5962-01-389-0203 [VISHAY]
Multiplexers/Switches, 1 Func, CMOS, CDIP8;
| 型号： | 5962-01-389-0203 |
| 厂家： | 
VISHAY |
| 描述： | Multiplexers/Switches, 1 Func, CMOS, CDIP8 CD |
| 文件： | 总10页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG417/418/419
Vishay Siliconix
Precision CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D "15-V Analog Signal Range
D On-Resistance—rDS(on): 20 W
D Fast Switching Action—tON: 100 ns
D Ultra Low Power Requirements—PD:35 nW
D TTL and CMOS Compatible
D Wide Dynamic Range
D Precision Test Equipment
D Precision Instrumentation
D Battery Powered Systems
D Sample-and-Hold Circuits
D Military Radios
D Low Signal Errors and Distortion
D Break-Before-Make
Switching Action
D Simple Interfacing
D Reduced Board Space
D Improved Reliability
D MiniDIP and SOIC Packaging
D 44-V Supply Max Rating
D Guidance and Control
Systems
D Hard Disk Drives
DESCRIPTION
The DG417/418/419 monolithic CMOS analog switches were
designed to provide high performance switching of analog
signals. Combining low power, low leakages, high speed, low
on-resistance and small physical size, the DG417 series is
ideally suited for portable and battery powered industrial and
military applications requiring high performance and efficient
use of board space.
high voltage silicon gate (HVSG) process. Break-before-make
is guaranteed for the DG419, which is an SPDT configuration.
An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Vishay Siliconix’s
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417
Dual-In-Line and SOIC
TRUTH TABLE
1
2
3
4
8
7
6
5
S
NC
D
Logic
DG417
DG418
V–
IN
0
1
ON
OFF
ON
GND
V+
OFF
V
L
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V
Top View
DG419
Dual-In-Line and SOIC
TRUTH TABLEĊDG419
1
8
7
6
5
D
S
2
Logic
SW1
SW2
S
1
2
3
4
V–
IN
0
1
ON
OFF
ON
GND
V+
OFF
V
L
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V
Top View
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-1
DG417/418/419
Vishay Siliconix
ORDERING INFORMATION
Temp Range
DG417/418
Package
Part Number
DG417DJ
8-Pin Plastic MiniDIP
8-Pin Narrow SOIC
8-Pin CerDIP
DG418DJ
–40 to 85_C
DG417DY
DG418DY
DG417AK, DG417AK/883, 5962-90701MPA
DG418AK, DG418AK/883, 5962-90702MPA
–55 to 125_C
DG419
8-Pin Plastic MiniDIP
8-Pin Narrow SOIC
8-Pin CerDIP
DG419DJ
–40 to 85_C
DG419DY
–55 to 125_C
DG419AK, DG419AK/883, 5962-90703MPA
NOTE: SMD product is dual marked with /883 number.
ABSOLUTE MAXIMUM RATINGS
b
Voltages Referenced to V–
Power Dissipation (Package)
c
8-Pin Plastic MiniDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin Narrow SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin CerDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
d
e
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V
a
L
Digital Inputs V , V . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V
S
D
Notes:
or 30 mA, whichever occurs first
a. Signals on S , D , or IN exceeding V+ or V– will be clamped by internal
X
X
X
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C
(DJ, DY Suffix) . . . . . . . . . . . . . . –65 to 125_C
d. Derate 6.5 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V
L
V–
V+
Level
Shift/
Drive
V
IN
GND
V–
D
FIGURE 1.
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-2
DG417/418/419
Vishay Siliconix
a
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
V+ = 15 V, V– = –15 V
f
Parameter
Symbol
Tempb Typc Mind Maxd Mind Maxd Unit
V
L
= 5 V, V = 2.4 V, 0.8 V
IN
Analog Switch
e
Analog Signal Range
V
Full
–15
15
–15
15
V
ANALOG
Drain-Source
On-Resistance
I
S
= –10 mA, V = "12.5 V
V+ = 13.5 V, V– = –13.5 V
Room
Full
20
35
45
35
45
D
r
W
DS(on)
Room
Full
–0.1
–0.1
–0.1
–0.4
–0.4
–0.25
–20
0.25
20
–0.25
–5
0.25
5
I
S(off)
V+ = 16.5 V, V– = –16.5 V
DG417
DG418
Room
Full
–0.25
–20
0.25
20
–0.25
–5
0.25
5
Switch Off
Leakage Current
V
V
= #15.5 V
= "15.5 V
D
S
I
D(off)
Room
Full
–0.75
–60
0.75
60
–0.75
–12
0.75
12
DG419
nA
DG417
DG418
Room
Full
–0.4
–40
0.4
40
–0.4
–10
0.4
10
Channel On
Leakage Current
V+ = 16.5 V, V– = –16.5 V
= V = "15.5 V
I
D(on)
V
S
D
Room
Full
–0.75
–60
0.75
60
–0.75
–12
0.75
12
DG419
Digital Control
Input Current
I
Full
Full
0.005
0.005
–0.5
–0.5
0.5
0.5
–0.5
–0.5
0.5
0.5
IL
V
IN
Low
mA
Input Current
High
I
IH
V
IN
Dynamic Characteristics
DG417
DG418
Room
Full
100
60
175
250
175
250
R
L
= 300 W, C = 35 pF
L
Turn-On Time
Turn-Off Time
t
ON
V
S
= "10 V
See Switching Time
Test Circuit
DG417
DG418
Room
Full
145
210
145
210
t
OFF
ns
R
R
= 300 W, C = 35 pF
L
L
Room
Full
175
250
175
250
Transition Time
t
DG419
DG419
V
V
= "10 V
= #10 V
TRANS
S1
S2
Break-Before-Make
Time Delay
= 300 W, C = 35 pF
L
L
t
D
Room
Room
Room
13
60
8
5
5
V
S1
= V = "10 V
S2
Charge Injection
Q
C
= 10 nF, V
= 0 V, R = 0 W
gen
pC
pF
L
gen
Source Off
Capacitance
C
S(off)
f = 1 MHz, V = 0 V
S
DG417
DG418
Drain Off Capacitance
C
C
Room
8
D(off)
DG417
DG418
Room
Room
30
35
D(on)
Channel On
Capacitance
f = 1 MHz, V = 0 V
S
DG419
Power Supplies
Positive Supply
Current
Room
Full
0.001
–0.001
0.001
1
5
1
5
I+
I–
Negative Supply
Current
Room
Full
–1
–5
–1
–5
V+ = 16.5 V, V– = –16.5 V
= 0 or 5 V
mA
Room
Full
1
5
1
5
V
IN
Logic Supply Current
Ground Current
I
L
–0.000
1
Room
Full
–1
–5
–1
–5
I
GND
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG417/418/419
Vishay Siliconix
a
SPECIFICATIONS
FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Otherwise Specified
A Suffix
–55 to 125_C
Mind Maxd Mind Maxd Unit
D Suffix
–40 to 85_C
V+ = 12 V, V– = 0 V
f
Parameter
Symbol
Tempb Typc
V
L
= 5 V, V = 2.4 V, 0.8 V
IN
Analog Switch
e
Analog Signal Range
V
Full
0
12
0
12
V
ANALOG
Drain-Source
On-Resistance
I
S
= –10 mA, V = 3.8 V
D
r
Room
40
W
DS(on)
V+ = 10.8 V
Dynamic Characteristics
Turn-On Time
t
Room
Room
110
40
ON
R
= 300 W, C = 35 pF, V = 8 V
L S
L
See Switching Time Test Circuit
= 300 W, C = 35 pF DG419
= 0 W
Turn-Off Time
t
OFF
ns
Break-Before-Make
Time Delay
t
D
R
Room
Room
60
5
L
L
Charge Injection
Q
C
L
= 10 nF, V
= 0 V, R
gen
pC
gen
Power Supplies
Positive Supply
Current
I+
I–
Room
Room
0.001
Negative Supply
Current
V+ = 13.2 V, V = 5.25 V
L
–0.001
mA
V
IN
= 0 or 5 V
Logic Supply Current
Ground Current
I
Room
Room
0.001
L
I
–0.001
GND
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-4
DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
r
vs. V and Supply Voltage
r
vs. Temperature
DS(on)
DS(on)
D
50
40
30
20
10
0
I
D
= –10 mA
"5 V
40
30
20
10
0
T
A
= 125_C
"8 V
"10 V
25_C
"12 V
"15 V
–55_C
"20 V
–20 –15 –10
–5
0
5
10
15
20
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
V – Drain Voltage (V)
D
Leakage Currents vs. Analog Voltage
Drain Charge Injection
30
20
200
V+ = 15 V
V– = –15 V
= 5 V
C
L
= 10 nF
1 nF
V+ = 16.5 V
V– = –16.5 V
V
L
V
V
= 5 V
L
150
100
50
= 0 V
IN
DG417/418: I
, I
D(off) S(off)
10
DG419: I
S(off)
500 pF
0
100 pF
DG417/418: I
–10
–20
–30
D(on)
, I
DG419: I
D(off) D(on)
0
–50
–15
–10
–5
0
5
10
15
–15
–10
–5
V – Source Voltage (V)
S
0
5
10
15
V
D
or V – Drain or Source Voltage (V)
S
Input Switching Threshold vs. Supply Voltages
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
L
= 7 V
V
L
= 5 V
(V+)
5
10
15
20
25
30
35
40
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-5
DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Switching Time vs. Temperature
Crosstalk and Off Isolation vs. Frequency
140
120
100
80
120
100
V+ = 15 V, V– = –15 V
= 5 V, V = 3 V Pulse
t
ON
V
L
IN
DG417/418/419
Source 2
80
60
40
20
DG419
Source 1
t
OFF
60
40
V+ = 15 V
V– = –15 V
20
V
L
= 5 V
0
0
100
1 k
10 k
100 k
1 M
10 M 100 M
–55 –40 –20
0
20
40
60
80 100 120
Temperature (_C)
f – Frequency (Hz)
Switching Time vs. Supply Voltages
Switching Time vs. V+
130
120
110
80
70
60
50
100
90
t
ON
t
V– = 0 V
ON
V– = 0 V
V
V
= 5 V
= 3 V
L
IN
V
V
= 5 V
L
80
= 3 V
IN
70
60
50
40
30
t
OFF
t
OFF
40
"10
"11
"12
"13
"14
"15 "16
10
11
12
13
14
15
16
Supply Voltage (V)
V+ Supply Voltage (V)
Power Supply Currents vs. Switching Frequency
Supply Current vs. Temperature
10 mA
1 mA
1 mA
V+ = 15 V, V– = –15 V
V+ = 16.5 V, V– = –16.5 V
= 5 V, V = 0 V
V
L
= 5 V, V = 5 V, 50% D Cycle
IN
V
L
IN
100 nA
10 nA
1 nA
I+, I–
100 mA
I+, I–
100 pA
10 pA
1 pA
10 mA
1 mA
I
L
I
GND
100 nA
0.1 pA
100
1 k
10 k
100 k
1 M
10 M
–55 –40 –20
0
20
40
60
80 100 120
f – Frequency (Hz)
Temperature (_C)
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-6
DG417/418/419
Vishay Siliconix
TEST CIRCUITS
V
O
is the steady state output with the switch on.
+5 V
+15 V
3 V
0 V
t <20 ns
t <20 ns
f
r
Logic
Input
50%
V
L
V+
D
S
"10 V
V
O
t
OFF
Switch
Input
V
S
IN
GND
V
O
R
300 W
C
35 pF
L
L
90%
V–
Switch
Output
0 V
t
ON
–15 V
C
L
(includes fixture and stray capacitance)
Note: Logic input waveform is inverted for switches that have the
opposite logic sense.
R
L
V
O
= V
S
R
L
+ r
DS(on)
FIGURE 2. Switching Time (DG417/418)
+5 V
+15 V
Logic
3 V
Input
t <20 ns
t <20 ns
f
r
V
V+
D
L
0 V
S
S
1
V
V
V
O
S1
2
S2
V
S1
= V
S2
V
R
300 W
C
L
35 pF
L
90%
O
IN
Switch
Output
0 V
V–
GND
t
D
t
D
C
L
(includes fixture and stray capacitance)
–15 V
FIGURE 3. Break-Before-Make (DG419)
+5 V
+15 V
V
L
V+
3 V
t <20 ns
r
t <20 ns
f
Logic
Input
S
D
50%
1
V
V
S1
V
O
0 V
S
2
t
t
TRANS
S2
TRANS
R
300 W
C
L
35 pF
L
V
S1
IN
GND
V
01
90%
V–
Switch
Output
10%
V
02
V
S2
–15 V
(includes fixture and stray capacitance)
C
L
R
L
V
O
= V
S
R
L
+ r
DS(on)
FIGURE 4. Transition Time (DG419)
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-7
DG417/418/419
Vishay Siliconix
TEST CIRCUITS
+5 V
+15 V
DV
O
V
O
V
L
V+
D
R
g
S
V
O
IN
X
OFF
ON
OFF
IN
GND
C
10 nF
L
3 V
V–
Q = DV x C
O
L
–15 V
FIGURE 5. Charge Injection
+5 V
+15 V
C
C
+5 V
+15 V
V
V+
D
L
C
C
S
S
V
S
1
R
= 50 W
g
V
L
V+
D
V
O
50 W
S
V
S
V
O
2
R
g
= 50 W
R
L
IN
R
L
0V, 2.4 V
IN
GND
0.8 V
GND
V–
C
C
V–
–15 V
–15 V
V
V
S
V
V
S
Off Isolation = 20 log
X
Isolation = 20 log
TALK
O
O
C = RF bypass
FIGURE 6. Crosstalk (DG419)
FIGURE 7. Off Isolation
+5 V
+15 V
V+
C
C
V
L
S
D
V
S
V
O
R
g
= 50 W
R
L
IN
0V, 2.4 V
GND
V–
C
–15 V
FIGURE 8. Insertion Loss
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-8
DG417/418/419
Vishay Siliconix
TEST CIRCUITS
+5 V
+15 V
+15 V
NC
C
C
C
V
L
V+
S
D
S
S
1
V+
2
DG417/418
DG419
Meter
Meter
0 V, 2.4 V
0 V, 2.4 V
IN
HP4192A
Impedance
Analyzer
IN
HP4192A
Impedance
Analyzer
or Equivalent
or Equivalent
D
2
D
1
GND
V–
GND
V–
f = 1 MHz
f = 1 MHz
C
C
–15 V
–15 V
FIGURE 9. Source/Drain Capacitances
APPLICATIONS
Switched Signal Powers Analog Switch
A positive input pulse turns on the clamping diode D1 and
charges C1. The charge stored on C1 is used to power the
chip;operationissatisfactorybecausetheswitchrequiresless
than 1 mA of stand-by supply current. Loading of the signal
source is imperceptible. The DG419’s on-resistance is a low
100 W for a 5-V input signal.
The analog switch in Figure 10 derives power from its input
signal, provided the input signal amplitude exceeds 4 V and its
frequency exceeds 1 kHz.
This circuit is useful when signals have to be routed to either
of two remote loads. Only three conductors are required: one
for the signal to be switched, one for the control signal and a
common return.
D
1
C
1
0.01 mF
V
L
V+
S
S
1
D
V
OUT
Input
2
R
L2
10 kW
IN
Control
R
10 kW
L1
DG419
GND
V–
FIGURE 10. Switched Signal Powers Remote SPDT Analog Switch
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-9
DG417/418/419
Vishay Siliconix
"APPLICATIONS (CONT'D)
Micropower UPS Transfer Switch
Programmable Gain Amplifier
When VCC drops to 3.3 V, the DG417 changes states, closing
SW1 and connecting the backup cell, as shown in Figure 11.
D1 prevents current from leaking back towards the rest of the
circuit. Current consumption by the CMOS analog switch is
around 100 pA; this ensures that most of the power available
is applied to the memory, where it is really needed. In the
stand-by mode, hundreds of mA are sufficient to retain memory
data.
The DG419, as shown in Figure 12, allows accurate gain
selection in a small package. Switching into virtual ground
reduces distortion caused by rDS(on) variation as a function of
analog signal amplitude.
GaAs FET Driver
When the 5-V supply comes back up, the resistor divider
senses the presence of at least 3.5 V, and causes a new
change of state in the analog switch, restoring normal
operation.
The DG419, as shown in Figure 13 may be used as a GaAs
FETdriver. IttranslatesaTTLcontrolsignalinto–8-V, 0-Vlevel
outputs to drive the gate.
V
L
V+
D
1
SW
1
D
S
V
CC
(5 V)
+
–
R
V
1
SENSE
Memory
DG417
3 V Li Cell
453 kW
IN
GND
V–
R
2
383 kW
FIGURE 11. Micropower UPS Circuit
+5 V
V+
DG419
R
R
1
S
S
1
V
L
GaAs FET
2
2
S
S
1
IN
V
D
OUT
2
D
DG419
5 V
V
IN
–
+
GND
V–
V
OUT
–8 V
FIGURE 12. Programmable Gain Amplifier
FIGURE 13. GaAs FET Driver
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-10
相关型号：
5962-01-391-6756
IC IC,LED DISPLAY DRIVER,4-SEG,COMMON-CATHODE,BIPOLAR,DIP,14PIN,PLASTIC, Display Driver
TI
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