1N5623GP/51 [VISHAY]

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;
1N5623GP/51
型号: 1N5623GP/51
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

文件: 总4页 (文件大小:324K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5615GP thru 1N5623GP  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
200 V to 1000 V  
50 A  
150 ns, 250 ns, 300 ns, 500 ns  
IR  
0.5 µA  
1.2 V  
*
d
e
t
VF  
n
e
t
a
Tj max.  
175 °C  
P
DO-204AC (DO-15)  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP  
Units  
V
Maximum repetitive peak reverse voltage  
VRRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
1.0  
800  
560  
800  
1000  
700  
Maximum RMS voltage  
V
V
A
A
Maximum DC blocking voltage  
VDC  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
IFSM  
50  
A
Operating junction and storage  
temperature range  
TJ,TSTG  
- 65 to + 175  
°C  
Document Number 88522  
19-Sep-05  
www.vishay.com  
1
1N5615GP thru 1N5623GP  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Maximum  
Test condition  
Symbols 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP Units  
at 1.0 A  
VF  
1.2  
V
instantaneous  
forward voltage  
Maximum DC  
reverse current at  
rated DC blocking  
voltage  
TA= 25 °C  
TA= 100 °C  
IR  
0.5  
25  
µA  
Maximum reverse  
recovery time  
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
trr  
150  
250  
25  
300  
500  
ns  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
pF  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Notes:  
Symbols 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP Units  
RθJA 45 °C/W  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
60  
50  
40  
30  
20  
10  
0
1.0  
0.75  
0.5  
Resistive or  
Inductive Load  
TA = 55 °C  
8.3 ms Single Half Sine-Wave  
0.25  
0
0.375" (9.5mm) Lead Length  
175  
1
10  
100  
25  
50  
75  
100  
125  
150  
Number of Cycles at 60 Hz  
Ambient Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88522  
19-Sep-05  
1N5615GP thru 1N5623GP  
Vishay General Semiconductor  
10  
1
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
10  
TJ = 25 °C  
Pulse Width = 300 µs  
1% Duty Cycle  
0.1  
0.01  
1
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
20  
10  
100  
10  
TJ = 125 °C  
1
TJ = 75 °C  
1
0.1  
TJ = 25 °C  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
0
20  
40  
60  
80  
100  
t, Pulse Duration (sec.)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-204AC (DO-15)  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
1.0 (25.4)  
min.  
0.300 (7.6)  
0.230 (5.8)  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
1.0 (25.4)  
min.  
Document Number 88522  
19-Sep-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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