V23990-P848-X4X-P1-14 [VINCOTECH]
Industrial Drives Embedded Generation;型号: | V23990-P848-X4X-P1-14 |
厂家: | VINCOTECH |
描述: | Industrial Drives Embedded Generation |
文件: | 总22页 (文件大小:1618K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
flowPIM 2 3rd
1200V/4A
Features
flow0 Housing
● 2 Clips housing in 12 and 17mm height
● Trench Fieldstop Technology IGBT4
● Optional w/o BRC
Target Applications
● Industrial Drives
Schematics
● Embedded Generation
Types
● V23990-P848-A48-PM 12mm height
● V23990-P848-A49-PM 17mm height
● V23990ꢀP848ꢀC48ꢀPM 12mm height; w/o BRC
● V23990ꢀP848ꢀC49ꢀPM 17mm height; w/o BRC
Maximum Ratings
Tj=25°C, unless otherwise specified
Value
Condition
Parameter
Symbol
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
VRRM
IFAV
1600
28
V
A
A
Th=80°C
Tc=80°C
DC current
tp=10ms
IFSM
220
Tj=25°C
I2t
A2s
W
I2t-value
240
33
Th=80°C
Tc=80°C
Ptot
Tj=Tjmax
Power dissipation per Diode
Maximum Junction Temperature
Tjmax
150
°C
Inverter Transistor
VCE
IC
ICpulse
Ptot
Collector-emitter break down voltage
DC collector current
1200
9
V
A
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tj=Tjmax
12
38
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
W
V
VGE
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Value
Condition
Parameter
Symbol
Unit
Inverter Diode
Tj=25°C
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
1200
10
V
A
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tj=Tjmax
32
37
IFRM
Ptot
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
W
°C
Tjmax
175
Brc Transistor
1200
8
VCE
IC
Collector-emitter break down voltage
DC collector current
V
A
Th=80°C
Tc=80°C
Th=80°C
Tj=Tjmax
tp=1ms
12
ICpuls
Ptot
VGE
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
Th=80°C
Tc=80°C
32
Tj=Tjmax
W
V
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
175
°C
Brc. Diode
Tj=25°C
1200
7
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
V
A
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tj=Tjmax
tp=1ms
6
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
18
Tj=Tjmax
W
°C
Tjmax
150
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
-40…+125
°C
°C
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
VDC
mm
mm
t=2s
4000
min 12,7
min 12,7
copyright Vincotech
2
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1
1,22
1,19
0,93
0,81
0,009
0,013
1,9
VF
Vto
rt
Forward voltage
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢁ
0,1
Ir
1600
mA
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50um
λ = 1 W/mK
2,12
K/W
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,00015
4
V
V
1,95
2,28
15
0
0,05
200
1200
0
mA
nA
ꢁ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
77
75
18
Rise time
23
ns
176
226
83
110
0,32
0,56
0,21
0,31
td(off)
tf
Turn-off delay time
Rgon=64Ohm
Rgoff=64Ohm
15
600
4
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
250
25
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
15
960
4
25
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,51
K/W
Inverter Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,35
1,41
1,25
5
2,2
VF
IRRM
trr
Diode forward voltage
10
10
V
A
Peak reverse recovery current
Reverse recovery time
6
248
431
0,58
1,24
95
49
0,21
0,47
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=32Ohm
15
600
uC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,56
K/W
copyright Vincotech
3
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Brc Transistor
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,00015
4
V
V
1,96
2,27
15
0,05
200
0
1200
0
mA
nA
ꢁ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
78
75
18
Rise time
24
ns
170
217
81
103
0,24
0,36
0,22
0,33
td(off)
tf
Turn-off delay time
Rgon=64Ohm
Rgoff=64Ohm
15
600
4
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
250
25
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
15
960
4
25
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,95
K/W
Brc. Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,88
1,79
2,35
250
VF
Ir
Diode forward voltage
4
4
V
ꢂA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
15
15
600
600
4
5
IRRM
trr
A
276
485
0,43
0,87
37
31
0,43
0,87
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=64Ohm
4
uC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,86
K/W
Thermistor
R25
Tol. ±13%
Tol. ±5%
Tj=25°C
19,1
22
24,9
k ꢁ
Rated resistance
R100
Tj=100°C
1411
1486
1560
ꢁ
Power dissipation given Epcos-Typ
B-value
P
Tj=25°C
Tj=25°C
210
mW
K
B(25/100)
Tol. ±3%
4000
copyright Vincotech
4
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
At
At
tp =
Tj =
tp =
Tj =
250
25
ꢂs
250
150
ꢂs
°C
°C
VGE from 7 V to 17 V in steps of 1 V
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Output inverter IGBT
Figure 4
Output inverter FRED
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
Ic = f(VGE
)
Tj = 25°C
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
At
At
tp =
tp =
250
10
ꢂs
250
ꢂs
VCE
=
V
copyright Vincotech
5
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(Ic)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
64
600
±15
4
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
64
Figure 7
Output inverter IGBT
Figure 8
Output inverter IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
600
°C
V
25/150
600
±15
4
°C
V
V
A
=
=
=
=
±15
V
Rgon
=
64
ꢁ
copyright Vincotech
6
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 9
Output inverter IGBT
Figure 10
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
64
°C
V
150
600
±15
4
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
64
Figure 11
Output inverter FRED
Figure 12
Output inverter FRED
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
At
At
Tj =
VCE
VGE
Tj =
25/150
600
°C
V
25/150
°C
V
A
V
=
=
VR =
600
4
IF =
±15
V
Rgon
=
VGE =
64
ꢁ
±15
copyright Vincotech
7
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 13
Output inverter FRED
Figure 14
Output inverter FRED
Typical reverse recovery charge as a
function of collector current
Qrr = f(Ic)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
At
At
Tj =
VCE
VGE
Tj =
25/150
600
°C
V
25/150
°C
V
A
V
=
=
VR =
600
4
IF =
±15
V
Rgon
=
VGE =
64
ꢁ
±15
Figure 15
Output inverter FRED
Figure 16
Output inverter FRED
Typical reverse recovery current as a
function of collector current
IRRM = f(Ic)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
At
At
Tj =
VCE
VGE
Tj =
25/150
600
°C
V
25/150
°C
V
A
V
=
=
VR =
600
4
IF =
±15
V
Rgon
=
VGE =
64
ꢁ
±15
copyright Vincotech
8
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 17
Output inverter FRED
Figure 18
Output inverter FRED
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
At
At
Tj =
VCE
VGE
Tj =
25/150
600
°C
25/150
600
4
°C
V
A
V
=
=
VR =
V
V
ꢁ
IF =
VGE
±15
Rgon
=
=
64
±15
Figure 19
Output inverter IGBT
Figure 20
Output inverter FRED
IGBT transient thermal impedance
FRED transient thermal impedance
as a function of pulse width
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1012
10-5
10-4
10-3
10-2
10-1
100
1012
At
At
D =
tp / T
2,51
D =
tp / T
2,56
R
thJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FRED thermal model values
R (C/W)
0,05
Tau (s)
6,2E+00
4,9E-01
8,6E-02
1,3E-02
2,2E-03
3,4E-04
R (C/W)
0,12
Tau (s)
2,8E+00
2,1E-01
4,8E-02
7,2E-03
8,8E-04
0,26
0,62
0,85
1,10
0,64
0,37
0,38
0,35
0,33
copyright Vincotech
9
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 21
Output inverter IGBT
Figure 22
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
At
At
Tj =
Tj =
VGE =
175
°C
single heating
overall heating
175
15
°C
V
Figure 23
Power dissipation as a
Output inverter FRED
Figure 24
Forward current as a
Output inverter FRED
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
At
At
Tj =
Tj =
175
°C
single heating
overall heating
175
°C
copyright Vincotech
10
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 25
Output inverter IGBT
Figure 26
Output inverter IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(Qg)
240V
10u
100u
960V
100m
10m
1m
DC
At
At
IC
=
D =
Th =
4
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
copyright Vincotech
11
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Brake
Figure 1
Brake IGBT
Figure 2
Typical output characteristics
IC = f(VCE
Brake IGBT
Typical output characteristics
IC = f(VCE
)
)
At
At
tp =
Tj =
tp =
Tj =
250
25
ꢂs
250
150
ꢂs
°C
°C
VGE from 7 V to 17 V in steps of 1 V
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Brake IGBT
Figure 4
Brake FRED
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
Tj = 25°C
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
At
At
tp =
tp =
250
10
ꢂs
250
ꢂs
VCE
=
V
copyright Vincotech
12
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Brake
Figure 5
Brake IGBT
Figure 6
Typical switching energy losses
Brake IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
as a function of gate resistor
E = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
25/150
600
±15
64
°C
V
25/150
600
±15
4
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
IC =
ꢁ
ꢁ
64
Figure 7
Brake IGBT
Figure 8
Brake IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
25/150
600
°C
V
25/150
600
±15
4
°C
V
V
A
=
=
=
=
±15
V
Rgon
=
IC =
64
ꢁ
copyright Vincotech
13
Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Brake
Figure 9
Brake IGBT
Figure 10
Typical switching times as a
Brake IGBT
Typical switching times as a
function of collector current
t = f(IC)
function of gate resistor
t = f(RG)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
25/150
600
±15
64
°C
V
25/150
600
±15
4
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
IC =
ꢁ
ꢁ
64
Figure 11
Brake IGBT
Figure 12
Brake FRED
IGBT transient thermal impedance
FRED transient thermal impedance
as a function of pulse width
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
1012
10-5
10-4
10-3
10-2
10-1
100
1012
At
At
D =
tp / T
2,95
D =
RthJH
tp / T
3,86
RthJH
=
=
K/W
K/W
copyright Vincotech
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V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Brake
Figure 13
Brake IGBT
Figure 14
Collector current as a
Brake IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
function of heatsink temperature
IC = f(Th)
At
At
Tj =
Tj =
VGE
175
ºC
175
15
ºC
V
=
Figure 15
Power dissipation as a
Brake FRED
Figure 16
Forward current as a
Brake FRED
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
At
At
Tj =
Tj =
150
ºC
150
ºC
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preliminary datasheet
Input Rectifier Bridge
Figure 1
Rectifier diode
Figure 2
Rectifier diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
Tj = 25°C
Tj = Tjmax-25°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-5
10-4
10-3
10-2
10-1
100
1012
At
At
tp =
250
ꢂs
D =
tp / T
RthJH
=
2,117
K/W
Figure 3
Power dissipation as a
Rectifier diode
Figure 4
Forward current as a
Rectifier diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
At
At
Tj =
Tj =
150
ºC
150
ºC
copyright Vincotech
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V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
RT = f(T)
copyright Vincotech
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preliminary datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
64 Ω
Rgon
Rgoff
64 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
tdoff
Ic
Uce
Ic
tEoff
Uce
Uge
Uge
tEon
VGE (0%) =
VGE (0%) =
-15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
V
600
4
V
600
4
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,23
0,59
ꢂs
ꢂs
0,08
0,32
ꢂs
ꢂs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
Uce
Ic
Uce
Ic
tr
tf
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
V
600
V
4
A
4
A
0,11
ꢂs
0,02
ꢂs
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preliminary datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEon
tEoff
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
2,41
kW
mJ
ꢂs
2,41
0,56
0,32
kW
mJ
ꢂs
0,32
0,59
tEoff
=
tEon =
Figure 7
Output inverter FRED
Figure 8
Output inverter IGBT
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
Id
Ud
fitted
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
15
V
600
V
V
4
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
600
4
V
-6
A
trr
=
A
0,43
ꢂs
40,28
nC
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preliminary datasheet
Switching Definitions Output Inverter
Figure 9
Output inverter FRED
Figure 10
Output inverter FRED
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
Erec
Qrr
Id
tErec
Prec
Id (100%) =
Prec (100%) =
Erec (100%) =
4
A
2,41
kW
mJ
ꢂs
Qrr (100%) =
1,24
1,00
ꢂC
ꢂs
0,47
1,00
tQint
=
tErec =
10-12 10-0-1212 -5 --55
-4 --44
-2 --22
--11
10-11100
00
-201
1
11
01-01-212101-21 --55
110010110010-5
0
-3-3
0-2--22
--11-1
0000
2111
110010-3
T
1=0130 C
1010101100
1010
10-130-3
101100
1010100
101100
10o1-40-4
1010
111000
10
111000
1100
111000
10
copyright Vincotech
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Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Package Outline and Pinout
Outline
Pinout
copyright Vincotech
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Revision: 1
V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Product Status
Definition
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Target
Formative or In Design
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Preliminary
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
Final
Full Production
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
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Revision: 1
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