1N4933/72 [VISHAY]

Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;
1N4933/72
型号: 1N4933/72
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

文件: 总4页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N4933 thru 1N4937  
Vishay General Semiconductor  
Fast Switching Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 600 V  
30 A  
200 ns  
IR  
5.0 µA  
DO-204AL (DO-41)  
VF  
1.2 V  
Tj max.  
150 °C  
Features  
Mechanical Data  
• Fast switching for high efficiency  
• Low forward voltage drop  
• Low leakage current  
Case: DO-204AL, molded epoxy body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer and Telecommunication.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4933 1N4934 1N4935 1N4936 1N4937  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
50  
35  
50  
100  
70  
200  
145  
200  
1.0  
400  
280  
400  
600  
420  
600  
VRMS  
VDC  
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current 0.375" (9.5 mm)  
lead length at TA= 75 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Maximum reverse recovery current (1)  
IRM  
2.0  
A
Operating junction and storage temperature range  
TJ,TSTG  
- 50 to + 150  
°C  
Document Number 88508  
10-Oct-05  
www.vishay.com  
1
1N4933 thru 1N4937  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition  
Symbol 1N4933 1N4934 1N4935 1N4936 1N4937  
Unit  
V
Maximum instantaneous  
forward voltage  
at 1.0 A  
VF  
1.2  
Maximum DC reverse current  
at rated DC blocking voltage  
TA= 25 °C  
TA= 100 °C  
IR  
5.0  
100  
µA  
ns  
pF  
Maximum reverse recovery  
time  
IF = 1.0 A, VR = 30 V,  
trr  
200  
12  
di/dt = 50 A/µs, Irr = 10 % IRM  
Typical junction capacitance  
at 4.0 V, 1 MHz  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4933 1N4934 1N4935 1N4936 1N4937  
Unit  
Typical thermal resistance (1)  
RθJA  
RθJL  
55  
25  
°C/W  
Note:  
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
30  
1.0  
0.8  
0.6  
0.4  
0.2  
0
TA = 75 °C  
8.3 ms Single Half Sine-Wave  
0.375" (9.5mm)  
Lead Length  
1.0 Cycle  
20  
10  
I(pk)  
= π  
I(AV)  
Capacitive Load  
I(pk)  
5.0  
10  
20  
I(AV)  
0
0
25  
50  
75  
100  
125  
150  
175  
1
10  
Number of Cycles at 60 Hz  
100  
Ambient Temperature (°C)  
Figure 1. Forward Current Derating Curves  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88508  
10-Oct-05  
1N4933 thru 1N4937  
Vishay General Semiconductor  
100  
10  
1
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
TJ = 25 °C  
10  
Pulse Width = 300 µs  
1% Duty Cycle  
0.1  
1
0.1  
0.01  
1
10  
100  
1.0  
Instantaneous Forward Voltage (V)  
0.6  
0.8  
1.2  
1.4  
1.6  
1.8  
2.0  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
10  
100  
10  
TJ = 100 °C  
1
1
0.1  
TJ = 25 °C  
0.01  
0.1  
0.01  
0
40  
20  
60  
80  
100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t, Pulse Duration (sec.)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-204AL (DO-41)  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.205 (5.2)  
0.160 (4.1)  
1.0 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
0.026 (0.66)  
0.023 (0.58)  
NOTE: Lead diameter is  
for suffix “E” part numbers  
Document Number 88508  
10-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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