V23990-K428-A40-1B-PM [VINCOTECH]
Trench Fieldstop IGBT4 technology;
| 型号： | V23990-K428-A40-1B-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Trench Fieldstop IGBT4 technology 双极性晶体管 |
| 文件： | 总17页 (文件大小：1655K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K428-A40-PM
MiniSKiiP® 3 PIM
1200V / 50A
MiniSKiiP® 3 housing
Features
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
Target Applications
Schematic
● Industrial Drives
Types
● V23990-K428-A40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
1600
69
V
A
A
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
IFSM
Surge forward current
450
1020
77
Tj=25°C
Th=80°C
I2t-value
I2t
A2s
W
Ptot
Power dissipation per Diode
Maximum Junction Temperature
Tjmax
150
°C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
VCE
IC
ICpulse
Ptot
1200
52
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
150
133
±20
A
W
V
VGE
tSC
Tj=150°C
VGE=15V
10
µs
V
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
Revision: 4.1
V23990-K428-A40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Repetitive peak reverse voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
46
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
335
100
175
A
W
°C
Tjmax
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12.7
min 12.7
mm
mm
copyright Vincotech
2
Revision: 4.1
V23990-K428-A40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,1
1,02
0,9
0,74
0,004
0,006
1,35
VF
Vto
rt
35
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢀ
0,1
1,1
Ir
1500
mA
Thermal grease
RthJH
thickness≤50ꢁm
λ=1W/mK
K/W
Thermal resistance chip to heatsink per chip
0,90
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,4
VGE(th) VCE=VGE
0,0017
50
V
V
1,6
1,91
2,39
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
20
0,06
600
1200
0
mA
nA
ꢀ
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
111
18
Rise time
25
ns
228
298
84
125
2,66
4,46
2,78
4,58
td(off)
tf
Turn-off delay time
Rgoff=8ꢀ
Rgon=8ꢀ
±15
600
50
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
2770
205
160
380
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
nC
Thermal grease
thickness≤50ꢁm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,71
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,5
2,19
2,21
61,3
70,7
144
312
3,74
8,8
3494
950
1,38
3,48
2,9
VF
IRRM
trr
50
50
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=8ꢀ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50ꢁm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,95
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
ꢀ
%
∆R/R R100=1670 ꢀ
-3
3
P
1670,313
ꢀ
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech NTC Reference
E
copyright Vincotech
3
Revision: 4.1
V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 1
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
120
90
120
90
60
60
30
30
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
ꢁs
250
150
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
D1,D2,D3,D4,D5,D6,D7 FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
50
150
120
90
60
30
0
40
30
20
10
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
0,8
1,6
2,4
3,2
4
At
At
Tj =
tp =
Tj =
tp =
°C
°C
25/150
250
25/150
250
ꢁs
ꢁs
VCE
=
10
V
copyright Vincotech
4
Revision: 4.1
V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
10
10
Eon High T
Eon High T
8
8
Eoff High T
6
6
Eon Low T
Eon Low T
Eoff High T
Eoff Low T
4
4
Eoff Low T
2
2
0
0
I C (A)
R G ( Ω )
0
20
40
60
80
100
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
8
600
±15
50
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
8
Figure 7
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 8
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
5
4
3
2
1
0
5
4
3
2
1
0
Erec
Erec
Erec
Erec
I C (A)
R G ( Ω )
0
20
40
60
80
100
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
8
600
±15
50
V
Rgon
=
ꢀ
copyright Vincotech
5
Revision: 4.1
V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 9
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tdoff
tf
tf
tr
0,1
0,1
tdon
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
20
40
60
80
100
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
8
°C
V
150
600
±15
50
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
8
Figure 11
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,8
0,6
0,4
0,2
0
0,8
trr
0,6
0,4
0,2
trr
trr
trr
0
0
I C (A)
8
16
24
32
R g on
(
Ω
)
40
0
20
40
60
80
100
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
A
V
25/150
600
±15
8
25/150
600
=
=
V
50
Rgon
=
VGE =
ꢀ
±15
copyright Vincotech
6
Revision: 4.1
V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
15
12
9
12
10
8
Qrr
Qrr
6
6
Qrr
4
Qrr
3
2
0
0
0
I C (A)
R g on ( Ω)
0
20
40
60
80
100
8
16
24
32
40
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
A
V
25/150
600
±15
8
25/150
600
=
=
V
50
Rgon
=
VGE =
ꢀ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
150
100
80
60
40
20
0
120
90
IRRM
IRRM
60
IRRM
IRRM
30
0
0
I C (A)
R gon ( Ω )
8
16
24
32
40
0
20
40
60
80
100
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
A
V
25/150
600
±15
8
25/150
=
600
50
=
V
Rgon
=
VGE =
ꢀ
±15
copyright Vincotech
7
Revision: 4.1
V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
5000
10000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
4000
3000
2000
1000
0
8000
6000
4000
2000
0
0
I C (A)
R gon ( Ω )
0
20
40
60
80
100
8
16
24
32
40
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/150
600
±15
8
25/150
=
=
VR =
IF =
600
50
V
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
0,71
tp / T
0,95
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,11
Tau (s)
7,7E-01
1,3E-01
4,6E-02
8,2E-03
1,1E-03
R (C/W)
0,06
Tau (s)
2,5E+00
3,5E-01
7,8E-02
1,7E-02
3,6E-03
0,36
0,21
0,16
0,44
0,06
0,17
0,02
0,07
copyright Vincotech
8
Revision: 4.1
V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 21
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 22
T1,T2,T3,T4,T5,T6,T7 IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
250
200
150
100
50
80
70
60
50
40
30
20
10
0
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 24
Forward current as a
D1,D2,D3,D4,D5,D6,D7 FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
200
150
100
50
80
60
40
20
0
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
9
Revision: 4.1
V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 25
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 26
T1,T2,T3,T4,T5,T6,T7 IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
16
)
103
14
12
10
8
102
960V
240V
100uS
101
1mS
100
6
10mS
4
100mS
DC
10-1
2
0
0
50
100
150
200
250
100
101
102
103
VCE (V)
Q g (nC)
At
At
IC
=
D =
Th =
50
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
copyright Vincotech
10
Revision: 4.1
V23990-K428-A40-PM
D8,D9,D10,D11,D12,D13
Figure 1
D8,D9,D10,D11,D12,D13
Figure 2
D8,D9,D10,D11,D12,D13
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
150
120
90
60
30
0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
0
0,3
0,6
0,9
1,2
1,5
1,8
VF (V)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
1
At
At
tp / T
0,9
D =
Tj =
tp =
25/125
250
°C
RthJH
=
ꢁs
K/W
Figure 3
Power dissipation as a
D8,D9,D10,D11,D12,D13
Figure 4
Forward current as a
D8,D9,D10,D11,D12,D13
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
180
150
120
90
80
60
40
20
0
60
30
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
150
ºC
150
ºC
copyright Vincotech
11
Revision: 4.1
V23990-K428-A40-PM
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
T (°C)
25
50
75
100
125
copyright Vincotech
12
Revision: 4.1
V23990-K428-A40-PM
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
8 Ω
Rgon
Rgoff
8 Ω
Figure 1
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
T1,T2,T3,T4,T5,T6,T7 IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
160
250
IC
130
tdoff
200
150
VCE
100
VGE 90%
VCE 90%
70
%
%
VCE
IC
100
tEoff
40
VGE
IC 1%
tdon
50
10
-20
-50
IC10%
VGE10%
VCE 3%
VGE
0
tEon
-50
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
0,85
time (us)
2,8
2,9
3
3,1
3,2
3,3
3,4
3,5
3,6
time(us)
VGE (0%) =
VGE (0%) =
-15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
V
600
50
V
600
50
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,30
0,68
ꢁs
ꢁs
0,11
0,35
ꢁs
ꢁs
Figure 3
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
T1,T2,T3,T4,T5,T6,T7 IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
140
250
Ic
120
fitted
VCE
200
100
IC
IC 90%
150
80
VCE
IC
IC90%
%60
40
%100
50
60%
tr
IC 40%
20
IC10%
IC10%
0
tf
0
-20
-50
0,2
0,25
0,3
0,35
0,4
0,45
0,5
time (us)
3
3,1
3,2
3,3
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
50
V
600
50
V
A
A
0,13
ꢁs
0,03
ꢁs
copyright Vincotech
13
Revision: 4.1
V23990-K428-A40-PM
Switching Definitions Output Inverter
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
110
210
Pon
Poff
90
Eoff
170
130
70
Eon
50
%
90
%
30
50
VGE 90%
10
-10
-30
Uce3%
Uge10%
10
tEon
IC 1%
tEoff
-30
2,88
2,98
3,08
3,18
time(us)
3,28
3,38
3,48
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
0,85
time (us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
29,95
kW
mJ
ꢁs
29,95
4,46
0,35
kW
mJ
ꢁs
4,58
0,68
tEoff
=
tEon =
Figure 78
D1,D2,D3,D4,D5,D6,D7 FWD
Turn-off Switching Waveforms & definition of trr
120
80
trr
40
Id
0
%
IRRM10%
-40
fitted
-80
Vd
IRRM90%
-120
-160
IRRM100%
3
3,2
3,4
3,6
3,8
4
time(us)
Vd (100%) =
Id (100%) =
600
50
V
A
IRRM (100%) =
-71
0,31
A
trr
=
ꢁs
copyright Vincotech
14
Revision: 4.1
V23990-K428-A40-PM
Switching Definitions Output Inverter
Figure 8
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 9
D1,D2,D3,D4,D5,D6,D7 FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
Erec
Qrr
100
80
100
tQrr
tErec
50
60
%
%
0
Id
40
-50
-100
-150
20
0
Prec
-20
3
3,2
3,4
3,6
3,8
4
4,2
4,4
3
3,2
3,4
3,6
3,8
4
4,2
4,4
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
50
A
29,95
kW
mJ
ꢁs
Qrr (100%) =
8,80
1,00
ꢁC
ꢁs
3,48
1,00
tQrr
=
tErec =
copyright Vincotech
15
Revision: 4.1
V23990-K428-A40-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
with std lid (black V23990-K32-T-PM)
V23990-K428-A40-/0A/-PM
K428A40
K428A40
K428A40
K428A40
K428A40-/0A/
K428A40-/1A/
K428A40-/0B/
K428A40-/1B/
with std lid (black V23990-K32-T-PM) and P12 V23990-K428-A40-/1A/-PM
with thin lid (white V23990-K33-T-PM) V23990-K428-A40-/0B/-PM
with thin lid (white V23990-K33-T-PM) and P12 V23990-K428-A40-/1B/-PM
Outline
Pinout
copyright Vincotech
16
Revision: 4.1
V23990-K428-A40-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
Revision: 4.1
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