1N4383GP/74-E3 [VISHAY]

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode;
1N4383GP/74-E3
型号: 1N4383GP/74-E3
厂家: VISHAY    VISHAY
描述:

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

文件: 总4页 (文件大小:327K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N4383GP thru 1N4385GP  
1N4585GP & 1N4586GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
200 V to 1000 V  
50 A  
5.0 µA  
*
d
e
t
VF  
1.0 V  
n
e
t
a
Tj max.  
175 °C  
P
DO-204AC (DO-15)  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP Unit  
* Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
1.0  
800  
560  
800  
1000  
700  
V
V
V
A
* Maximum RMS voltage  
* Maximum DC blocking voltage  
1000  
* Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA = 100 °C  
IF(AV)  
* Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
50  
A
Maximum full load reverse current, full cycle average IR(AV)  
0.375"(9.5 mm) lead length at TA = 100 °C  
275  
250  
225  
200  
200  
µA  
* Operating junction and storage temperature range TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88507  
14-Oct-05  
www.vishay.com  
1
1N4383GP thru 1N4385GP  
1N4585GP & 1N4586GP  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Maximum  
Test condition  
at 1.0 A  
Symbol 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP Unit  
VF  
1.0  
V
instantaneous  
forward voltage  
Maximum DC reverse  
current at rated DC  
blocking voltage  
T
A = 25 °C  
IR  
5.0  
250  
µA  
TA = 150 °C  
* Typical reverse  
recovery time  
at IF = 0.5 A, IR = 1.0 A,  
trr  
2.0  
15  
µs  
pF  
Irr = 0.25 A  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance(1)  
Notes:  
Symbol 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP Unit  
RθJA 45 °C/W  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.0  
0.8  
0.6  
0.4  
0.2  
0
50  
60 Hz  
Resistive or  
Inductive Load  
TA = 100 °C  
8.3 ms Single Half Sine-Wave  
40  
30  
20  
10  
0
0.375" (9.5mm)  
Lead Length  
25  
50  
75  
100  
125  
150  
175  
200  
1
10  
100  
Number of Cycles at 60 Hz  
Ambient Temperature, °C  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88507  
14-Oct-05  
2
1N4383GP thru 1N4385GP  
1N4585GP & 1N4586GP  
Vishay General Semiconductor  
20  
10  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
Pulse Width = 300 µs  
1% Duty Cycle  
1
10  
TJ = 25 °C  
0.1  
0.01  
0.4  
1
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
Reverse Voltage (V)  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
10  
100  
10  
TJ = 125 °C  
1
0.1  
TJ  
= 75 °C  
1
TJ  
= 25 °C  
40  
0.01  
0.1  
0.01  
0
20  
60  
80  
100  
0.1  
1
10  
100  
t - Pulse Duration (sec.)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-204AC (DO-15)  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
1.0 (25.4)  
min.  
0.300 (7.6)  
0.230 (5.8)  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
1.0 (25.4)  
min.  
Document Number 88507  
14-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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