50RIA10MS90 [VISHAY]
Silicon Controlled Rectifier, 80A I(T)RMS, 50000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN;
| 型号： | 50RIA10MS90 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 80A I(T)RMS, 50000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN 栅 栅极 |
| 文件： | 总8页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
50RIA Series
Vishay Semiconductors
Medium Power Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
RoHS
• Excellent dynamic characteristics
COMPLIANT
• dV/dt = 1000 V/µs option
• Superior surge capabilities
• Standard package
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• RoHS compliant
TO-208AC (TO-65)
TYPICAL APPLICATIONS
• Phase control applications in converters
• Lighting circuits
PRODUCT SUMMARY
IT(AV)
50 A
• Battery charges
• Regulated power supplies and temperature and speed
control circuit
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
50
UNITS
A
°C
A
IT(AV)
TC
94
IT(RMS)
80
50 Hz
60 Hz
50 Hz
60 Hz
1430
ITSM
A
1490
10.18
9.30
I2t
kA2s
V
DRM/VRRM
100 to 1200
110
V
tq
Typical
µs
°C
TJ
- 40 to 125
Document Number: 93711
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
50RIA Series
Medium Power Thyristors
(Stud Version), 50 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE (1)
V
VRSM, MAXIMUM NON-REPETITIVE
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK VOLTAGE (2)
V
10
20
100
200
150
300
40
400
500
50RIA
15
60
600
700
80
800
900
100
120
1000
1200
1100
1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
For voltage pulses with tp 5 ms
(2)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° sinusoidal conduction
VALUES
UNITS
50
94
A
°C
A
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
80
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1430
1490
1200
1255
10.18
9.30
7.20
6.56
No voltage
reapplied
Maximum peak, one-cycle
non-repetitive surge current
ITSM
A
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
kA2s
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
Maximum I2t for fusing
I2t
101.8
kA2s
Low level value of threshold voltage
High level value of threshold voltage
VT(TO)1
VT(TO)2
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum
0.94
1.08
V
Low level value of on-state
slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
4.08
m
High level value of on-state
slope resistance
rt2
VTM
IH
( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum
3.34
1.60
200
400
Maximum on-state voltage
Maximum holding current
Latching current
Ipk = 157 A, TJ = 25 °C
V
TJ = 25 °C, anode supply 22 V, resistive load,
initial IT = 2 A
mA
IL
Anode supply 6 V, resistive load
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93711
Revision: 19-Sep-08
50RIA Series
Medium Power Thyristors
(Stud Version), 50 A
Vishay Semiconductors
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 125 °C, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 µs, tr = 0.1 µs maximum
TM = (2 x rated dI/dt) A
VALUES UNITS
,
VDRM 600 V
VDRM 1600 V
200
Maximum rate of
rise of turned-on current
dI/dt
A/µs
µs
100
0.9
I
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit
Gate pulse = 10 V, 15 source, tp = 20 µs
Typical delay time
Typical turn-off time
td
tq
TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs
dIr/dt = - 10 A/µs, VR = 50 V
110
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = TJ maximum linear to 100 % rated VDRM
TJ = TJ maximum linear to 67 % rated VDRM
VALUES UNITS
200
V/µs
Maximum critical rate of rise of
off-state voltage
dV/dt
500 (1)
Note
(1)
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
VALUES
10
UNITS
Maximum peak gate power
W
A
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
PG(AV)
IGM
2.5
2.5
+VGM
-VGM
20
V
10
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
250
100
50
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
DC gate current required to trigger
IGT
mA
3.5
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VGT
V
mA
V
TJ = 25 °C
2.5
TJ = TJ maximum,
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
IGD
5.0
0.2
V
DRM = Rated voltage
VGD
TJ = TJ maximum
Document Number: 93711
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
50RIA Series
Medium Power Thyristors
(Stud Version), 50 A
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction and
storage temperature range
TJ, TStg
- 40 to 125
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.35
0.25
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Non-lubricated threads
3.4 + 0 - 10 %
(30)
N · m
(lbf · in)
Allowable mounting torque
2.3 + 0 - 10 %
(20)
Lubricated threads
28
g
Approximate weight
Case style
1.0
oz.
See dimensions - link at the end of datasheet
TO-208AC (TO-65)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.078
0.094
0.120
0.176
0.294
0.057
0.098
0.130
0.183
0.296
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
130
120
110
100
90
130
120
110
100
90
50RIA Series
(DC) = 0.35 K/W
50RIA Series
(DC) = 0.35 K/W
R
R
thJC
thJC
Conduction Angle
Conduction Period
30°
60°
90°
30
120°
180°
90°
60°
120°
30°
180°
DC
80
0
10
20
40
50
60
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93711
Revision: 19-Sep-08
50RIA Series
Medium Power Thyristors
(Stud Version), 50 A
Vishay Semiconductors
80
70
60
50
40
30
20
10
0
1300
At Any Rated Load Condition And With
180°
120°
90°
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
1200
1100
1000
900
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
60°
30°
RMS Limit
Conduction Angle
50RIA Series
800
T = 125°C
J
700
50RIA Series
600
0
10
20
30
40
50
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
100
DC
1500
Maximum Non Repetitive Surge Current
90
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1400
1300
1200
1100
1000
900
180°
120°
90°
80
Initial T = 125°C
J
No Voltage Reapplied
70
60
50
40
30
20
10
0
60°
30°
Rated V
Reapplied
RRM
RMS Limit
Conduction Period
50RIA Series
800
700
T = 125°C
J
50RIA Series
600
500
0.01
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-State Power Loss Characteristics
1000
100
10
1
T = 25°C
J
T = 125°C
J
50RIA Series
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Document Number: 93711
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
50RIA Series
Medium Power Thyristors
(Stud Version), 50 A
Vishay Semiconductors
1
Steady State Value
= 0.35 K/W
R
thJ-hs
0.1
50RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30%rated di/dt : 20V, 65 ohms
tr<=1 µs
(b)
(a)
(1) (2) (3) (4)
VGD
IGD
0.01
50RIA Series Frequency Limited by PG(AV)
10 100
0.1
0.001
0.1
1
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
50
RIA 120 S90
M
1
2
3
4
5
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M = Stud base TO-208AC (TO-65) M6 x 1
5
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95334
Dimensions
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6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93711
Revision: 19-Sep-08
Outline Dimensions
Vishay Semiconductors
TO-208AC (TO-65)
DIMENSIONS in millimeters (inches)
5.1/7.6
(0.2/0.3)
Ø 4.1 (Ø 0.16)
3 MIN.
(0.118 MIN.)
Ø 1.5 (Ø 0.06)
2.5/3.6
(0.1/0.14)
31 MAX.
(1.22 MAX.)
22.4 MAX.
(0.88 MAX.)
Ø 15 (Ø 0.59)
14.5 MAX.
(0.57 MAX.)
10.7/11.5
(0.42/0.46)
1/4"-28UNF-2A
for metric device M6 x 1
Ø 19.2 (Ø 0.75)
17.2/17.35
(0.67/0.68)
Across flats
1.7/1.8
(0.06/0.07)
2.7 (0.106)
Document Number: 95334
Revision: 08-Jul-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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