25RIA10MPBF [VISHAY]

Silicon Controlled Rectifier, 40A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA, TO-48, 2 PIN;


型号：	25RIA10MPBF
厂家：	VISHAY
描述：	Silicon Controlled Rectifier, 40A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA, TO-48, 2 PIN 栅极触发装置可控硅整流器
文件：	总8页 (文件大小：155K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

25RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 25 A

FEATURES

• Improved glass passivation for high reliability

and exceptional stability at high temperature

• High dI/dt and dV/dt capabilities

• Standard package

RoHS

COMPLIANT

• Low thermal resistance

• Metric threads version available

• Types up to 1200 V V_DRM/V_RRM

• RoHS compliant

TO-208AA (TO-48)

• Designed and qualified for industrial and consumer level

TYPICAL APPLICATIONS

• Medium power switching

PRODUCT SUMMARY

I_T(AV)

25 A

• Phase control applications

• Can be supplied to meet stringent military, aerospace and

other high reliability requirements

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

°C

I_T(AV)

T_C

I_T(RMS)

50 Hz

60 Hz

50 Hz

60 Hz

420

I_TSM

440

867

I²t

A²s

790

_DRM/V_RRM

100 to 1200

110

t_q

Typical

µs

°C

T_J

- 65 to 125

Document Number: 93701

Revision: 19-Sep-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

25RIA Series

Medium Power Thyristors

(Stud Version), 25 A

Vishay High Power Products

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

_DRM/V_RRM, MAXIMUM REPETITIVE PEAK

_RSM, MAXIMUM NON-REPETITIVE

I_DRM/I_RRMMAXIMUM

AT T_J= T_JMAXIMUM

TYPE

NUMBER

VOLTAGE

CODE

AND OFF-STATE VOLTAGE ⁽¹⁾

PEAK VOLTAGE ⁽²⁾

100

200

150

300

400

500

25RIA

600

700

800

900

100

120

1000

1200

1100

1300

Notes

(1)

Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs

For voltage pulses with t_p≤ 5 ms

(2)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

180° sinusoidal conduction

VALUES

UNITS

°C

Maximum average on-state current

at case temperature

I_T(AV)

Maximum RMS on-state current

I_T(RMS)

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

420

440

350

370

867

790

615

560

No voltage

reapplied

Maximum peak, one-cycle

non-repetitive surge current

I_TSM

100 % V_RRM

reapplied

Sinusoidal

half wave,

initial T_J=

T_Jmaximum

No voltage

reapplied

Maximum I²t for fusing

I²t

A²s

100 % V_RRM

reapplied

t = 0.1 to 10 ms, no voltage reapplied,

T_J= T_Jmaximum

Maximum I²√t for fusing

I²√t

8670

A²√s

(16.7 % x π x I_T(AV)< I < π x I_T(AV)),

T_J= T_Jmaximum

Low level value of threshold voltage

High level value of threshold voltage

V_T(TO)1

V_T(TO)2

r_t1

0.99

1.40

10.1

(I > π x I_T(AV)), T_J= T_Jmaximum

Low level value of

on-state slope resistance

(16.7 % x π x I_T(AV)< I < π x I_T(AV)),

T_J= T_Jmaximum

mΩ

High level value of

on-state slope resistance

r_t2

(I > π x I_T(AV)), T_J= T_Jmaximum

5.7

Maximum on-state voltage

Maximum holding current

Latching current

V_TM

I_H

I_pk= 79 A, T_J= 25 °C

1.70

130

200

T_J= 25 °C, anode supply 6 V, resistive load

I_L

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For technical questions, contact: ind-modules@vishay.com

Document Number: 93701

Revision: 19-Sep-08

25RIA Series

Medium Power Thyristors

(Stud Version), 25 A

Vishay High Power Products

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

200

UNITS

V_DRM≤ 600 V

V_DRM≤ 800 V

V_DRM≤ 1000 V

V_DRM≤ 1600 V

T_J= T_Jmaximum, V_DM= Rated V_DRM

Gate pulse = 20 V, 15 Ω, t_p= 6 µs, t_r= 0.1 µs maximum

I_TM= (2 x rated dI/dt) A

180

Maximum rate of rise

of turned-on current

dI/dt

A/µs

160

150

T_J= 25 °C,

at rated V_DRM/V_RRM, T_J= 125 °C

Typical turn-on time

t_gt

t_rr

0.9

T_J= T_Jmaximum,

Typical reverse recovery time

Typical turn-off time

_TM= I_T(AV), t_p> 200 µs, dI/dt = - 10 A/µs

µs

T_J= T_Jmaximum, I_TM= I_T(AV), t_p> 200 µs, V_R= 100 V,

dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V_DRM

gate bias 0 V to 100 W

t_q

110

Note

• t_q= 10 µs up to 600 V, t_q= 30 µs up to 1600 V available on special request

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

100

UNITS

T_J= T_Jmaximum linear to 100 % rated V_DRM

T_J= T_Jmaximum linear to 67 % rated V_DRM

Maximum critical rate of rise

of off-state voltage

dV/dt

V/µs

300 ⁽¹⁾

Note

(1)

Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 25RIA120S90

TRIGGERING

PARAMETER

SYMBOL

P_GM

TEST CONDITIONS

VALUES

8.0

UNITS

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak negative gate voltage

T_J= T_Jmaximum

P_G(AV)

I_GM

2.0

T_J= T_Jmaximum

T_J= - 65 °C

1.5

-V_GM

Maximum required gate trigger

current/voltage are the lowest

value which will trigger all units

6 V anode to cathode applied

DC gate current required to trigger

I_GT

T_J= 25 °C

T_J= 125 °C

T_J= - 65 °C

T_J= 25 °C

T_J= 125 °C

3.0

2.0

1.0

2.0

DC gate voltage required to trigger

DC gate current not to trigger

V_GT

I_GD

T_J= T_Jmaximum, V_DRM= Rated value

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

unit with rated V_DRManode to

cathode applied

T_J= T_Jmaximum,

_DRM= Rated value

DC gate voltage not to trigger

V_GD

0.2

Document Number: 93701

Revision: 19-Sep-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

25RIA Series

Medium Power Thyristors

(Stud Version), 25 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction

and storage temperature range

T_J, T_Stg

- 65 to 125

°C

Maximum thermal resistance,

junction to case

R_thJC

DC operation

0.75

0.35

K/W

Maximum thermal resistance,

case to heatsink

R_thCS

Mounting surface, smooth, flat and greased

Non-lubricated threads

3.4 ^{+ 0 - 10 %}

(30)

N · m

(lbf ⋅ in)

Allowable mounting torque

23 ^{+ 0 - 10 %}

(20)

Lubricated threads

Approximate weight

Case style

0.49

oz.

See dimensions - link at the end of datasheet

TO-208AA (TO-48)

ΔR_thJCCONDUCTION

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDITIONS

UNITS

180°

120°

90°

0.17

0.21

0.27

0.40

0.69

0.13

0.22

0.30

0.42

0.70

T_J= T_Jmaximum

K/W

60°

30°

Note

• The table above shows the increment of thermal resistance R_thJCwhen devices operate at different conduction angles than DC

130

120

110

100

130

120

110

100

25RIA Series

(DC) = 0.75 K/W

25RIA Series

thJC

(DC) =0.75 K/W

thJC

Conduction Period

Conduction Angle

30°

60°

90°

120°

180°

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

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For technical questions, contact: ind-modules@vishay.com

Document Number: 93701

Revision: 19-Sep-08

25RIA Series

Medium Power Thyristors

(Stud Version), 25 A

Vishay High Power Products

180°

120°

90°

60°

30°

RMS Limit

Conduction Angle

25RIA Series

T = 125°C

300

100

125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

25RIA Series

T = 125°C

10 15 20 25 30 35 400

100

125

Maximum Allowable Ambient Temperature (°C)

Average On-state Current (A)

Fig. 4 - On-State Power Loss Characteristics

450

425

400

375

350

325

300

275

250

225

200

175

150

375

350

325

300

275

250

225

200

175

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

At Any Rated Load ConditionAnd With

Rated V

Applied Following Surge.

RRM

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

No Voltage Reapplied

Rated V

Reapplied

RRM

25RIA Series

0.01

0.1

Pulse Train Duration (s)

100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 5 - Maximum Non-Repetitive Surge Current

Document Number: 93701

Revision: 19-Sep-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

25RIA Series

Medium Power Thyristors

(Stud Version), 25 A

Vishay High Power Products

1000

25RIA Series

100

T = 25°C

T = 125°C

0.5

1.5

2.5

Instantaneous On-state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

Steady State Value

= 0.75 K/W

thJC

(DC Operation)

0.1

25RIA Series

0.01

0.001

0.01

0.1

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z_thJCCharacteristics

100

Rectangular gate pulse

(1) PGM = 16W, tp = 4ms

(2) PGM = 30W, tp = 2ms

(3) PGM = 60W, tp = 1ms

(4) PGM = 60W, tp = 1ms

a) Recommended load line for

rated di/dt : 10V, 20ohms

tr <=0.5 µs, tp >= 6 µs

b) Recommended load line for

<=30%rated di/dt : 10V, 65ohms

tr<=1 µs, tp >= 6 µs

(a)

(b)

(4)

(3)

(2)

(1)

VGD

IGD

25RIA Series Frequency Limited by PG(AV)

0.1

0.001

0.01

0.1

100

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

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For technical questions, contact: ind-modules@vishay.com

Document Number: 93701

Revision: 19-Sep-08

25RIA Series

Medium Power Thyristors

(Stud Version), 25 A

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

RIA 120

S90

Current code

Essential part number

Voltage code x 10 = V_RRM(see Voltage Ratings table)

None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A

M = Stud base TO-208AA (TO-48) M6 x 1

Critical dV/dt:

None = 300 V/µs (standard value)

S90 = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions

http://www.vishay.com/doc?95333

Document Number: 93701

Revision: 19-Sep-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

25RIA10MPBF [VISHAY]

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