1N5821/4-E3 [VISHAY]
DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode;
| 型号： | 1N5821/4-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5820 thru 1N5822
Vishay Semiconductors
formerly General Semiconductor
Schottky Barrier Rectifier
Reverse Voltage 20 to 40V
Forward Current 3.0A
DO-201AD
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
Min.
• Low power loss, high efficiency
• For use in low voltage high frequency inverters,
free wheeling, and polarity protection applications
0.210 (5.3)
0.190 (4.8)
Dia.
• Guardring for overvoltage protection
Mechanical Data
0.375 (9.5)
0.285 (7.2)
Case: JEDEC DO-201 AD molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds 0.375” (9.5mm) lead length,
5lbs. (2.3kg) tension
Polarity: Color band denotes cathode end
Mounting Position: Any
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Weight: 0.04 oz., 1.12 g
Packaging codes/options:
1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13” reel, 5.6K per box
23/1K per ammo mag., 9K per box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbols
VRRM
VRMS
VDC
1N5820
1N5821
1N5822
40
Units
* Maximum repetitive peak reverse voltage
Maximum RMS voltage
20
30
V
V
V
V
14
21
28
* Maximum DC blocking voltage
* Non-repetitive peak reverse voltage
20
30
40
VRSM
24
36
48
* Maximum average forward rectified current
0.375" (9.5mm) lead length at TL=95°C
IF(AV)
3.0
A
* Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method) at TL=75°C
IFSM
80
A
RθJA
RθJL
40
10
Typical thermal resistance (2)
*Storage temperature range
°C/W
°C
TJ, TSTG
-65 to +125
Electrical Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbols
1N5820
0.475
1N5821
0.500
1N5822
0.525
Units
V
* Maximum instantaneous forward voltage at 3.0 (1)
* Maximum instantaneous forward voltage at 9.4 (1)
* Maximum average reverse current at rated TA=25°C
VF
VF
0.850
0.900
0.950
V
2.0
20
mA
DC blocking voltage (1)
TA=100°C
IR
*JEDEC registered values
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500"
(12.7mm) lead length with 2.5 x 2.5” (63.5 x 63.5mm) copper pad
Document Number 88526
1-Jul-02
www.vishay.com
1
1N5820 thru 1N5822
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 - Maximum Non-repetitive Peak
Forward Surge Current
Fig. 1 - Forward Current
Derating Curve
80
70
60
4.0
Resistive or Inductive Load
0.375" (9.5mm) lead length
T = T max.
J
J
8.3ms single half sine-wave
(JEDEC Method)
3.0
2.0
1.0
0
50
40
30
20
10
1
0
0
10
100
0
20
40
60
80
100
120
140
Lead Temperature (¡C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneous Forward
Characteristics
Fig. 4 - Typical Reverse
Characteristics
10
1
50
10
T = 125°C
J
T = 125°C
J
Pulse Width = 300µs
1% Duty Cycle
T = 75°C
J
1
0.1
T = 25°C
J
0.1
T = 25°C
J
0.01
0.001
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction
Capacitance
Fig. 6 - Typical Transient
Thermal Impedance
100
10
1,000
T = 25°C
J
f=1.0 MH
Z
V
sig
=50mVp-p
100
1
10
0.1
0.1
1
10
100
0.1
1.0
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88526
1-Jul-02
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