V23990-K420-A42-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | V23990-K420-A42-PM |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总30页 (文件大小:10665K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V23990-K420-A42-PM
datasheet
MiniSKiiP® PIM 3
1200 V / 100 A
Features
MiniSKiiP® 3 16 mm housing
● Trench Fieldstop IGBT4 technology
● Si3N4 DCB for superior higher thermal performance
● Solder-free spring contact technology
● Builtin PTC
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● V23990-K420-A42-PM
Copyright Vincotech
1
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
130
300
380
±20
10
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
86
V
A
IF
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
550
1513
194
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Brake Switch
VCES
Collector-emitter voltage
1200
130
300
380
±20
10
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
86
V
A
IF
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
550
1513
194
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Rectifier Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
106
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
890
A
Single Half Sine Wave,
tp = 10 ms
3960
143
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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V23990-K420-A42-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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V23990-K420-A42-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0038
100
25
5,1
5,8
6,4
V
25
1,53
1,91
2,32
1,97
15
0
V
150
1200
0
25
25
1,3
µA
nA
Ω
20
120
7,5
6300
270
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
800
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,25
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
203,8
215,8
35
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
tr
150
25
42,4
Rgon = 4 Ω
Rgoff = 4 Ω
295,8
383,8
78
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
100
tf
ns
150
25
111,66
7,83
QrFWD=5,69 µC
QrFWD=15,08 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
12,12
5,72
150
9,25
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
2,48
2,52
2,47
VF
IR
Forward voltage
100
V
150
25
120
Reverse leakage current
Vr = 1200 V
µA
150
8800
17700
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,49
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
68,34
91,27
267,17
455,14
5,69
IRRM
Peak recovery current
A
150
25
trr
Reverse recovery time
ns
150
25
di/dt=2782 A/µs
di/dt=2203 A/µs
Qr
Recovered charge
±15
600
100
μC
150
25
15,08
1,87
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
5,42
2761
(dirf/dt)max
150
976,55
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0038
100
25
5,1
5,8
6,4
V
25
1,53
1,91
2,32
1,97
15
0
V
150
1200
0
25
25
1,3
µA
nA
Ω
20
120
7,5
6300
270
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
800
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,25
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
197,6
215,2
44
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
tr
150
25
53,8
Rgon = 4 Ω
Rgoff = 4 Ω
292,4
377,8
73,48
113,42
10,32
15,23
5,67
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
100
tf
ns
150
25
QrFWD=5,01 µC
QrFWD=14,17 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
150
8,97
Copyright Vincotech
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V23990-K420-A42-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
2,48
2,52
2,47
VF
IR
Forward voltage
100
V
150
25
120
Reverse leakage current
Vr = 1200 V
µA
150
8800
17700
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,49
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
37,76
53,34
303,85
598,95
5,01
IRRM
Peak recovery current
A
150
25
trr
Reverse recovery time
ns
150
25
di/dt=1381 A/µs
di/dt=1439 A/µs
Qr
Recovered charge
±15
600
100
μC
150
25
14,17
1,56
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
4,92
477,04
93,49
(dirf/dt)max
150
Copyright Vincotech
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V23990-K420-A42-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,1
1,21
1,1
VF
IR
Forward voltage
75
125
150
1,04
1,05
V
Reverse leakage current
Thermal
Vr = 1600 V
25
50
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,49
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
Maximum Current
Power dissipation constant
A-value
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
Copyright Vincotech
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19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,25
25 °C
Tj:
VCE
=
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,96E-02
5,08E-02
9,77E-02
1,55E-02
1,63E-02
1,35E+00
1,88E-01
4,69E-02
5,67E-03
8,02E-04
Copyright Vincotech
10
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,488
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,80E-02
6,70E-02
1,49E-01
1,57E-01
3,50E-02
3,27E-02
6,41E+00
7,56E-01
1,48E-01
5,10E-02
4,40E-03
6,96E-04
Copyright Vincotech
12
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V23990-K420-A42-PM
datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,25
25 °C
Tj:
VCE
=
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,96E-02
5,08E-02
9,77E-02
1,55E-02
1,63E-02
1,35E+00
1,88E-01
4,69E-02
5,67E-03
8,02E-04
Copyright Vincotech
13
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V23990-K420-A42-PM
datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
CE(V)
V
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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V23990-K420-A42-PM
datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,488
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,80E-02
6,70E-02
1,49E-01
1,57E-01
3,50E-02
3,27E-02
6,41E+00
7,56E-01
1,48E-01
5,10E-02
4,40E-03
6,96E-04
Copyright Vincotech
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V23990-K420-A42-PM
datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
200
150
100
50
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,49
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,81E-02
6,72E-02
1,49E-01
1,58E-01
3,51E-02
3,28E-02
6,41E+00
7,56E-01
1,48E-01
5,10E-02
4,40E-03
6,96E-04
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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V23990-K420-A42-PM
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
35
30
25
20
15
10
5
20,0
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
150 °C
600
±15
100
V
150 °C
V
A
Rgon
Rgoff
4
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
18
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
tf
-1
-1
10
10
tr
tr
-2
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
19
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
30
25
20
15
10
5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
100
80
60
40
20
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
20
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4000
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
dirr/dt ──────
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
V
A
150 °C
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
21
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
50
40
30
20
10
0
25
20
15
10
5
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
150 °C
600
±15
100
V
150 °C
V
A
Rgon
Rgoff
4
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
22
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
tf
tr
-1
-1
10
10
tr
-2
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
23
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
24
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
2000
1750
1500
1250
1000
750
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
500
250
0
0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
V
A
150 °C
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
25
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
26
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
27
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
V23990-K420-A42-/0A/-PM
V23990-K420-A42-/0B/-PM
V23990-K420-A42-/1A/-PM
V23990-K420-A42-/1B/-PM
V23990-K420-A42-/3A/-PM
V23990-K420-A42-/3B/-PM
V23990-K420-A42-/4A/-PM
V23990-K420-A42-/4B/-PM
V23990-K420-A42-/5A/-PM
V23990-K420-A42-/5B/-PM
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (3,4 W/mK, PSX-P7, silicone-free)
With thin lid (2.8mm height) + thermal grease (3,4 W/mK, PSX-P7, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
VIN
VIN
Date code
WWYY
Name&Ver
NNNNNNNVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
-25,3
-6,4
-3,2
0
Function
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
-25,9
10,82
10,82
-32,82
-32,82
4,32
2,2
+B
B
15,83
15,83
15,83
15,83
15,83
15,83
G5
E5
W
8,74
2
11,94
8,74
B
3
B
4
W
11,94
22,1
B
5
3,2
6,4
W
-B
6
W
4,32
25,3
-B
7
not assembled
not assembled
22,1
3,42
-25,3
-22,1
+rect
+rect
8
3,42
9
15,83
15,83
8,13
G6
E6
-T
not assembled
not assembled
-9,3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
25,3
-25,3
3,42
+DC
+DC
GB
EB
8,13
-22,1
+T
3,42
-6,1
not assembled
25,3
-39,32
-39,32
-39,32
-39,32
-40,22
-40,22
15,7
8,13
-DC
18,9
not assembled
-12,18
22,1
-B
41,82
41,82
41,82
0,43
E3
V
25,3
-B
-8,98
-25,3
-22,1
+rect
+rect
-5,79
V
22,1
G4
E4
G3
not assembled
not assembled
-9,3
0,43
25,3
-1,07
-25,3
-40,22
-40,22
-10,18
-10,18
+DC
+DC
L1
not assembled
not assembled
-8,98
-6,09
-25,3
-1,82
-1,82
V
V
-22,1
L1
-5,79
not assembled
not assembled
-9,5
not assembled
not assembled
25,3
-10,18
-10,18
-10,18
-10,18
-10,18
-10,18
-53,82
-53,82
L2
L2
-7,27
-14,97
-14,97
-DC
G2
E2
-6,3
22,1
6,3
-rect
-rect
L3
25,3
9,5
not assembled
-11,82
22,1
23,95
23,95
23,95
-19,22
U
U
25,3
L3
-8,63
-25,3
L1
-5,42
E1
G1
-22,1
L1
-25,3
not assembled
not assembled
-9,5
not assembled
-11,82
-19,7
-19,7
U
U
-53,82
-53,82
L2
L2
-8,62
-6,3
not assembled
-1
not assembled
6,3
17,74
17,74
-22,67
-22,67
-25,9
+B
+B
-53,82
-53,82
-53,82
-53,82
-rect
-rect
L3
2,2
9,5
22,1
-DC
-DC
+B
22,1
25,3
25,3
L3
-1
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
28
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Pinout
Identification
Component
Voltage
Current
Function
Comment
ID
T2, T1, T4, T3, T6, T5
IGBT
1200 V
100 A
Inverter Switch
D1, D2, D3, D4, D5,
FWD
1200 V
100 A
Inverter Diode
D6
T7
D7
IGBT
FWD
1200 V
1200 V
100 A
100 A
Brake Switch
Brake Diode
D8, D10, D9, D12,
D11, D13
PTC1
Rectifier
1600 V
75 A
Rectifier Diode
Thermistor
Thermistor
Copyright Vincotech
29
19 Jan. 2020 / Revision 1
V23990-K420-A42-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-K420-A42-D1-14
19 Jan. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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19 Jan. 2020 / Revision 1
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