1N5229B [VISHAY]

Small Signal Zener Diodes; 小信号齐纳二极管
1N5229B
型号: 1N5229B
厂家: VISHAY    VISHAY
描述:

Small Signal Zener Diodes
小信号齐纳二极管

二极管 齐纳二极管 测试
文件: 总7页 (文件大小:135K)
中文:  中文翻译
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1N5221B to 1N5267B  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• Standard Zener voltage tolerance is 5 ꢀ  
e2  
• These diodes are also available in Mini-  
MELF case with the type designation  
TZM5221 ... TZM5267, SOT23 case with the type  
designations MMBZ5225 ... MMBZ5267 and  
SOD123 case with the types designations  
MMSZ5225 ... MMSZ5267  
94 9367  
• Lead (Pb)-free component  
• Component in accordance to RoHS  
2002/95/EC and WEEE 2002/96/EC  
Applications  
• Voltage stabilization  
Mechanical Data  
Case: DO35 Glass case  
Weight: approx. 125 mg  
Cathode Band Color: black  
Packaging codes/options:  
TAP/10 k per Ammopack (52 mm tape), 30 k/box  
TR/10 k per 13" reel, 30 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Ptot  
Value  
500  
Unit  
mW  
Power dissipation  
Z-current  
TL 25 °C  
IZ  
Ptot/VZ  
mA  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
Unit  
Thermal resistance junction to ambient air l = 4 mm, TL = constant  
Junction temperature  
300  
175  
K/W  
°C  
Tj  
Storage temperature range  
Tstg  
- 65 to + 175  
°C  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VF  
Min  
Typ.  
Max  
1.1  
Unit  
Forward voltage  
IF = 200 mA  
V
Document Number 85588  
Rev. 1.7, 23-Mar-07  
www.vishay.com  
1
1N5221B to 1N5267B  
Vishay Semiconductors  
Electrical Characteristics  
1N5221B...1N5267B  
Partnumber  
Nominal Zener  
Voltage1)  
Test Current  
Maximum  
Dynamic  
Impedance1)  
Maximum  
Dynamic  
Impedance  
Typical  
Temperatureof  
Coeffizient  
Maximum Reverse Leakage  
Current  
at IZT, VZ  
IZT  
ZZT at IZT  
ZZK at IZK  
0.25 mA  
Ω
=
at IZT  
IR  
VR  
V
mA  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
9.5  
9
Ω
30  
30  
30  
30  
29  
28  
24  
23  
22  
19  
17  
11  
7
α (ꢀ/K)  
- 0.085  
- 0.085  
- 0.080  
- 0.080  
- 0.075  
- 0.070  
- 0.065  
- 0.060  
+ 0.055  
+ 0.030  
+ 0.030  
+ 0.038  
+ 0.038  
+ 0.045  
+ 0.050  
+ 0.058  
+ 0.062  
+ 0.065  
+ 0.068  
+ 0.075  
+ 0.076  
+ 0.077  
+ 0.079  
+ 0.082  
+ 0.082  
+ 0.083  
+ 0.084  
+ 0.085  
+ 0.086  
+ 0.086  
+ 0.087  
+ 0.088  
+ 0.089  
+ 0.090  
+ 0.091  
+ 0.091  
+ 0.092  
+ 0.093  
+ 0.094  
+ 0.095  
+ 0.095  
+ 0.096  
+ 0.096  
+ 0.097  
µA  
100  
100  
75  
75  
50  
25  
15  
10  
5
V
1
1N5221B  
1N5222B  
1N5223B  
1N5224B  
1N5225B  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
1N5236B  
1N5237B  
1N5238B  
1N5239B  
1N5240B  
1N5241B  
1N5242B  
1N5243B  
1N5244B  
1N5245B  
1N5246B  
1N5247B  
1N5248B  
1N5249B  
1N5250B  
1N5251B  
1N5252B  
1N5253B  
1N5254B  
1N5255B  
1N5256B  
1N5257B  
1N5258B  
1N5259B  
1N5260B  
1N5261B  
1N5262B  
1N5263B  
1N5264B  
2.4  
2.5  
2.7  
2.8  
3
1200  
1250  
1300  
1400  
1600  
1600  
1700  
1900  
2000  
1900  
1600  
1600  
1600  
1000  
750  
1
1
1
1
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6
1
1
1
1
5
2
5
2
5
3
5
3.5  
4
6.2  
6.8  
7.5  
8.2  
8.7  
9.1  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
22  
24  
25  
27  
28  
30  
33  
36  
39  
43  
47  
51  
56  
60  
7
5
5
3
5
6
500  
3
6
8
500  
3
6.5  
6.5  
7
8
600  
3
10  
17  
22  
30  
13  
15  
16  
17  
19  
21  
23  
25  
29  
33  
35  
41  
44  
49  
58  
70  
80  
93  
105  
125  
150  
170  
600  
3
600  
3
8
600  
2
8.4  
9.1  
9.9  
10  
11  
12  
13  
14  
14  
15  
17  
18  
19  
21  
21  
23  
25  
27  
30  
33  
36  
39  
43  
46  
600  
1
600  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
600  
8.5  
7.8  
7.4  
7
600  
600  
600  
600  
6.6  
6.2  
5.6  
5.2  
5
600  
600  
600  
600  
600  
4.6  
4.5  
4.2  
3.8  
3.4  
3.2  
3
600  
600  
600  
700  
700  
800  
900  
2.7  
2.5  
2.2  
2.1  
1000  
1100  
1300  
1400  
www.vishay.com  
2
Document Number 85588  
Rev. 1.7, 23-Mar-07  
1N5221B to 1N5267B  
Vishay Semiconductors  
Partnumber  
Nominal Zener  
Voltage1)  
Test Current  
IZT  
Maximum  
Dynamic  
Impedance1)  
Maximum  
Dynamic  
Impedance  
Typical  
Temperatureof  
Coeffizient  
Maximum Reverse Leakage  
Current  
at IZT, VZ  
ZZT at IZT  
ZZK at IZK  
0.25 mA  
Ω
=
at IZT  
IR  
VR  
V
mA  
2
Ω
α (ꢀ/K)  
+ 0.097  
+ 0.097  
+ 0.098  
µA  
0.1  
0.1  
0.1  
V
1N5265B  
1N5266B  
1N5267B  
62  
68  
75  
185  
230  
270  
1400  
47  
52  
56  
1.8  
1600  
1.7  
1700  
1) Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W  
Typical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
500  
400  
300  
1.3  
1.2  
1.1  
VZtn = VZt/VZ (25 °C)  
TKVZ = 10 x 10-4/K  
8 x 10-4/K  
6 x 10-4/K  
4 x 10-4/K  
2 x 10-4/K  
0
l
l
200  
100  
0
1.0  
0.9  
0.8  
- 2 x 10-4/K  
- 4 x 10-4/K  
TL = constant  
20  
240  
0
5
10  
15  
0
- 60  
60  
120  
180  
95 9599  
Tj - Junction Temperature (°C)  
I - Lead Length (mm)  
95 9611  
Figure 1. Thermal Resistance vs. Lead Length  
Figure 3. Typical Change of Working Voltage vs.  
Junction Temperature  
1000  
600  
500  
Tj = 25 °C  
100  
400  
300  
200  
IZ = 5 mA  
10  
100  
0
1
200  
80  
Tamb - Ambient Temperature (°C)  
120  
160  
25  
0
40  
0
10  
15  
20  
5
95 9598  
95 9602  
VZ - Z-Voltage (V)  
Figure 2. Typical Change of Working Voltage under Operating  
Conditions at Tamb = 25 °C  
Figure 4. Total Power Dissipation vs. Ambient Temperature  
Document Number 85588  
Rev. 1.7, 23-Mar-07  
www.vishay.com  
3
1N5221B to 1N5267B  
Vishay Semiconductors  
15  
10  
100  
80  
Ptot = 500 mW  
Tamb = 25 °C  
60  
5
40  
20  
0
IZ = 5 mA  
0
- 5  
50  
12  
20  
10  
20  
VZ - Z-Voltage (V)  
0
30  
40  
0
4
6
8
VZ - Z-Voltage (V)  
95 9600  
95 9604  
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage  
Figure 8. Z-Current vs. Z-Voltage  
50  
200  
Ptot = 500 mW  
Tamb = 25 °C  
40  
150  
VR = 2 V  
30  
Tj = 25 °C  
100  
20  
10  
0
50  
0
25  
35  
0
10  
15  
20  
5
15  
20  
25  
30  
95 9607  
VZ - Z-Voltage (V)  
95 9601  
VZ - Z-Voltage (V)  
Figure 6. Diode Capacitance vs. Z-Voltage  
Figure 9. Z-Current vs. Z-Voltage  
1000  
100  
10  
IZ = 1 mA  
100  
10  
Tj = 25 °C  
1
5 mA  
0.1  
0.01  
10 mA  
Tj = 25 °C  
15 20  
1
0.001  
25  
1.0  
0
5
10  
0
0.2  
0.4  
0.6  
0.8  
95 9606  
95 9605  
VF - Forward Voltage (V)  
VZ - Z-Voltage (V)  
Figure 7. Forward Current vs. Forward Voltage  
Figure 10. Differential Z-Resistance vs. Z-Voltage  
www.vishay.com  
Document Number 85588  
Rev. 1.7, 23-Mar-07  
4
1N5221B to 1N5267B  
Vishay Semiconductors  
1000  
100  
10  
tP/T = 0.5  
tP/T = 0.2  
Single Pulse  
RthJA = 300 K/W  
T = Tjmax - Tamb  
tP/T = 0.01  
tP/T = 0.1  
tP/T = 0.02  
tP/T = 0.05  
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp 1/2)/(2rzj)  
)
1
10-1  
100  
101  
102  
95 9603  
tP - Pulse Length (ms)  
Figure 11. Thermal Response  
Package Dimensions in millimeters (inches): DO35  
Cathode Identification  
26 min. (1.024)  
3.9 max. (0.154)  
26 min. (1.024)  
Rev. 6 - Date: 29. January 2007  
Document no.: 6.560-5004.02-4  
94 9366  
Document Number 85588  
Rev. 1.7, 23-Mar-07  
www.vishay.com  
5
1N5221B to 1N5267B  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or  
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,  
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated  
with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
6
Document Number 85588  
Rev. 1.7, 23-Mar-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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