1N5819/51
更新时间：2024-09-18 14:08:56
品牌：VISHAY
描述：Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
概述
规格参数
数据手册1N5819/51 概述
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 整流二极管
1N5819/51 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 零件包装代码： | DO-41 | 包装说明： | O-PALF-W2 |
| 针数： | 2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| 风险等级： | 5.65 | Is Samacsys： | N |
| 其他特性： | FREE WHEELING DIODE | 外壳连接： | ISOLATED |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | JEDEC-95代码： | DO-204AL |
| JESD-30 代码： | O-PALF-W2 | JESD-609代码： | e0 |
| 元件数量： | 1 | 端子数量： | 2 |
| 最大输出电流： | 1 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | ROUND | 封装形式： | LONG FORM |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 40 V | 表面贴装： | NO |
| 技术： | SCHOTTKY | 端子面层： | TIN LEAD |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | Base Number Matches： | 1 |
1N5819/51 数据手册
通过下载1N5819/51数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载1N5817 thru 1N5819
Vishay General Semiconductor
Schottky Barrier Rectifiers
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• Solder dip 260 °C, 40 s
DO-204AL (DO-41)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
IFSM
20 V, 30 V, 40 V
25 A
MECHANICAL DATA
Case: DO-204AL (DO-41)
VF
0.45 V, 0.55 V, 0.60 V
125 °C
Epoxy meets UL 94V-0 flammability rating
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VRRM
VRMS
1N5817
20
1N5818
30
1N5819
40
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
V
14
21
28
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
VDC
20
30
40
VRSM
24
36
48
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 90 °C
IF(AV)
1.0
25
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Storage temperature range
dV/dt
10 000
V/µs
°C
TJ, TSTG
- 65 to + 125
Document Number: 88525
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
43
1N5817 thru 1N5819
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
1N5817
1N5818
0.550
1N5819
0.600
UNIT
V
Maximum instantaneous forward voltage (1) 1.0
Maximum instantaneous forward voltage (1) 3.1
VF
VF
0.450
0.750
0.875
0.900
V
Maximum average reverse current at rated
DC blocking voltage (1)
TA = 25 °C
TA = 100 °C
1.0
10
IR
mA
pF
Typical junction capacitance
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
4.0 V, 1.0 MHz
CJ
125
110
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
1N5817
1N5818
1N5819
UNIT
RθJA
RθJL
50
15
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5 x 1.5" (38 x 38 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
1N5819-E3/54
1N5819-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
0.332
54
73
5500
3000
0.332
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
1.0
30
25
20
15
10
5
0.75
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0.5
0.25
0
0
0
80
100
120
20
40
60
140
1
10
Number of Cycles at 60 Hz
100
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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44
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88525
Revision: 20-Aug-07
1N5817 thru 1N5819
Vishay General Semiconductor
100
10
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 125 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
T
J = 25 °C
0.1
1N5818 & 1N5819
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Junction Capacitance
100
10
100
10
TJ = 125 °C
1
0.1
TJ = 75 °C
1
0.01
TJ = 25 °C
0.001
0.1
0
20
40
60
80
100
100
0.1
1
10
0.01
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 7. Typical Transient Thermal Impedance
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1N5817
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Document Number: 88525
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
45
1N5817 thru 1N5819
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
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46
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88525
Revision: 20-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
1N5819/51 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N5819/54 | VISHAY | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N5819/58 | VISHAY | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
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| 1N5819/62 | VISHAY | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N5819/64 | VISHAY | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N5819/71 | VISHAY | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N5819/73 | VISHAY | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N5819/90 | VISHAY | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N5819/92 | VISHAY | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| 1N5819143 | NXP | DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, Signal Diode | 获取价格 |
|
| 1N5819A-G | COMCHIP | Schottky Barrier Rectifiers | 获取价格 |
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