AS1B-E3/61T [VISHAY]

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diode;
AS1B-E3/61T
型号: AS1B-E3/61T
厂家: VISHAY    VISHAY
描述:

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diode

光电二极管
文件: 总4页 (文件大小:76K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
New Product  
AS1B thru AS1M  
Vishay General Semiconductor  
Standard Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
DO-214AC (SMA)  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer  
and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
100 V to 1000 V  
30 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
IR  
0.4 µA  
VF at IF = 1.0 A  
TJ max.  
0.84 V  
175 °C  
Terminals: Matte tin plated leads, solderable per J-STD-002  
and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
AS1B  
ASB  
100  
AS1D  
ASD  
200  
AS1G  
ASG  
400  
AS1J  
ASJ  
600  
AS1K  
ASK  
800  
AS1M  
ASM  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Average forward current (fig. 1)  
VRRM  
IF(AV)  
1000  
V
A
1.0  
30  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Document Number: 89118  
Revision: 10-Aug-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
New Product  
AS1B thru AS1M  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.95  
0.84  
0.4  
MAX.  
1.1  
0.92  
5
UNIT  
TA = 25 °C  
Instantaneous forward voltage (1)  
IF = 1.0 A  
VF  
V
TA = 125 °C  
TA = 25 °C  
TA = 100 °C  
Reverse current (2)  
Rated VR  
IR  
µA  
10  
50  
IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
Typical reverse recovery time  
Typical junction capacitance  
trr  
1.5  
-
-
µs  
pF  
4.0 V, 1 MHz  
CJ  
10.4  
Notes  
(1)  
Pulse test: 300 µs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
AS1B  
AS1D  
AS1G  
AS1J  
AS1K  
AS1M  
UNIT  
RθJA  
120  
25  
Typical thermal resistance (1)  
°C/W  
RθJM  
Note  
(1)  
Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mounted  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
AS1J-E3/61T  
0.064  
61T  
5AT  
1800  
7500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
AS1J-E3/5AT  
0.064  
RATINGS AND CHARACTERISTICS CURVES  
(TA = 25 °C unless otherwise noted)  
1.2  
1.4  
Resistive or Inductive Load  
D = 0.8  
D = 0.5  
D = 0.3  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
D = 0.2  
0.8  
0.6  
0.4  
D = 0.1  
D = 1.0  
T
TM Measured  
0.2  
at Mount of Terminal  
D = tp/T  
tp  
0
95 105 115 125 135 145 155 165 175  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
TM - Mount Temperature (°C)  
Average Forward Current (A)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 2 - Forward Power Loss Characteristics  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 89118  
Revision: 10-Aug-09  
New Product  
AS1B thru AS1M  
Vishay General Semiconductor  
10  
100  
10  
1
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TA = 175 °C  
TA = 125 °C  
1
TA = 75 °C  
TA = 25 °C  
0.1  
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
Fig. 5 - Typical Junction Capacitance  
1000  
1000  
100  
10  
TA = 175 °C  
TA = 125 °C  
100  
10  
TA = 75 °C  
1
TA = 25 °C  
0.1  
0.01  
1
0.01  
10 20 30 40 50 60 70 80 90 100  
Percent of Rated Peak Reverse Voltage (%)  
0.1  
1
10  
100  
t - Pulse Duration (s)  
Fig. 4 - Typical Reverse Characteristics  
Fig. 6 - Typical Transient Thermal Impedance  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-214AC (SMA)  
Cathode Band  
Mounting Pad Layout  
0.074 (1.88)  
MAX.  
0.066 (1.68)  
MIN.  
0.110 (2.79)  
0.100 (2.54)  
0.065 (1.65)  
0.049 (1.25)  
0.177 (4.50)  
0.157 (3.99)  
0.060 (1.52)  
MIN.  
0.012 (0.305)  
0.006 (0.152)  
0.208 (5.28)  
REF.  
0.090 (2.29)  
0.078 (1.98)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
0 (0)  
0.208 (5.28)  
0.194 (4.93)  
Document Number: 89118  
Revision: 10-Aug-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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