80EPF06 [VISHAY]
Fast Soft Recovery Rectifier Diode, 80 A; 快速软恢复整流二极管， 80 A
| 型号： | 80EPF06 |
| 厂家： | 
VISHAY |
| 描述： | Fast Soft Recovery Rectifier Diode, 80 A |
| 文件： | 总8页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 80 A
FEATURES/DESCRIPTION
The 80EPF..PbF fast soft recovery rectifier series
has been optimized for combined short reverse
recovery time and low forward voltage drop.
Base
common
cathode
Pb-free
Available
2, 4
RoHS*
COMPLIANT
The glass passivation ensures stable reliable
operation in the most severe temperature and power cycling
conditions.
This product series has been designed and qualified for
Industrial level and lead (Pb)-free.
Anode
1
Anode
3
TO-247AC
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
PRODUCT SUMMARY
VF at 40 A
< 1.1 V
• Input rectifications where severe restrictions on conducted
EMI should be met
trr
70 ns
VRRM
200 to 600 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
IF(AV)
IFSM
trr
CHARACTERISTICS
VALUES
200 to 600
80
UNITS
V
Sinusoidal waveform
A
1000
1 A, - 100 A/µs
40 A, TJ = 25 °C
Range
70
ns
V
VF
1.1
TJ
- 40 to 150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK REVERSE
V
RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
PART NUMBER
VOLTAGE
V
80EPF02PbF
80EPF04PbF
80EPF06PbF
200
400
600
300
500
700
17
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
80
UNITS
Maximum average forward current
IF(AV)
TC = 95 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
850
A
Maximum peak one cycle
non-repetitive surge current
IFSM
1000
3610
5100
51 000
Maximum I2t for fusing
I2t
A2s
Maximum I2√t for fusing
I2√t
A2√s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94106
Revision: 05-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1.25
3.5
UNITS
V
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
80 A, TJ = 25 °C
rt
mΩ
V
TJ = 125 °C
VF(TO)
0.85
0.1
TJ = 25 °C
Maximum reverse leakage current
IRM
V
R = Rated VRRM
mA
TJ = 150 °C
17
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
190
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IF at 40 Apk
trr
Irr
Qrr
S
3.4
A
25 A/µs
25 °C
t
di
dt
0.5
µC
Qrr
0.5
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
0.35
40
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(Ibf · in)
Mounting torque
Marking device
80EPF02
80EPF04
80EPF06
Case style TO-247AC
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94106
Revision: 05-Jun-08
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
150
140
130
120
110
100
90
180
160
140
120
100
80
DC
80EPF.. Series
RthJC (DC) = 0.35 K/W
180°
120°
90°
60°
30°
Ø
Conduction angle
RMS limit
60
Ø
30°
Conduction period
40
120°
180°
60°
80EPF.. Series
TJ = 150 °C
20
90°
80
0
0
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
0
20
40
60
80
100
120
140
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
150
140
130
120
110
100
90
At any rated load condition and with
rated VRRM applied following surge.
80EPF.. Series
RthJC (DC) = 0.35 K/W
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
60°
90°
80EPF.. Series
120°
DC
180°
80
1
10
100
0
20
40
60
80 100
120
140
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
140
120
100
80
1000
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
900
800
700
600
500
400
300
200
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
60
Ø
40
Conduction angle
20
80EPF.. Series
TJ = 150 °C
80EPF.. Series
0
0
10 20 30 40 50 60 70 80 90
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 3 - Forward Power Loss Characteristics
Document Number: 94106
Revision: 05-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
1000
100
10
TJ = 25 °C
TJ = 150 °C
80EPF.. Series
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.22
4.0
3.5
IFM = 125 A
80EPF.. Series
TJ = 25 °C
IFM = 125 A
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
IFM = 40 A
IFM = 80 A
IFM = 20 A
3.0
2.5
2.0
1.5
1.0
0.5
0
IFM = 80 A
IFM = 40 A
IFM = 10 A
IFM = 20 A
IFM = 10 A
80EPF.. Series
TJ = 25 °C
IFM = 1 A
160
IFM = 1 A
160 200
0
40
80
120
200
0
40
80
120
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.6
14
80EPF.. Series
TJ = 150 °C
IFM = 80 A
12
10
8
0.5
0.4
0.3
0.2
0.1
0
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 40 A
IFM = 20 A
6
IFM = 10 A
IFM = 10 A
4
IFM = 1 A
2
80EPF.. Series
TJ = 150 °C
IFM = 1 A
160
0
0
40
80
120
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94106
Revision: 05-Jun-08
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
22
20
18
16
14
12
10
8
45
40
35
30
25
20
15
10
5
IFM = 125 A
IFM = 80 A
IFM = 40 A
80EPF.. Series
TJ = 150 °C
80EPF.. Series
TJ = 25 °C
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
IFM = 20 A
IFM = 10 A
6
IFM = 1 A
4
2
0
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
80EPF.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94106
Revision: 05-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
80
E
P
F
06 PbF
1
2
3
4
5
6
1
2
-
-
Current rating (80 = 80 A)
Circuit configuration:
E = Single diode
Package:
3
4
-
-
P = TO-247AC
Type of silicon:
F = Fast diode
02 = 200 V
04 = 400 V
06 = 600 V
5
6
-
-
Voltage code x 100 = VRRM
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95223
Part marking information
http://www.vishay.com/doc?95226
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6
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94106
Revision: 05-Jun-08
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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1
相关型号：
80EPF06PBF
Rectifier Diode, 1 Phase, 1 Element, 80A, 600V V(RRM), Silicon, TO-247AC, LEAD FREE, TO-247AC, 2 PIN
INFINEON
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