1N5062GP/4E-E3 [VISHAY]

DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode;
1N5062GP/4E-E3
型号: 1N5062GP/4E-E3
厂家: VISHAY    VISHAY
描述:

DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

文件: 总4页 (文件大小:328K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5059GP thru 1N5062GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
200 V to 800 V  
50 A  
5.0 µA  
*
VF  
1.2 V  
d
e
t
n
e
Tj max.  
175 °C  
t
a
P
DO-204AC (DO-15)  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N5059GP 1N5060GP 1N5061GP 1N5062GP  
Unit  
V
* Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
Maximum RMS voltage  
V
V
A
* Maximum DC blocking voltage  
* Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA = 75 °C  
IF(AV)  
1.0  
50  
* Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
* Maximum full load reverse current, full cycle  
average 0.375" (9.5 mm) lead length at  
TA = 25 °C  
TA = 75 °C  
IR(AV)  
5.0  
150  
µA  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88513  
17-Oct-05  
www.vishay.com  
1
1N5059GP thru 1N5062GP  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition  
Symbol 1N5059GP 1N5060GP 1N5061GP 1N5062GP  
Unit  
V
* Max. instantaneous forward  
voltage  
at 1.0 A, TA = 75 °C  
VF  
1.2  
* Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25 °C  
TA = 175 C  
at IF = 0.5 A, IR = 1.0 A,  
IR  
5.0  
300  
µA  
µs  
pF  
Typical reverse recovery time  
trr  
2.0  
15  
Irr = 0.25 A  
Typical junction capacitance  
at 4.0 V, 1 MHz  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N5059GP 1N5060GP 1N5061GP 1N5062GP  
Unit  
Typical thermal resistance(1)  
RθJA  
RθJL  
45  
20  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.0  
0.8  
0.6  
0.4  
0.2  
0
50  
60 Hz  
Resistive or  
Inductive Load  
TA = 100 °C  
8.3 ms Single Half Sine-Wave  
(JEDEC Method)  
40  
30  
20  
10  
0
0.375" (9.5mm)  
Lead Length  
25  
50  
75  
100  
125  
150  
175  
200  
1
10  
100  
Number of Cycles at 60 Hz  
Ambient Temperature, °C  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88513  
17-Oct-05  
1N5059GP thru 1N5062GP  
Vishay General Semiconductor  
20  
10  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
Pulse Width = 300 µs  
1% Duty Cycle  
1
10  
TJ = 25 °C  
0.1  
0.01  
0.4  
1
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
Reverse Voltage (V)  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
10  
100  
10  
TJ = 125 °C  
1
0.1  
TJ = 75 °C  
1
T
J
= 25 °C  
40  
0.01  
0.1  
0.01  
0
20  
60  
80  
100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (sec.)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-204AC (DO-15)  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
1.0 (25.4)  
min.  
0.300 (7.6)  
0.230 (5.8)  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
1.0 (25.4)  
min.  
Document Number 88513  
17-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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