-2
100
10
20
30
40
50
60
103
101
102
VCE (V)
Q g (nC)
At
At
IC
=
D =
Th =
8
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
25
50
75
100
125
T (°C)
copyright Vincotech
10
Revision: 2.1
V23990-K218-F40-PM
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
64 Ω
Rgon
Rgoff
64 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
200
%
140
%
IC
120
tdoff
160
VCE
100
VGE 90%
VCE 90%
120
VCE
80
60
40
20
0
IC
80
VGE
tdon
tEoff
40
IC 1%
IC10%
VCE 3%
VGE10%
0
VGE
tEon
3,1
-20
-40
-0,25
-0,05
0,15
0,35
0,55
0,75
time (us)
2,7
2,9
3,3
3,5
3,7
time(us)
VGE (0%) =
VGE (0%) =
-15
15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
V
V
600
8
V
600
8
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,29
0,67
ꢀs
ꢀs
0,11
0,36
ꢀs
ꢀs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
140
220
%
%
Ic
fitted
120
180
IC
100
VCE
IC 90%
140
80
VCE
IC
60
40
20
0
60%
100
IC90%
IC 40%
tr
60
IC10%
20
tf
IC10%
-20
-20
0,15
0,2
0,25
0,3
0,35
0,4
0,45
3,05
3,1
3,15
3,2
3,25
3,3
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
8
V
600
8
V
A
A
0,12
ꢀs
0,04
ꢀs
copyright Vincotech
11
Revision: 2.1
V23990-K218-F40-PM
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
180
%
%
Poff
Pon
Eoff
100
140
100
60
80
Eon
60
40
20
VGE 90%
VGE 10%
20
VCE
3%
0
tEoff
tEon
IC 1%
-20
-20
2,95
3,05
3,15
3,25
3,35
3,45
-0,2
0
0,2
0,4
0,6
0,8
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
4,79
0,79
0,67
kW
mJ
ꢀs
4,79
0,85
0,36
kW
mJ
ꢀs
tEoff
=
tEon =
Figure 7
Output inverter FWD
Turn-off Switching Waveforms & definition of trr
120
%
Id
80
trr
40
Vd
0
IRRM10%
-40
IRRM90%
-80
IRRM100%
fitted
-120
3
3,15
3,3
3,45
3,6
3,75
3,9
time(us)
Vd (100%) =
Id (100%) =
600
V
8
A
IRRM (100%) =
-7
A
trr
=
0,58
ꢀs
copyright Vincotech
12
Revision: 2.1
V23990-K218-F40-PM
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
%
Erec
%
Id
Qrr
100
100
80
60
40
20
0
50
tErec
tQrr
0
-50
Prec
-100
-20
2,9
3,15
3,4
3,65
3,9
4,15
4,4
4,65
time(us)
2,75
3,15
3,55
3,95
4,35
4,75
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
8
A
4,79
0,64
1,18
kW
mJ
ꢀs
Qrr (100%) =
1,51
1,18
ꢀC
ꢀs
tQrr
=
tErec =
copyright Vincotech
13
Revision: 2.1
V23990-K218-F40-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
with std lid (black V23990-K12-T-PM)
V23990-K218-F40-/0A/-PM
K218F40
K218F40
K218F40
K218F40
K218F40-/0A/
K218F40-/1A/
K218F40-/0B/
K218F40-/1B/
with std lid (black V23990-K12-T-PM) and P12 V23990-K218-F40-/1A/-PM
with thin lid (white V23990-K13-T-PM) V23990-K218-F40-/0B/-PM
with thin lid (white V23990-K13-T-PM) and P12 V23990-K218-F40-/1B/-PM
Outline
Pinout
copyright Vincotech
14
Revision: 2.1
V23990-K218-F40-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
15
Revision: 2.1
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