V23990-K427-A40-0B-PM [VINCOTECH]
Trench Fieldstop IGBT4 technology;
| 型号： | V23990-K427-A40-0B-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Trench Fieldstop IGBT4 technology 双极性晶体管 |
| 文件： | 总17页 (文件大小：1717K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K427-A40-PM
MiniSKiiP® 3 PIM
1200V / 35A
MiniSKiiP® 3 housing
Features
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
● Enhanced input rectifier
Target Applications
Schematic
● Industrial Motor Drives
Types
● V23990-K427-A40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
1600
45
V
A
A
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
IFSM
Surge forward current
450
1020
77
Tj=150°C
Th=80°C
I2t
A2s
W
I2t-value
Ptot
Power dissipation per Diode
Maximum Junction Temperature
Tjmax
150
°C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
VCE
IC
ICpulse
Ptot
1200
40
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
105
112
±20
A
W
V
VGE
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
Revision: 1.1
V23990-K427-A40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Repetitive peak reverse voltage
DC forward current
VRRM
IF
IFSM
Ptot
1200
33
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp=10ms half sine
Tj=Tjmax
Surge peak forward current
Power dissipation per Diode
Maximum Junction Temperature
170
77
A
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12.7
min 12.7
mm
mm
copyright Vincotech
2
Revision: 1.1
V23990-K427-A40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,34
1,27
0,85
0,75
14
1,35
VF
Vto
rt
35
35
35
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢁ
mA
15
0,1
1,1
Ir
1500
Thermal grease
RthJH
thickness≤50ꢀm
λ=1W/mK
K/W
Thermal resistance chip to heatsink per chip
0,90
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,1
VGE(th) VCE=VGE
0,0008
35
V
V
1,6
1,87
2,30
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,005
120
600
0
mA
nA
ꢁ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
78
79
24
Rise time
29
ns
196
268
77
131
2,54
3,84
1,92
3,18
td(off)
tf
Turn-off delay time
Rgoff=16 ꢁ
Rgon=16 ꢁ
±15
600
35
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1950
155
115
203
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
960
40
nC
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,85
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
2,37
2,35
16
2,62
2,62
VF
IRRM
trr
35
35
V
A
Peak reverse recovery current
Reverse recovery time
23
336
550
2,20
5,36
63
67
0,77
2,07
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgoff=16 ꢁ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50ꢀm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,2
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
ꢁ
%
∆R/R R100=1670 ꢁ
-3
3
P
1670,313
ꢁ
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech NTC Reference
E
copyright Vincotech
3
Revision: 1.1
V23990-K427-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
80
60
40
20
80
60
40
20
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
ꢀs
250
150
ꢀs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
D1,D2,D3,D4,D5,D6,D7 FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
35
30
25
20
15
10
5
100
80
60
40
20
0
Tj = 25°C
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
1
2
3
4
5
At
At
tp =
tp =
250
10
ꢀs
250
ꢀs
VCE
=
V
copyright Vincotech
4
Revision: 1.1
V23990-K427-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
10
10
Eon High T
8
8
Eon High T
Eon Low T
6
6
Eon Low T
Eoff High T
4
4
Eoff High T
Eoff Low T
2
2
Eoff Low T
0
0
I C (A)
R G ( Ω )
0
15
30
45
60
75
0
15
30
45
60
75
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
16
600
±15
35
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
16
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
3
3
2,5
2,5
Erec
Tj = Tjmax -25°C
Tj = Tjmax -25°C
2
2
1,5
1
Erec
1,5
Tj = 25°C
Erec
1
0,5
0
Tj = 25°C
Erec
0,5
0
I C (A)
R G ( Ω )
0
15
30
45
60
75
0
15
30
45
60
75
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
600
°C
V
25/150
600
°C
V
V
A
=
=
=
=
±15
V
±15
Rgon
=
16
ꢁ
35
copyright Vincotech
5
Revision: 1.1
V23990-K427-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tf
tdoff
tf
0,1
0,1
tr
tr
tdon
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
15
30
45
60
75
0
15
30
45
60
75
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
16
°C
V
150
600
±15
35
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
16
Figure 11
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
1
1
trr
0,8
0,8
0,6
0,4
0,2
trr
Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,6
0,4
0,2
0
trr
Tj = 25°C
trr
Tj = 25°C
0
0
I C (A)
R g on ( Ω )
0
15
30
45
60
75
15
30
45
60
75
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
°C
V
A
V
=
=
600
35
±15
V
Rgon
=
VGE =
16
ꢁ
±15
copyright Vincotech
6
Revision: 1.1
V23990-K427-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
8
8
Qrr
Tj = Tjmax -25°C
6
6
4
2
Tj = Tjmax -25°C
Qrr
4
Qrr
Tj = 25°C
Tj = 25°C
2
Qrr
0
0
0
I C (A)
R g on ( Ω)
0
15
30
45
60
75
15
30
45
60
75
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
°C
V
A
V
=
=
±15
V
35
Rgon
=
VGE =
16
ꢁ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
30
80
Tj = Tjmax -25°C
25
60
40
20
20
IRRM
Tj = 25°C
15
IRRM
Tj = Tjmax - 25°C
10
5
Tj = 25°C
IRRM
0
0
0
I C (A)
R gon ( Ω )
0
15
30
45
60
75
15
30
45
60
75
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
°C
V
A
V
=
=
±15
V
35
Rgon
=
VGE =
16
ꢁ
±15
copyright Vincotech
7
Revision: 1.1
V23990-K427-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
1500
6000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
5000
4000
3000
2000
1000
0
1200
900
600
300
0
I C (A)
R gon ( Ω )
0
15
30
45
60
75
0
15
30
45
60
75
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
°C
V
A
V
=
=
±15
V
35
Rgon
=
VGE =
16
ꢁ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
At
At
tp / T
0,85
tp / T
1,2
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,09
Tau (s)
1,5E+00
2,7E-01
8,9E-02
1,4E-02
2,8E-03
R (C/W)
0,08
Tau (s)
2,1E+00
2,4E-01
6,6E-02
1,3E-02
2,3E-03
0,26
0,33
0,35
0,50
0,11
0,22
0,03
0,10
copyright Vincotech
8
Revision: 1.1
V23990-K427-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 21
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 22
T1,T2,T3,T4,T5,T6,T7 IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
240
200
160
120
80
50
40
30
20
10
0
40
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 24
Forward current as a
D1,D2,D3,D4,D5,D6,D7 FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
150
120
90
60
30
0
40
30
20
10
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
9
Revision: 1.1
V23990-K427-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 26
T1,T2,T3,T4,T5,T6,T7 IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
20
)
103
17,5
15
240V
960V
102
101
100
100uS
1mS
100mS
12,5
10
10mS
DC
7,5
5
2,5
0
0
10-1
100
50
100
150
200
250
300
103
101
102
VCE (V)
Q g (nC)
At
At
IC
=
D =
Th =
35
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
copyright Vincotech
10
Revision: 1.1
V23990-K427-A40-PM
D8,D9,D10,D11,D12,D13
Figure 1
D8,D9,D10,D11,D12,D13 diode
Figure 2
D8,D9,D10,D11,D12,D13 diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
150
120
90
60
D = 0,5
0,2
0,1
0,05
Tj = Tjmax-25°C
30
0,02
0,01
0,005
0.000
t p (s)
Tj = 25°C
0
0
0,4
0,8
1,2
1,6
2
2,4VF (V)
2,8
10-5
10-4
10-3
10-2
10-1
100
1011
At
At
tp =
tp / T
0,9
250
ꢀs
D =
RthJH
=
K/W
Figure 3
Power dissipation as a
D8,D9,D10,D11,D12,D13 diode
Figure 4
Forward current as a
D8,D9,D10,D11,D12,D13 diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
200
160
120
80
50
40
30
20
10
0
40
0
T h
(
o C)
T (
o C)
120
h
0
30
60
90
120
150
0
30
60
90
150
At
At
Tj =
Tj =
150
ºC
150
ºC
copyright Vincotech
11
Revision: 1.1
V23990-K427-A40-PM
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
T (°C)
25
50
75
100
125
copyright Vincotech
12
Revision: 1.1
V23990-K427-A40-PM
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
16 Ω
Rgon
Rgoff
16 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
180
%
130
%
tdoff
VCE
IC
110
150
VGE 90%
90
VCE 90%
120
VCE
70
90
IC
VGE
50
tdon
tEoff
60
30
10
IC 1%
30
IC10%
VCE 3%
VGE10%
-10
-30
0
tEon
VGE
-30
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
time (us)
0,85
2,7
2,8
2,9
3
3,1
3,2
3,3
3,4
time(us)
VGE (0%) =
VGE (0%) =
-15
V
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
15
V
600
35
V
600
35
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,27
0,60
ꢀs
ꢀs
0,08
0,39
ꢀs
ꢀs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
140
180
%
%
Ic
fitted
120
VCE
150
100
120
VCE
IC
IC 90%
80
90
60
30
0
IC90%
IC
60
40
20
0
60%
tr
IC 40%
IC10%
IC10%
tf
-30
-20
2,9
3
3,1
3,2
3,3
0,15
0,2
0,25
0,3
0,35
0,4
0,45
0,5
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
V
A
600
V
35
35
A
0,13
ꢀs
0,03
ꢀs
copyright Vincotech
13
Revision: 1.1
V23990-K427-A40-PM
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
180
%
Poff
100
%
Pon
Eoff
140
100
60
80
60
40
20
Eon
VGE 10%
20
VCE
3%
0
tEoff
tEon
VGE 90%
IC 1%
-20
-20
2,6
2,75
2,9
3,05
3,2
3,35
3,5
-0,2
0
0,2
0,4
0,6
0,8
time(us)
time (us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
20,88
kW
mJ
ꢀs
20,88
3,84
0,39
kW
mJ
ꢀs
3,18
0,60
tEoff
=
tEon =
Figure 7
Output inverter FWD
Turn-off Switching Waveforms & definition of trr
120
%
Id
80
trr
40
Vd
0
IRRM10%
-40
IRRM90%
IRRM100%
fitted
-80
-120
2,6
2,8
3
3,2
3,4
3,6
3,8
time(us)
Vd (100%) =
Id (100%) =
600
35
V
A
IRRM (100%) =
23
A
trr
=
0,57
ꢀs
copyright Vincotech
14
Revision: 1.1
V23990-K427-A40-PM
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
%
Erec
%
Qrr
100
100
Id
80
60
40
20
0
tQrr
50
tErec
0
-50
Prec
-100
-20
2,6
2,8
3
3,2
3,4
3,6
3,8
4
2,6
2,8
3
3,2
3,4
3,6
3,8
4
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
35
A
20,88
kW
mJ
ꢀs
Qrr (100%) =
5,40
0,80
ꢀC
ꢀs
2,10
0,80
tQrr
=
tErec =
copyright Vincotech
15
Revision: 1.1
V23990-K427-A40-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
with std lid (black V23990-K32-T-PM)
V23990-K427-A40-/0A/-PM
K427A40
K427A40
K427A40
K427A40
K427A40-/0A/
K427A40-/1A/
K427A40-/0B/
K427A40-/1B/
with std lid (black V23990-K32-T-PM) and P12 V23990-K427-A40-/1A/-PM
with thin lid (white V23990-K33-T-PM) V23990-K427-A40-/0B/-PM
with thin lid (white V23990-K33-T-PM) and P12 V23990-K427-A40-/1B/-PM
Outline
Pinout
copyright Vincotech
16
Revision: 1.1
V23990-K427-A40-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
Revision: 1.1
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