V23990-P623-F59-PM [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | V23990-P623-F59-PM |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总18页 (文件大小：8609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P623-F59-PM
datasheet
fastPACK 0 H
650 V / 50 A
Features
flow 0 17 mm housing
● High efficient H-bridge
● High-speed IGBT
● High-switching frequency
● Low inductive design
Target applications
● SMPS
● Welding
● UPS
Schematic
● Solar
Types
● V23990-P623-F59-PM
Copyright Vincotech
1
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
H-Bridge Switch
VCES
Collector-emitter voltage
650
43
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
84
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
H-Bridge Diode
VRRM
Peak repetitive reverse voltage
650
46
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
120
83
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
2
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
H-Bridge Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0005
50
25
3,3
4
4,7
V
25
1,83
2,01
2,22(1)
15
0
V
125
650
0
25
25
40
µA
nA
Ω
20
120
None
3000
50
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
11
15
520
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,13
K/W
25
61,2
62,8
62,6
9
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
10,2
11
Rgon = 8 Ω
Rgoff = 8 Ω
66,4
77,8
80,4
4,53
7,71
8,6
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
300
50
tf
125
150
25
ns
QrFWD=0,776 µC
QrFWD=1,55 µC
QrFWD=1,82 µC
0,454
0,569
0,606
0,171
0,302
0,334
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
3
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
H-Bridge Diode
Static
25
1,94
1,97
1,95
2,22(1)
3,2
VF
IR
Forward voltage
60
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,14
K/W
25
44,07
58,29
63,12
28,05
41,86
47,23
0,776
1,55
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3540 A/µs
di/dt=4127 A/µs
di/dt=4560 A/µs
Qr
Recovered charge
±15
300
50
125
150
25
μC
1,82
0,084
0,235
0,288
2585
2673
2525
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
4
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
5
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
8 V
9 V
125
100
75
50
25
0
125
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
18 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
125 °C
Tj:
VGE
=
Tj =
VGE from 8 V to 18 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
0
40
30
20
10
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
D =
tp / T
1,126
25 °C
125 °C
Tj:
V
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,12E-02
1,29E-01
4,31E-01
3,15E-01
1,31E-01
5,02E-02
8,15E+00
6,00E-01
9,13E-02
2,59E-02
5,80E-03
8,53E-04
Copyright Vincotech
6
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
175
150
125
100
75
10
0
10
-1
10
0,5
0,2
0,1
50
-2
10
0,05
0,02
0,01
0,005
0
25
-3
10
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,145
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,96E-02
1,58E-01
4,60E-01
2,26E-01
1,52E-01
6,96E-02
2,71E+00
4,48E-01
9,11E-02
2,44E-02
5,42E-03
7,31E-04
Copyright Vincotech
8
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
Ω
125 °C
150 °C
300
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
VGE
Rgon
Rgoff
8
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
125 °C
150 °C
300
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
10
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
-1
10
-1
10
td(off)
td(on)
tr
tf
tr
tf
-2
10
-2
10
-3
10
-3
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
300
±15
8
°C
V
150
300
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
125 °C
150 °C
300
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
11
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
125 °C
150 °C
300
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
125 °C
150 °C
300
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
12
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
7000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
125 °C
150 °C
300
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
13
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
H-Bridge Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
15
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
Ordering Code
Marking
Version
Ordering Code
V23990-P623-F59-PM
V23990-P623-F59-/3/-PM
Without thermal paste
With thermal paste
VIN
VIN
Type&Ver
Date code
WWYY
Lot number
Type&Ver
TTTTTTTVV
Serial
UL
UL
Date code
Lot
Serial
Text
LLLLL
SSSS
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
2
3
4
5
6
7
8
X
0
2,9
8,3
Y
Function
G11
S11
DC-
DC-
DC+
DC+
S12
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
7,2
4,7
0
0
0
0
0
0
0
0
8
10,8
19,6
22,1
29,1
32
33,5
33,5
33,5
33,5
32
29,1
22,1
19,6
10,8
8,3
G12
9
OUT1
OUT1
OUT2
OUT2
G14
10
11
12
13
14
15
16
17
18
19
20
21
22
S14
DC+
DC+
DC-
DC-
S13
G13
Therm1
Therm2
2,9
0
0
0
14,5
Copyright Vincotech
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19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
Pinout
DC+
5,6,15,16
T12
T14
D11-a,-b
D13-a,-b
G12
S12
8
7
13
14
G14
S14
OUT1
9,10
OUT2
11,12
T11
T13
D12-a,-b
D14 -a,-b
1
2
20
19
G11
S11
G13
S13
Rt
Therm1
21
Therm2
22
DC-
3,4,17,18
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14
D11, D12, D13, D14
Rt
IGBT
FWD
Thermistor
650 V
650 V
50 A
60 A
H-Bridge Switch
H-Bridge Diode
Thermistor
Copyright Vincotech
17
19 Apr. 2021 / Revision 2
V23990-P623-F59-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format
Update Thermistor
V23990-P623-F59-PM-D2-14
19 Apr. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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19 Apr. 2021 / Revision 2
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