1N5408-E3/54 [VISHAY]

DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode;


型号：	1N5408-E3/54
厂家：	VISHAY
描述：	DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode PC 二极管
文件：	总4页 (文件大小：82K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407, 1N5408

www.vishay.com

Vishay General Semiconductor

General Purpose Plastic Rectifier

FEATURES

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

DO-201AD

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application.

PRIMARY CHARACTERISTICS

Note

I_F(AV)

3.0 A

•

These devices are not AEC-Q101 qualified.

50 V, 100 V, 200 V, 300 V, 500 V,

600 V, 800 V, 1000 V

V_RRM

I_FSM

I_R

200 A

5.0 μA

MECHANICAL DATA

Case: DO-201AD, molded epoxy body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_F

1.2 V

T_Jmax.

Package

Diode variations

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

DO-201AD

Single die

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNIT

Maximum repetitive peak

reverse voltage

V_RRM

100

200

300

400

500

600

800

1000

Maximum RMS voltage

V_RMS

V_DC

140

200

210

300

280

400

350

500

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward

rectified current 0.5" (12.5 mm)

lead length at T_L= 105 °C

I_F(AV)

3.0

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

I_FSM

200

Maximum full load reverse

current, full cycle average

0.5" (12.5 mm) lead length

at T_L= 105 °C

I_R(AV)

500

μA

°C

Operating junction and

storage temperature range

T_J, T_STG

- 50 to + 150

Revision: 01-Aug-13

Document Number: 88516

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407, 1N5408

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

TEST

CONDITIONS

PARAMETER

SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNIT

Maximum

instantaneous

forward voltage

3.0 A

V_F

1.2

Maximum DC

reverse current

at rated DC

T_A= 25 °C

5.0

500

I_R

μA

T_A= 150 °C

4.0 V, 1 MHz

blocking voltage

Typical junction

capacitance

C_J

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNIT

(1)

Typical thermal resistance

R_JA

°C/W

Note

(1)

Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted with 0.8" x 0.8" (20 mm x 20 mm) copper heatsinks

ORDERING INFORMATION (Example)

PREFERRED P/N

1N5404-E3/54

1N5404-E3/73

UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY

DELIVERY MODE

13" diameter paper tape and reel

Ammo pack packaging

1.1

1400

1000

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

1000

100

T_L= Lead Temp.

with Both Leads Heat

Sink Mounted with

Length (L) as shown

T_L= 105 °C

8.3 ms Single Half Sine-Wave

1.0 Cycle

60 Hz Resistive

or Inductive Load

T_A= Ambient Temperature

0.375" (9.5 mm) Lead Length

P.C.B. Mounted

100

120

140

160

180

Number of Cycles at 60 Hz

Lead Temperature (°C)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Revision: 01-Aug-13

Document Number: 88516

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407, 1N5408

www.vishay.com

Vishay General Semiconductor

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_J= 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

0.1

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 5 - Typical Junction Capacitance

100

T_J= 150 °C

T_J= 100 °C

0.1

T_J= 25 °C

0.01

0.1

0.01

100

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-201AD

1.0 (25.4)

MIN.

0.210 (5.3)

0.190 (4.8)

DIA.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

0.052 (1.32)

0.048 (1.22)

DIA.

Revision: 01-Aug-13

Document Number: 88516

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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

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Revision: 08-Feb-17

Document Number: 91000

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