V23990-P828-F-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P828-F-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current 局域网 功率控制 晶体管 |
| 文件： | 总16页 (文件大小：2003K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990ꢀP828ꢀFxꢀPM
datasheet
flow PACK 1
1200 V / 35 A
Features
flow1 housing
● Compact flow1 housing
● Trench Fieldstop IGBT4 Technology
● Compact and Low Inductance Design
● AlN substrate for improved performance
● Builtꢀin NTC
solder pin
Pressꢀfit pin
Target Applications
Schematic
● Motor Drive
● Power Generation
● UPS
Types
● V23990ꢀP828ꢀFꢀPM
● V23990ꢀP828ꢀFYꢀPM
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Switch
V CE
I C
Collectorꢀemitter breakdown voltage
1200
35
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC collector current
I CRM
P tot
V GE
t p limited by T jmax
T j = T jmax
Repetitive peak collector current
Power dissipation
105
158
±20
A
W
V
Gateꢀemitter peak voltage
Short circuit ratings
T j ≤ 150 °C
V GE = 15 V
t SC
V CC
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
Inverter Diode
V RRM
I F
Peak Repetitive Reverse Voltage
1200
35
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
I FRM
P tot
T jmax
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
70
A
125
175
W
°C
Maximum Junction Temperature
copyright Vincotech
1
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
ꢀ40…+150
°C
°C
Operation temperature under switching condition
Isolation Properties
Isolation voltage
V is
t = 2 s
DC Test Voltage
4000
V
Creepage distance
Clearance
min 12,7
mm
mm
solder pin / Pressꢀfit pin
12,64 / min 12,7
copyright Vincotech
2
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A]
V GS [V]
T j [°C]
Min
Max
V DS [V] I D [A]
Inverter Switch
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,0012
35
25
5
5,8
6,5
2,3
V
V
25
150
1,3
1,92
2,39
15
0
1200
0
25
25
0,015
200
mA
nA
ꢁ
20
none
25
150
25
150
25
150
25
150
25
150
25
91
94
19
Rise time
23
ns
204
264
72
109
2,02
3,09
1,76
2,81
t d(off)
t f
Turnꢀoff delay time
R goff = 16 ꢁ
R gon = 16 ꢁ
±15
600
35
Fall time
E on
Turnꢀon energy loss
mWs
pF
E off
C ies
C oss
C rss
Q G
Turnꢀoff energy loss
150
Input capacitance
1950
155
115
180
Output capacitance
f
= 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
35
nC
Thermal foil
R th(j-s)
thickness=76um
Kunze foil KUꢀALF5
Thermal resistance junction to sink
0,60
K/W
Inverter Diode
25
150
25
150
25
150
25
150
25
150
25
1,35
1,80
1,77
48
2,35
V F
I RRM
Diode forward voltage
35
35
V
A
Peak reverse recovery current
Reverse recovery time
53
251
353
3,56
6,93
2000
390
1,38
2,83
t rr
ns
Q rr
R gon = 16 ꢁ
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
600
µC
( di rf/dt )max
E rec
A/µs
mWs
150
Thermal foil
R th(j-s)
thickness=76um
Kunze foil KUꢀALF5
Thermal resistance junction to sink
0,76
K/W
Thermistor
Rated resistance
Deviation of R 100
R 25
D R /R
P
Tol. ±5%
25
4,2
4,7
2,6
5,8
kꢁ
%/K
mW
K
R 100 = 435 ꢁ
100
25
Power dissipation given EpcosꢀTyp
Bꢀvalue
210
3530
B (25/100)
Tol. ±3%
25
copyright Vincotech
3
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Output Inverter
figure 1.
Typical output characteristics
IGBT
figure 2.
Typical output characteristics
IGBT
I C = f(V CE
)
I C = f(V CE)
At
At
t p
=
t p
=
250
25
ꢂs
°C
250
150
ꢂs
°C
T j =
T j =
VGE from 7 V to 17 V in steps of 1 V
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I c = f(V GE
)
Tj = 25°C
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
At
At
t p
t p
=
=
250
10
ꢂs
250
ꢂs
V CE
=
V
copyright Vincotech
4
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Output Inverter
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I c)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/150
600
±15
16
25/150
600
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
35
V
=
I C =
ꢁ
ꢁ
A
=
16
figure 7.
IGBT
figure 8.
IGBT
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
With an inductive load at
With an inductive load at
T j =
T j =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
±15
16
V
±15
35
V
=
I C =
ꢁ
A
copyright Vincotech
5
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Output Inverter
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
With an inductive load at
With an inductive load at
T j =
T j =
150
600
±15
16
°C
V
150
600
±15
35
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
ꢁ
ꢁ
A
=
16
figure 11.
FWD
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
At
At
T j =
T j =
V R =
I F =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
±15
16
V
35
A
=
V GE =
ꢁ
±15
V
copyright Vincotech
6
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Output Inverter
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I c)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
At
At
T j =
T j =
V R =
I F =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
±15
16
V
35
A
=
V GE =
ꢁ
±15
V
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I c)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
At
At
T j =
T j =
V R =
I F =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
±15
16
V
35
A
=
V GE =
ꢁ
±15
V
copyright Vincotech
7
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Output Inverter
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
At
At
T j =
T j =
V R =
I F =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
±15
16
V
35
A
=
V GE =
ꢁ
±15
V
figure 19.
IGBT
figure 20.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10-1
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
100
1012
10-4
10-3
10-2
10-1
100
1012
At
At
t p / T
0,60
t p / T
D =
R th(j-s)
D =
R th(j-s) =
=
K/W
0,76
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W) Tau (s)
7,47Eꢀ02
1,46Eꢀ01
2,60Eꢀ01
6,55Eꢀ02
5,41Eꢀ02
1,72E+00
1,85Eꢀ01
4,38Eꢀ02
4,17Eꢀ03
5,70Eꢀ04
1,74Eꢀ02
8,57Eꢀ02
1,74Eꢀ01
2,75Eꢀ01
1,18Eꢀ01
8,80Eꢀ02
9,51E+00
1,11E+00
1,20Eꢀ01
2,41Eꢀ02
2,22Eꢀ03
3,47Eꢀ04
copyright Vincotech
8
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Output Inverter
figure 21.
IGBT
figure 22.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
figure 23.
Power dissipation as a
FWD
figure 24.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
At
At
T j =
T j =
175
°C
175
°C
copyright Vincotech
9
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Output Inverter
figure 25.
IGBT
figure 26.
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collectorꢀemitter voltage
I C = f(V CE
)
V GE = f(Q g)
103
10u
100u
10m
100m
1m
240V
DC
102
960V
101
100
10-1
100
103
101
102
At
At
D =
single pulse
I C
=
35
A
T s =
80
ºC
V GE
=
±15
T jmax
V
T j =
ºC
copyright Vincotech
10
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Thermistor
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
copyright Vincotech
11
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Switching Definitions Output Inverter
General conditions
T j
=
=
=
150 °C
16 ꢁ
16 ꢁ
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
Ic
tdoff
Uce
Ic
tEoff
Uce
Uge
Uge
tEon
V GE (0%) =
ꢀ15
V
V GE (0%) =
ꢀ15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
600
35
V
600
35
V
A
A
t doff
=
=
0,26
0,55
ꢂs
ꢂs
t don
=
=
0,09
0,32
ꢂs
ꢂs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
Uce
Ic
Uce
tr
tf
Ic
V C (100%) =
I C (100%) =
t f =
600
V
V C (100%) =
I C (100%) =
t r =
600
35
V
35
A
A
0,11
ꢂs
0,02
ꢂs
copyright Vincotech
12
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Switching Definitions Output Inverter
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
Pon
Eoff
Poff
Eon
tEon
tEoff
P off (100%) =
E off (100%) =
20,98
2,81
0,55
kW
P on (100%) =
E on (100%) =
20,98
3,09
0,32
kW
mJ
ꢂs
mJ
ꢂs
t E off
=
t E on =
figure 7.
FWD
figure 8.
IGBT
Gate voltage vs Gate charge (measured)
Turnꢀoff Switching Waveforms & definition of t rr
Id
15
80
fitted
Ud
V GE off
V GE on
=
=
ꢀ15
V
V d (100%) =
I d (100%) =
600
V
15
V
35
A
V C (100%) =
I C (100%) =
600
35
V
I RRM (100%) =
t rr
ꢀ53
0,35
A
A
=
ꢂs
Q g
=
236,86
nC
copyright Vincotech
13
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Switching Definitions Output Inverter
figure 9.
FWD
figure 10.
FWD
Turnꢀon Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turnꢀon Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
Erec
Id
Qrr
tErec
Prec
I d (100%) =
Q rr (100%) =
35
A
P rec (100%) =
E rec (100%) =
20,98
2,83
0,70
kW
mJ
ꢂs
6,93
0,70
ꢂC
ꢂs
t Qint
=
t E rec =
10-12 10-0-1212 -5 --55
-4 --44
-3
-2 --22
-1 --11
0
-201
1
11
01--01212101-21 --55
110010110010-5
0
o-4
-3-3
0-2--22
--11-1
0000
2111
1010101100
1010
1010-3
101100
101100
10110000 110010-3
101100
T
1=0130101C0-4
1010
11011000
111000
1100
10111000
copyright Vincotech
14
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 17mm housing with solder pin
with thermal paste 17mm housing with solder pin
without thermal paste 17mm housing with Pressꢀfit pin
with thermal paste 17mm housing with Pressꢀfit pin
V23990ꢀP828ꢀFꢀPM
V23990ꢀP828ꢀFꢀ/3/ꢀPM
V23990ꢀP828ꢀFYꢀPM
V23990ꢀP828ꢀFYꢀ/3/ꢀPM
VIN
Date code
Name&Ver
UL
Lot
Serial
Text
VIN
WWYY
Lot number
LLLLL
NNNNNNVV
UL
LLLLL
SSSS
Type&Ver
Serial
Date code
Datamatrix
TTTTTTTVV
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
1
Function
X
52,6
49,9
42,65
39,65
35,15
28,4
24
Y
Function
DCꢀ
DCꢀ
G6
Pin
X
Y
0
0
20
21
22
23
24
25
26
27
28
29
30
31
19,6
22,3
25
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
14,65
14,65
V
V
2
solder pin
3
0
V
4
0
S6
29,7
32,7
39,7
42,7
47,2
49,9
52,6
52,6
49,9
S3
G3
S5
G5
W
5
0
NTC1
NTC2
G4
6
0
7
0
Pressꢀfit pin
8
21
0
S4
9
12,2
9,2
0
G2
W
10
11
12
13
14
15
16
17
18
19
0
S2
W
2,7
0
DCꢀ
DCꢀ
DC+
DC+
U
DC+
DC+
0
0
0
14,65
14,65
28,6
28,6
28,6
28,6
28,6
2,7
0
2,7
U
5,4
U
9,6
S1
12,6
G1
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1,T2,T3,T4,T5,T6
IGBT
FWD
1200 V
1200 V
35 A
35 A
Inverter Switch
Inverter Diode
Thermistor
D1,D2,D3,D4,D5,D6
NTC
Thermistor
copyright Vincotech
15
27 Oct. 2016 / Revision 3
V23990ꢀP828ꢀFxꢀPM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
100
Handling instructions for flow 1 packages see vincotech.com website.
Package data for flow 1 packages see vincotech.com website.
Package data
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
New brand, Pressꢀfit version added
Pages
all
V23990ꢀP828ꢀFxꢀD3ꢀ14
27 Oct. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be
accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes
without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or
completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or
that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for
reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
copyright Vincotech
16
27 Oct. 2016 / Revision 3
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VINCOTECH
V23990-P828-FY-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail currentWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail currentWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F08-3-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F08-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F08Y-3-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F08Y-PM
Trench Fieldstop IGBT4 technologyWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F10
Compact and Low Inductance DesignWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F10-PM
Compact and Low Inductance DesignWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F108
Compact and Low Inductance DesignWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
V23990-P829-F108-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail currentWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VINCOTECH
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