V23990-K242-A-0B-PM_技术文档

V23990-K242-A-PM

MiniSKiiP^®3 PIM

600V/75A

MiniSkiip^®3 housing

Features

● IGBT3 technology for low saturation losses

● Solderless spring contact mounting system

Target Applications

Schematic

● Industrial motor drives

Types

● V23990-K242-A-PM

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

D8,D9,D10,D11,D12,D13

Repetitive peak reverse voltage

DC forward current

V_RRM

I_FAV

1600

V

A

T_h=80°C

69

93

T_j=T_jmax

t_p=10ms

T_j=T_jmax

T_c=80°C

I_FSM

Surge forward current

700

T_j=25°C

I²t

A²s

W

I2t-value

2450

T_h=80°C

T_c=80°C

77

P_tot

Power dissipation per Diode

Maximum Junction Temperature

117

T_jmax

150

°C

T1,T2,T3,T4,T5,T6,T7

Collector-emitter break down voltage

DC collector current

V_CE

I_C

600

V

A

T_h=80°C

T_c=80°C

70

92

T_j=T_jmax

225

I_Cpulse

t_plimited by T_jmax

Repetitive peak collector current

Turn off safe operating area

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

A

VCE ≤ 1200V, Tj ≤ Top max

225

A

T_h=80°C

T_c=80°C

126

191

P_tot

T_j=T_jmax

W

V

V_GE

±20

t_SC

T_j≤150°C

6

µs

V

V_CC

V_GE=15V

360

T_jmax

Maximum Junction Temperature

175

°C

Copyright by Vincotech

1

Revision: 3.1

V23990-K242-A-PM

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

D1,D2,D3,D4,D5,D6,D7

Peak Repetitive Reverse Voltage

DC forward current

T_j=25°C

V_RRM

I_F

I_FRM

P_tot

600

V

A

T_h=80°C

T_c=80°C

55

72

45

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

A

T_h=80°C

T_c=80°C

79

W

°C

120

T_jmax

175

Thermal Properties

T_stg

T_op

Storage temperature

-40…+125

°C

Operation temperature under switching condition

Insulation Properties

Insulation voltage

Creepage distance

Clearance

V_is

t=2s

DC voltage

4000

V

min 12,7

mm

Copyright by Vincotech

2

Revision: 3.1

V23990-K242-A-PM

Characteristic Values

Conditions

Value

Typ

Parameter

Symbol

Unit

V_r[V] or

V_GE[V] or

I_C[A] or

I_F[A] or

I_D[A]

V_CE[V] or

T_j

Min

Max

V_GS[V]

V_DS[V]

D8,D9,D10,D11,D12,D13

Forward voltage

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

0,8

1,02

0,94

0,88

0,75

4

1,35

V_F

V_to

r_t

35

V

Threshold voltage (for power loss calc. only)

Slope resistance (for power loss calc. only)

Reverse current

mꢀ

mA

6

0,1

2

I_r

1500

Thermal grease

R_thJH

Thermal resistance chip to heatsink per chip

thickness≤50um

λ = 1 W/mK

0,90

K/W

T1,T2,T3,T4,T5,T6,T7

Gate emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current incl. Diode

Gate-emitter leakage current

Integrated Gate resistor

Turn-on delay time

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

5

5,8

6,5

V_GE(th)V_CE=V_GE

0,0012

75

V

1,54

1,75

V_CE(sat)

I_CES

I_GES

R_gint

t_d(on)

t_r

15

0

0,1

612

0

mA

nA

ꢀ

650

±25

4

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

217

223

27

Rise time

30

ns

266

290

55

t_d(off)

t_f

Turn-off delay time

Rgoff=8 ꢀ

Rgon=8 ꢀ

±15

300

75

Fall time

81

1,58

2,07

1,79

2,24

E_on

Turn-on energy loss per pulse

Turn-off energy loss per pulse

Input capacitance

mWs

pF

E_off

C_ies

C_oss

C_rss

Q_Gate

4700

300

145

470

Output capacitance

f=1MHz

0

25

Tj=25°C

Reverse transfer capacitance

Gate charge

±15

nC

Thermal grease

thickness≤50um

λ = 1 W/mK

R_thJH

Thermal resistance chip to heatsink per chip

0,75

K/W

D1,D2,D3,D4,D5,D6,D7

Diode forward voltage

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

1

1,54

1,6

2,6

V_F

I_RRM

t_rr

75

V

A

63,45

74,57

58,2

262,4

3,74

6,47

3216

2350

0,74

1,33

Peak reverse recovery current

Reverse recovery time

ns

Q_rr

Reverse recovered charge

Peak rate of fall of recovery current

Reverse recovered energy

Rgoff=8 ꢀ

300

µC

di(rec)max

/dt

A/µs

mWs

Erec

Thermal grease

thickness≤50um

λ = 1 W/mK

R_thJH

Thermal resistance chip to heatsink per chip

1,2

K/W

Thermistor

Rated resistance

Deviation of R100

R100

R

T=25°C

T=100°C

T=25°C

1000

ꢀ

%

∆R/R R100=1670 ꢀ

-3

3

P

1670,313

ꢀ

Power dissipation constant

A-value

mW/K

1/K

1/K²

B(25/50) Tol. %

B(25/100) Tol. %

7,635*10-3

1,731*10-5

B-value

Vincotech NTC Reference

E

Copyright by Vincotech

3

Revision: 3.1

V23990-K242-A-PM

T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7

Figure 1

T1,T2,T3,T4,T5,T6,T7 IGBT

Figure 2

T1,T2,T3,T4,T5,T6,T7 IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

225

188

150

113

75

188

150

113

75

38

0

V_CE(V)

1

2

3

4

5

1

2

3

4

5

At

t_p=

250

25

ꢁs

250

125

ꢁs

T_j=

°C

V_GEfrom

7 V to 17 V in steps of 1 V

Figure 3

T1,T2,T3,T4,T5,T6,T7 IGBT

Figure 4

D1,D2,D3,D4,D5,D6,D7 FWD

Typical transfer characteristics

Typical diode forward current as

a function of forward voltage

I_F= f(V_F)

I_C= f(V_GE

)

75

225

188

150

113

75

T_j= 25°C

60

45

30

15

T_j= T_jmax-25°C

T_j= 25°C

T_j= T_jmax-25°C

38

0

V_GE(V)

V_F(V)

2

4

6

8

10

12

0

1

2

3

At

t_p=

250

10

ꢁs

250

ꢁs

V_CE

=

V

Copyright by Vincotech

4

Revision: 3.1

V23990-K242-A-PM

T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7

Figure 5

T1,T2,T3,T4,T5,T6,T7 IGBT

Figure 6

T1,T2,T3,T4,T5,T6,T7 IGBT

Typical switching energy losses

as a function of collector current

E = f(I_C)

Typical switching energy losses

as a function of gate resistor

E = f(R_G)

6,0

5,0

4,0

3,0

2,0

1,0

0,0

6,0

5,0

4,0

3,0

2,0

1,0

0,0

E_{on High T}

E_{on Low T}

E_{off High T}

E_{on Low T}

E_{off Low T}

E_{off High T}

E_{off Low T}

I

_C(A)

R _G( Ω )

0

30

60

90

120

150

0

8

16

24

32

40

With an inductive load at

T_j=

°C

V

°C

V

A

25/125

V_CE

V_GE

=

V_CE

V_GE

I_C=

=

300

±15

8

300

±15

75

V

R_gon

R_goff

=

ꢀ

8

Figure 7

T1,T2,T3,T4,T5,T6,T7 IGBT

Figure 8

T1,T2,T3,T4,T5,T6,T7 IGBT

Typical reverse recovery energy loss

as a function of collector current

E_rec= f(I_C)

Typical reverse recovery energy loss

as a function of gate resistor

E_rec= f(R_G)

2

1,6

1,2

0,8

2

E_rec

T_j= T_jmax-25°C

1,6

T_j= T_jmax-25°C

1,2

0,8

E_rec

T_j= 25°C

E_rec

0,4

0

I _C(A)

R _G( Ω )

0

30

60

90

120

150

0

8

16

24

32

40

With an inductive load at

T_j=

°C

V

°C

V

A

25/125

V_CE

V_GE

=

V_CE

V_GE

I_C=

=

300

±15

8

300

±15

75

V

R_gon

=

ꢀ

Copyright by Vincotech

5

Revision: 3.1

V23990-K242-A-PM

T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7

Figure 9

T1,T2,T3,T4,T5,T6,T7 IGBT

Figure 10

T1,T2,T3,T4,T5,T6,T7 IGBT

Typical switching times as a

function of collector current

t = f(I_C)

Typical switching times as a

function of gate resistor

t = f(R_G)

1

t_doff

t_don

t_doff

t_don

t_f

0,1

t_r

t_f

0,01

0,001

I _C(A)

R _G( Ω )

0

30

60

90

120

150

0

8

16

24

32

40

With an inductive load at

T_j=

V_CE

V_GE

T_j=

V_CE

V_GE

I_C=

125

300

±15

8

°C

V

125

300

±15

75

°C

V

A

=

V

R_gon

R_goff

=

ꢀ

8

Figure 11

D1,D2,D3,D4,D5,D6,D7 FWD

Figure 12

D1,D2,D3,D4,D5,D6,D7 FWD

Typical reverse recovery time as a

function of collector current

t_rr= f(I_C)

Typical reverse recovery time as a

function of IGBT turn on gate resistor

t_rr= f(R_gon

)

0,4

0,3

0,2

0,4

t_rr

0,3

T_j= T_jmax-25°C

t_rr

0,2

0,1

0,0

t_rr

T_j= T_jmax-25°C

0,2

0,1

T_j= 25°C

0,0

I _C(A)

0

8

16

24

32

R _{g on}

(

Ω

)

40

0

30

60

90

120

150

At

T_j=

V_CE

V_GE

°C

V

°C

V

A

V

25/125

300

±15

8

25/125

300

=

V_R=

=

I_F=

V_GE

V

75

R_gon

=

ꢀ

±15

Copyright by Vincotech

6

Revision: 3.1

V23990-K242-A-PM

T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7

Figure 13

D1,D2,D3,D4,D5,D6,D7 FWD

Figure 14

D1,D2,D3,D4,D5,D6,D7 FWD

Typical reverse recovery charge as a

function of collector current

Q_rr= f(I_C)

Typical reverse recovery charge as a

function of IGBT turn on gate resistor

Q_rr= f(R_gon

)

10

Q_rr

8

T_j= T_jmax-25°C

Q_rr

6

4

2

0

Q_rr

T_j= 25°C

T_j= T_jmax-25°C

4

Q_rr

2

T_j= 25°C

0

I _C(A)

R _{g on}( Ω)

0

30

60

90

120

150

0

8

16

24

32

40

At

T_j=

V_CE

V_GE

°C

V

°C

V

A

V

25/125

300

±15

8

25/125

300

=

V_R=

I_F=

V_GE

V

75

R_gon

=

ꢀ

±15

Figure 15

D1,D2,D3,D4,D5,D6,D7 FWD

Figure 16

D1,D2,D3,D4,D5,D6,D7 FWD

Typical reverse recovery current as a

function of collector current

I_RRM= f(I_C)

Typical reverse recovery current as a

function of IGBT turn on gate resistor

I_RRM= f(R_gon

)

120

100

T_j= T_jmax- 25°C

T_j= T_jmax-25°C

80

90

60

30

0

T_j= 25°C

60

T_j= 25°C

I_RRM

40

I_RRM

20

0

I

_C(A)

R _gon( Ω )

0

8

16

24

32

40

0

30

60

90

120

150

At

T_j=

V_CE

V_GE

°C

V

°C

V

A

V

25/125

300

±15

8

25/125

300

=

V_R=

=

I_F=

V_GE

V

75

R_gon

=

ꢀ

±15

Copyright by Vincotech

7

Revision: 3.1

V23990-K242-A-PM

T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7

Figure 17

D1,D2,D3,D4,D5,D6,D7 FWD

Figure 18

D1,D2,D3,D4,D5,D6,D7 FWD

Typical rate of fall of forward

and reverse recovery current as a

function of collector current

dI₀/dt,dI_rec/dt = f(I_C)

Typical rate of fall of forward

and reverse recovery current as a

function of IGBT turn on gate resistor

dI₀/dt,dI_rec/dt = f(R_gon

)

4000

6000

µ

dI₀/dt

dI_rec/dt

dI_rec/dt_{Low T}

3200

2400

1600

800

0

4500

3000

1500

0

dI_o/dt_{Low T}

dI_rec/dt_{High T}

di₀/dt_{High T}

I _C(A)

R _gon( Ω )

0

30

60

90

120

150

0

8

16

24

32

40

At

T_j=

V_CE

V_GE

T_j=

°C

V

°C

V

A

V

25/125

300

=

V_R=

300

±15

8

I_F=

V_GE

V

75

R_gon

=

ꢀ

±15

Figure 19

T1,T2,T3,T4,T5,T6,T7 IGBT

Figure 20

D1,D2,D3,D4,D5,D6,D7 FWD

IGBT transient thermal impedance

as a function of pulse width

Z_thJH= f(t_p)

FWD transient thermal impedance

as a function of pulse width

Z_thJH= f(t_p)

10¹

10⁰

D = 0,5

0,2

D = 0,5

0,2

10^-1

0,1

0,05

0,02

0,01

0,005

0.000

0,05

0,02

0,01

0,005

0.000

10^-2

t _p(s)

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹1

At

t_p/ T

0,75

t_p/ T

1,20

D =

R_thJH

=

R_thJH=

K/W

IGBT thermal model values

FWD thermal model values

Thermal grease

R (C/W)

0,02

Tau (s)

9,4E+00

R (C/W)

0,02

Tau (s)

9,9E+00

0,12

1,1E+00

2,1E-01

4,0E-02

6,3E-03

4,0E-04

0,19

1,0E+00

1,8E-01

3,4E-02

6,0E-03

6,5E-04

0,41

0,54

0,14

0,27

0,04

0,11

0,02

0,07

Copyright by Vincotech

8

Revision: 3.1

V23990-K242-A-PM

T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7

Figure 21

T1,T2,T3,T4,T5,T6,T7 IGBT

Figure 22

T1,T2,T3,T4,T5,T6,T7 IGBT

Power dissipation as a

function of heatsink temperature

P_tot= f(T_h)

Collector current as a

function of heatsink temperature

I_C= f(T_h)

240

200

160

120

80

120

100

80

60

40

20

0

40

0

T _h

(

^oC)

T _h(

^oC)

0

50

100

150

200

0

50

100

150

200

At

T_j=

V_GE

175

°C

175

15

°C

V

=

Figure 23

Power dissipation as a

D1,D2,D3,D4,D5,D6,D7 FWD

Figure 24

Forward current as a

Output inverter FWD

function of heatsink temperature

P_tot= f(T_h)

I_F= f(T_h)

150

120

90

60

30

0

100

80

60

40

20

0

T _h

(

^oC)

T _h(

^oC)

0

50

100

150

200

0

50

100

150

200

At

T_j=

175

°C

175

°C

Copyright by Vincotech

9

Revision: 3.1

V23990-K242-A-PM

T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7

Figure 25

T1,T2,T3,T4,T5,T6,T7 IGBT

Figure 26

T1,T2,T3,T4,T5,T6,T7 IGBT

Gate voltage vs Gate charge

Safe operating area as a function

of collector-emitter voltage

I_C= f(V_CE

)

V_GE= f(Q_GE

15

)

10³

1mS

100uS

10mS

120V

480V

100mS

DC

12

9

10²

10¹

10⁰

6

3

0

10^-1

40

80

120

160

200

240

10⁰

10³

10¹

10²

Q

_g(nC)

V_CE(V)

At

D =

At

I_C

=

75

A

single pulse

80

T_h=

V_GE

T_j=

ºC

=

±15

V

T_jmax

ºC

Copyright by Vincotech

10

Revision: 3.1

V23990-K242-A-PM

D8,D9,D10,D11,D12,D13

Figure 1

D8,D9,D10,D11,D12,D13 diode

Figure 2

D8,D9,D10,D11,D12,D13 diode

Typical diode forward current as

a function of forward voltage

I_F= f(V_F)

Diode transient thermal impedance

as a function of pulse width

Z_thJH= f(t_p)

10¹

10⁰

10^-1

10^-2

150

120

90

60

30

0

T_j= 25°C

T_j= T_jmax-25°C

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

0.000

t _p(s)

VF (V)

0,0

0,4

0,8

1,2

1,6

2,0

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹1

At

t_p=

t_p/ T

0,90

250

ꢁs

D =

R_thJH

=

K/W

Figure 3

Power dissipation as a

D8,D9,D10,D11,D12,D13 diode

Figure 4

Forward current as a

D8,D9,D10,D11,D12,D13 diode

function of heatsink temperature

P_tot= f(T_h)

I_F= f(T_h)

180

150

120

90

120

100

80

60

40

20

0

60

30

0

T _h

(

^oC)

T _h(

^oC)

150

0

30

60

90

120

150

0

30

60

90

120

At

T_j=

150

ºC

150

ºC

Copyright by Vincotech

11

Revision: 3.1

V23990-K242-A-PM

Thermistor

Figure 1

Thermistor

Typical PTC characteristic

as a function of temperature

R_T= f(T)

PTC-typical temperature characteristic

2000

1800

1600

1400

1200

1000

25

50

75

100

125

T (°C)

Copyright by Vincotech

12

Revision: 3.1

V23990-K242-A-PM

Switching Definitions Output Inverter

General conditions

T_j

=

125 °C

8 Ω

R_gon

R_goff

8 Ω

Figure 1

Output inverter IGBT

Figure 2

Output inverter IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff

Turn-on Switching Waveforms & definition of tdon, t_Eon

(t_Eoff= integrating time for E_off

)

(t_Eon= integrating time for E_on)

210

%

120

%

I_C

180

150

t_doff

100

80

60

40

20

0

V_CE

V_{GE 90%}

V_{CE 90%}

120

V_CE

I_C

90

V_GE

t_don

t_Eoff

60

30

I_{C 1%}

I_C10%

V_{CE 3%}

V_GE10%

V_GE

0

t_Eon

-30

-0,2

-0,05

0,1

0,25

0,4

0,55

0,7

time (us)

2,6

2,75

2,9

3,05

3,2

3,35

3,5

time(us)

V_GE(0%) =

V

_GE(0%) =

-15

15

V

-15

V

V_GE(100%) =

V_C(100%) =

I_C(100%) =

V_GE(100%) =

V_C(100%) =

I_C(100%) =

V

15

V

300

75

V

300

75

V

A

t_doff

t_Eoff

=

t_don

t_Eon

=

0,29

0,53

ꢁs

0,22

0,47

ꢁs

Figure 3

Output inverter IGBT

Figure 4

Output inverter IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

120

210

fitted

%

Ic

I_C

180

150

100

V_CE

I_{C 90%}

80

120

V_CE

I_C

60

40

20

0

60%

I_C90%

90

60

30

0

I_{C 40%}

tr

I_C10%

t_f

-30

-20

2,9

3

3,1

3,2

3,3

time(us)

0,15

0,2

0,25

0,3

0,35

0,4

0,45

time (us)

0,5

V_C(100%) =

I_C(100%) =

t_f=

V_C(100%) =

I_C(100%) =

t_r=

300

V

300

V

75

A

75

A

0,08

ꢁs

0,03

ꢁs

Copyright by Vincotech

13

Revision: 3.1

V23990-K242-A-PM

Switching Definitions Output Inverter

Figure 5

Output inverter IGBT

Figure 6

Output inverter IGBT

Turn-off Switching Waveforms & definition of t_Eoff

Turn-on Switching Waveforms & definition of t_Eon

120

150

%

P_off

P_on

E_off

100

80

60

40

20

120

90

E_on

60

30

V_{GE 10%}

V_CE

3%

0

V_{GE 90%}

I_C1%

t_Eon

t_Eoff

-30

-20

2,7

2,8

2,9

3

3,1

3,2

3,3

3,4

time(us)

-0,2

-0,05

0,1

0,25

0,4

0,55

0,7

time (us)

P_off(100%) =

E_off(100%) =

P_on(100%) =

E_on(100%) =

22,50

2,24

0,53

kW

22,50

kW

mJ

ꢁs

mJ

2,07

0,47

t_Eoff

=

t_Eon=

ꢁs

Figure 7

Output inverter FWD

Turn-off Switching Waveforms & definition of t_rr

120

%

I_d

80

trr

40

V_d

fitted

I_RRM10%

0

-40

-80

I_RRM90%

I_RRM100%

-120

2,95

3,05

3,15

3,25

3,35

time(us)

V_d(100%) =

I_d(100%) =

300

75

V

A

I_RRM(100%) =

75

A

t_rr

=

0,26

ꢁs

Copyright by Vincotech

14

Revision: 3.1

V23990-K242-A-PM

Switching Definitions Output Inverter

Figure 8

Output inverter FWD

Figure 9

Output inverter FWD

Turn-on Switching Waveforms & definition of t_Qrr

(t_Qrr= integrating time for Q_rr)

Turn-on Switching Waveforms & definition of t_Erec

(t_Erec= integrating time for E_rec

)

110

120

%

E_rec

I_d

Q_rr

80

100

80

60

40

20

0

50

t_Qrr

tE_rec

20

-10

-40

P_rec

-70

-20

-100

2,9

3,1

3,3

3,5

3,7

2,9

3,1

3,3

3,5

3,7

time(us)

I_d(100%) =

P

_rec(100%) =

75

A

22,50

1,33

0,60

kW

mJ

ꢁs

Q_rr(100%) =

E_rec(100%) =

t_Erec

6,47

0,60

ꢁC

ꢁs

t_Qrr

=

Copyright by Vincotech

15

Revision: 3.1

V23990-K242-A-PM

Ordering Code and Marking - Outline - Pinout

Ordering Code & Marking

Version

Ordering Code

in DataMatrix as

K242A

in packaging barcode as

with std lid (black V23990-K32-T-PM)

V23990-K242-A-/0A/-PM

K242A-/0A/

K242A-/1A/

K242A-/0B/

K242A-/1B/

with std lid (black V23990-K32-T-PM) and P12 V23990-K242-A-/1A/-PM

with thin lid (white V23990-K33-T-PM) V23990-K242-A-/0B/-PM

with thin lid (white V23990-K33-T-PM) and P12 V23990-K242-A-/1B/-PM

K242A

Outline

Pinout

Copyright by Vincotech

16

Revision: 3.1

V23990-K242-A-PM

DISCLAIMER

The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested

values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve

reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit

described herein; neither does it convey any license under its patent rights, nor the rights of others.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written

approval of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright by Vincotech

17

Revision: 3.1


型号：	V23990-K242-A-0B-PM
厂家：	VINCOTECH
描述：	Solderless spring contact mounting system
文件：	总17页 (文件大小：2332K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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