1N4754A [VISHAY]

Silicon Power Z-Diodes; 广颖电通Z-二极管
1N4754A
型号: 1N4754A
厂家: VISHAY    VISHAY
描述:

Silicon Power Z-Diodes
广颖电通Z-二极管

二极管 测试 PC
文件: 总4页 (文件大小:44K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N4728A...1N4761A  
Vishay Telefunken  
Silicon Power Z–Diodes  
Features  
Very sharp reverse characteristic  
Very high stability  
Low reverse current level  
V –tolerance ± 5%  
Z
Applications  
94 9369  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
50 C  
Type  
Symbol  
Value  
1
Unit  
W
mA  
C
T
amb  
P
V
I
Z
P /V  
V
Z
T
200  
–65...+200  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=9.5mm (3/8”), T =constant  
Symbol  
R
thJA  
Value  
100  
Unit  
K/W  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.2  
V
F
V
F
Document Number 85587  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  
1N4728A...1N4761A  
Vishay Telefunken  
1)  
Type  
V
Znom  
I
ZT  
for  
r
zjT  
r
at  
I
ZK  
I
R
at  
V
R
zjk  
1N4728A  
1N4729A  
1N4730A  
1N4731A  
1N4732A  
1N4733A  
1N4734A  
1N4735A  
1N4736A  
1N4737A  
1N4738A  
1N4739A  
1N4740A  
1N4741A  
1N4742A  
1N4743A  
1N4744A  
1N4745A  
1N4746A  
1N4747A  
1N4748A  
1N4749A  
1N4750A  
1N4751A  
1N4752A  
1N4753A  
1N4754A  
1N4755A  
1N4756A  
1N4757A  
1N4758A  
1N4759A  
1N4760A  
1N4761A  
3.3  
76  
< 10  
< 10  
< 9  
< 9  
< 8  
< 7  
< 5  
< 2  
< 3.5  
< 4.0  
< 4.5  
< 5.0  
< 7  
< 400  
< 400  
< 400  
< 400  
< 500  
< 550  
< 600  
< 700  
< 700  
< 700  
< 700  
< 700  
< 700  
< 700  
< 700  
< 100  
< 700  
< 700  
< 750  
< 750  
< 750  
< 750  
< 750  
< 1000  
< 1000  
< 1000  
< 1000  
< 1500  
< 1500  
< 1500  
< 2000  
< 2000  
< 2000  
< 2000  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
< 100  
< 100  
< 50  
< 10  
< 10  
< 10  
< 10  
< 10  
< 10  
< 10  
< 10  
< 10  
< 10  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
1
1
1
1
1
1
2
3
4
5
6
7
7.6  
8.4  
9.1  
9.9  
11.4  
12.2  
13.7  
15.2  
16.7  
18.2  
20.6  
22.8  
25.1  
27.4  
29.7  
32.7  
35.8  
38.8  
42.6  
47.1  
51.7  
56.0  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
69  
64  
58  
53  
49  
45  
41  
37  
34  
31  
28  
25  
23  
21  
19  
17  
0.5  
0.5  
0.5  
0.25  
0.25  
0.25  
0,25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
< 8  
< 9  
< 10  
< 14  
< 16  
< 20  
< 22  
< 23  
< 25  
< 35  
< 40  
< 45  
< 50  
< 60  
< 70  
< 80  
< 95  
< 110  
< 125  
< 150  
< 175  
15.5  
14  
12.5  
11.5  
10.5  
9.5  
8.5  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.7  
3.3  
1)  
Based on dc–measurement at thermal equilibrium while maintaining the  
lead temperature (T ) at 30 C + 1 C, 9.5mm (3/8”) from the diode body.  
L
www.vishay.de FaxBack +1-408-970-5600  
2 (4)  
Document Number 85587  
Rev. 2, 01-Apr-99  
1N4728A...1N4761A  
Vishay Telefunken  
Dimensions in mm  
Cathode Identification  
94 9368  
0.85 max.  
technical drawings  
according to DIN  
specifications  
2.5 max.  
Standard Glass Case  
54 B 2 DIN 41880  
JEDEC DO 41  
Weight max. 0.3g  
26 min.  
4.1 max.  
26 min.  
Document Number 85587  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
3 (4)  
1N4728A...1N4761A  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.de FaxBack +1-408-970-5600  
4 (4)  
Document Number 85587  
Rev. 2, 01-Apr-99  

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