4GBU02LS [VISHAY]

DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, GBU, 4 PIN, Bridge Rectifier Diode;


型号：	4GBU02LS
厂家：	VISHAY
描述：	DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, GBU, 4 PIN, Bridge Rectifier Diode
文件：	总5页 (文件大小：83K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Bulletin I2789 rev. B 03/03

4GBU..LS Series

4.0 Amps Single Phase Full Wave

Bridge Rectifier

Features

Diode chips are glass passivated

Suitable for Universal hole mounting

Easy to assemble & install on P.C.B.

Surge Current Capability - 90A_PK

I_O(AV)= 4A

High Isolation between terminals and molded case (1500V_RMS

)

V_RRM= 200/ 600V

Lead free terminals solderable as per MIL-STD-750, Method 2026

Terminals suitable for High Temperature soldering guaranteed at

260°C/ 8-10secs

UL E160375 approved

Description

These 4GBU.. Series of Single Phase Bridges

consist of four glass passivated silicon junction

connected as a Full Wave Bridge. These four

junctions are encapsulated by plastic molding

technique. These Bridges are mainly used in

Switch Mode power supply and in industrial and

consumer equipment.

Major Ratings and Characteristics

Parameters

4GBU..LS

Units

I_O

@ T_C

100

°C

I_FSM

@50Hz

@60Hz

@50Hz

@60Hz

A²s

I²t

GBU

V_RRMrange

T_J

200 to 600

- 55 to150

^oC

www.irf.com

4GBU..LS Series

Bulletin I2789 rev. B 03/03

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V_RRM, max repetitive

V_RMS, max

RMS voltage

T_J= T_Jmax.

V_RSM, max non-repetitive

peak rev. voltage

T_J= T_Jmax.

I_RRMmax.

@ rated V_RRM@ rated V_RRM

T_J= 25°C

µA

I_RRMmax.

Type number

Code

peak rev. voltage

T_J= T_Jmax.

T_J= 150°C

µA

4GBU..LS

4GBU..LSF

200

400

600

140

280

420

300

500

700

250

Forward Conduction

Parameters

4GBU..LS

Unit

Conditions

I_O

Maximum DC output current

T_C= 100°C, Resistive & inductive load

T_C= 100°C, Capacitive load

3.2

I_FSM

Maximum peak, one-cycle

t =10ms, 20ms

non-repetitive surge current,

following any rated load condition

and with rated V_RRMreapplied

t = 8.3ms, 16.7ms T_J= 150°C

I²t

Maximum I²t for fusing,

initial T_J= T_Jmax

A²s

t =10ms

t =8.3ms

V_FM

I_RM

Maximum peak forward voltage

per diode

0.975

µA

T_J=25^oC,I_FM=2A

Typical peak reverse leakage

current per diode

T_J=25^oC, 100%V_RRM

V_RRMMaximum repetitive peak

reverse voltage range

200 to600

Thermal and Mechanical Specifications

Parameters

4GBU..LS

Unit

Conditions

T_J

Operating and storage

temperature range

-55 to150

^oC

T_stg

R_thJCMax. thermal resistance

junction tocase

5.0

°C/ W

g(oz)

DC rated current through bridge (1)

R_thJA

Thermal resistance,

junction to ambient

Approximate weight

4 (0.14)

Mounting Torque

1.0

9.0

Bridge to Heatsink

Lb.in

Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum heat

transfer and bolt down using 3mm screw

www.irf.com

4GBU..LS Series

Bulletin I2789 rev. B 03/03

100

150

140

130

120

110

100

180˚

(Rect)

T = 25˚C

T = 150˚C

180˚

(Sine)

0.1

0.5

1.5

2.5

Average Forward Current (A)

Instantaneous Forward Voltage (V)

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Forward Voltage Drop Characteristics

100

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

180˚

(Sine)

180˚

Initial Tj = 150˚C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

(Rect)

T = 150˚C

100

Average Forward Current (A)

Number of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 3 - Total Power Loss Characteristics

Fig. 4 - Maximum Non-Repetitive Surge Current

www.irf.com

4GBU..LS Series

Bulletin I2789 rev. B 03/03

Ordering Information Table

Device Code

GBU

Bridge current

Basic Part Number

Voltage Code: code x 100 = V_RRM

Low surge

Lead Forming:7.5 mm

Outline Table

4GBU..LS

www.irf.com

4GBU..LS Series

Bulletin I2789 rev. B 03/03

Outline Table

4GBU..LSF

Add suffix "F" for 7.5 mm equal space lead forming

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial and Consumer Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 03/03

www.irf.com

相关型号：