V23990-P544-A27Y-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P544-A27Y-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总29页 (文件大小：8713K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P544-A27Y-PM
datasheet
flowPIM 0
600 V / 15 A
Topology features
flow 0 17 mm housing
● Open Emitter configuration
● Temperature sensor
● Converter+Brake+Inverter
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Schematic
Extra features
● full configuration
Target applications
● Industrial Drives
● Embedded Drives
Types
● V23990-P544-A27Y-PM
Copyright Vincotech
1
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
22
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
45
A
Ptot
52
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
20
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
38
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
600
16
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
44
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
600
16
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
32
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
34
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
44
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00021 25
5
5,8
6,5
V
25
15
1,1
1,61
1,81
1,9(1)
15
0
V
125
600
0
25
25
0,85
300
µA
nA
Ω
20
None
800
55
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
24
0/15
0
87
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,83
K/W
25
65,92
65,76
65,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
25,92
27,36
28,16
82,08
97,28
99,84
70,77
77,18
77,64
0,21
tr
125
150
25
Rgon = 16 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
300
15
tf
125
150
25
ns
QrFWD=0,497 µC
QrFWD=1 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
0,298
0,329
0,282
0,376
0,402
mWs
mWs
QrFWD=1,17 µC
Eoff
125
150
Copyright Vincotech
4
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,79
1,67
1,95(1)
27
VF
IR
Forward voltage
15
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,51
K/W
25
6,34
8,78
IRRM
Peak recovery current
125
150
25
A
9,51
214,72
282,23
311,18
0,497
1
trr
Reverse recovery time
125
150
25
ns
di/dt=553 A/µs
di/dt=520 A/µs
di/dt=524 A/µs
Qr
Recovered charge
±15
300
15
125
150
25
μC
1,17
0,115
0,23
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
0,268
52,38
63,68
63,26
(dirf/dt)max
125
150
Copyright Vincotech
5
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00015 25
5
5,8
6,5
V
V
25
10
1,1
1,66
1,87
1,9(1)
15
0
125
600
0
25
25
0,6
µA
nA
Ω
20
300
None
551
40
Cies
pF
pF
pF
Coes
Cres
Output capacitance
f = 1 Mhz
0
25
25
Reverse transfer capacitance
17
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,15
K/W
25
34,08
31,68
31,04
28,64
31,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
32
Rgon = 32 Ω
Rgoff = 16 Ω
133,28
150,08
153,76
96,72
97,35
100,84
0,169
0,236
0,254
0,23
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
300
10
tf
125
150
25
ns
QrFWD=0,344 µC
QrFWD=0,678 µC
QrFWD=0,788 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
0,298
0,316
Copyright Vincotech
6
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,25
1,68
1,61
1,95(1)
27
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,99
K/W
25
3,82
5,68
IRRM
Peak recovery current
125
150
25
A
6,14
222,64
283,44
313,89
0,344
0,678
0,788
0,078
0,151
0,176
26,24
42,8
trr
Reverse recovery time
125
150
25
ns
di/dt=316 A/µs
di/dt=289 A/µs
di/dt=298 A/µs
Qr
Recovered charge
0/15
300
10
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
40,68
Copyright Vincotech
7
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
0,983
0,889
1,21(1)
1,1(1)
VF
IR
Forward voltage
8
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
V
CE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Short circuit withstand time as a function of VGE
IC = f(VGE
)
tsc = f(VGE)
15,0
13
12
11
10
9
12,5
10,0
7,5
8
5,0
7
2,5
6
0,0
5
10
0
2
4
6
8
10
11
12
13
14
15
16
V
GE(V)
V
GE(V)
tp
=
=
VCE
=
250
10
μs
V
At
600
25
V
25 °C
Tj:
VCE
Tj ≤
125 °C
°C
Copyright Vincotech
9
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Transient thermal impedance as a function of pulse width
Typical short circuit current as a function of VGE
ISC = f(VGE
)
Zth(j-s) = f(tp)
1
10
275
250
225
200
175
150
125
100
75
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
0
1
2
12
13
14
15
16
17
18
19
20
21
10
10
10
10
10
tp(s)
V
GE(V)
VCE
=
At
400
150
V
D =
tp / T
1,834
Tj ≤
°C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,30E-02
3,76E-01
8,46E-01
2,81E-01
1,16E-01
1,32E-01
1,29E+00
1,56E-01
5,15E-02
8,16E-03
2,04E-03
3,43E-04
figure 7.
IGBT
figure 8.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
5,0
100ms
DC
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
20
40
60
80
100
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
15
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Inverter Diode Characteristics
figure 9.
FWD
figure 10.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,513
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
9,70E-02
2,83E-01
8,79E-01
5,75E-01
4,51E-01
2,27E-01
3,90E+00
3,08E-01
6,57E-02
1,54E-02
3,41E-03
5,87E-04
Copyright Vincotech
11
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Brake Switch Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 13.
IGBT
figure 14.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0,0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
12
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
2,149
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,04E-01
2,88E-01
6,99E-01
4,91E-01
3,07E-01
2,60E-01
1,37E+00
2,01E-01
5,27E-02
1,22E-02
2,97E-03
3,80E-04
Copyright Vincotech
12
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Brake Switch Characteristics
figure 15.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Brake Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,988
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,74E-02
2,41E-01
1,22E+00
6,89E-01
4,52E-01
2,99E-01
5,59E+00
4,60E-01
6,53E-02
2,20E-02
5,14E-03
1,11E-03
Copyright Vincotech
14
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Rectifier Diode Characteristics
figure 18.
Rectifier
figure 19.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,594
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
Copyright Vincotech
15
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Thermistor Characteristics
figure 20.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Inverter Switching Characteristics
figure 21.
IGBT
figure 22.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
Eon
Eon
Eon
Eon
0,5
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0,4
Eoff
Eoff
0,3
0,2
0,1
0,0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
V
Ω
Ω
125 °C
150 °C
300
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 23.
FWD
figure 24.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
V
Ω
125 °C
150 °C
300
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Inverter Switching Characteristics
figure 25.
IGBT
figure 26.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
-1
10
-1
10
tf
td(off)
td(on)
tr
tf
tr
-2
10
-2
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
300
±15
16
°C
V
150
300
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 27.
FWD
figure 28.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
V
Ω
125 °C
150 °C
300
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
18
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Inverter Switching Characteristics
figure 29.
FWD
figure 30.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
V
Ω
125 °C
150 °C
300
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 31.
FWD
figure 32.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
12
10
8
12,5
10,0
7,5
IRM
IRM
IRM
IRM
IRM
6
5,0
IRM
4
2,5
2
0
0,0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
V
Ω
125 °C
150 °C
300
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
19
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Inverter Switching Characteristics
figure 33.
FWD
figure 34.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
700
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
600
500
400
300
200
100
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
V
Ω
125 °C
150 °C
300
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 35.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
16
8
°C
Ω
Rgon
Rgoff
=
=
Ω
Copyright Vincotech
20
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Brake Switching Characteristics
figure 36.
IGBT
figure 37.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,40
Eon
Eon
Eon
Eon
0,35
Eoff
Eoff
0,30
Eoff
Eoff
Eon
Eon
0,25
Eoff
0,20
0,15
0,10
0,05
0,00
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
300
0/15
32
V
V
Ω
Ω
125 °C
150 °C
300
0/15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 38.
FWD
figure 39.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,25
0,20
0,15
0,10
0,05
0,00
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
0/15
32
V
V
Ω
125 °C
150 °C
300
0/15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Brake Switching Characteristics
figure 40.
IGBT
figure 41.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
tf
-1
10
-1
10
tf
td(on)
tr
tr
td(on)
-2
10
-2
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
300
0/15
32
°C
V
150
300
0/15
10
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 42.
FWD
figure 43.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
0/15
32
V
V
Ω
125 °C
150 °C
300
0/15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Brake Switching Characteristics
figure 44.
FWD
figure 45.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
0/15
32
V
V
Ω
125 °C
150 °C
300
0/15
10
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 46.
FWD
figure 47.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
7
6
5
4
3
2
1
0
10
IRM
IRM
8
6
IRM
IRM
IRM
4
IRM
2
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
0/15
32
V
V
Ω
125 °C
150 °C
300
0/15
10
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Brake Switching Characteristics
figure 48.
FWD
figure 49.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
400
500
400
300
200
100
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
350
300
250
200
150
100
50
dirr/dt ──────
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
0/15
32
V
V
Ω
125 °C
150 °C
300
0/15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 50.
IGBT
Reverse bias safe operating area
IC = f(VCE
22,5
)
IC MAX
20,0
17,5
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
32
°C
Rgon
Rgoff
=
=
Ω
Ω
16
Copyright Vincotech
24
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Switching Definitions
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 53.
IGBT
figure 54.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Switching Definitions
figure 55.
FWD
figure 56.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
V23990-P544-A27Y-PM
V23990-P544-A27Y-/7/-PM
V23990-P544-A27Y-/3/-PM
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
2,7
0
Function
NTC1
NTC2
-DC
BRCG
BRCE
G6
25,5
25,5
22,8
20,1
16,2
13,5
10,8
8,1
2
3
0
4
0
5
0
6
0
7
0
E6
8
0
G5
9
5,4
0
E5
10
11
12
13
14
15
16
17
18
19
20
21
22
23
2,7
0
G4
0
0
E4
0
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
22,5
15
7,5
0
G1
0
U
7,5
G2
7,5
V
15
G3
15
W
22,8
25,5
33,5
33,5
33,5
33,5
+INV
+DC
BRC+
L1
L2
L3
Copyright Vincotech
27
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Pinout
+DC
19
+INV
18
T1
T2
T3
D13
D7
D9
D11
D1
D2
D3
G3
16
G1
12
G2
14
L1
21
U
13
L2
22
BRC+
20
V
15
L3
23
W
17
D8
D10
D12
T7
T4
T5
T6
D4
D5
D6
BRCG
4
G5
G4
10
G6
8
6
NTC
BRCE
5
E4
11
E5
9
E6
7
NTC1
1
NTC2
2
-DC
3
Identification
Component
Voltage
Current
Function
Comment
ID
T4, T1, T5, T2, T6, T3
IGBT
600 V
15 A
Inverter Switch
D1, D4, D2, D5, D3,
FWD
600 V
15 A
Inverter Diode
D6
T7
IGBT
FWD
600 V
600 V
10 A
10 A
Brake Switch
Brake Diode
D13
D8, D7, D10, D9, D12,
Rectifier
1600 V
25 A
Rectifier Diode
Thermistor
D11
NTC
Thermistor
Copyright Vincotech
28
06 May. 2022 / Revision 2
V23990-P544-A27Y-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-P544-A27Y-PM-D2-14
6 May. 2022
New Datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
06 May. 2022 / Revision 2
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