AS1B-E3/61T [VISHAY]
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diode;型号: | AS1B-E3/61T |
厂家: | VISHAY |
描述: | DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diode 光电二极管 |
文件: | 总4页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
AS1B thru AS1M
Vishay General Semiconductor
Standard Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AC (SMA)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for consumer
and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
IFSM
100 V to 1000 V
30 A
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
IR
0.4 µA
VF at IF = 1.0 A
TJ max.
0.84 V
175 °C
Terminals: Matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
AS1B
ASB
100
AS1D
ASD
200
AS1G
ASG
400
AS1J
ASJ
600
AS1K
ASK
800
AS1M
ASM
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Average forward current (fig. 1)
VRRM
IF(AV)
1000
V
A
1.0
30
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
Document Number: 89118
Revision: 10-Aug-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
AS1B thru AS1M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.95
0.84
0.4
MAX.
1.1
0.92
5
UNIT
TA = 25 °C
Instantaneous forward voltage (1)
IF = 1.0 A
VF
V
TA = 125 °C
TA = 25 °C
TA = 100 °C
Reverse current (2)
Rated VR
IR
µA
10
50
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical reverse recovery time
Typical junction capacitance
trr
1.5
-
-
µs
pF
4.0 V, 1 MHz
CJ
10.4
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
AS1B
AS1D
AS1G
AS1J
AS1K
AS1M
UNIT
RθJA
120
25
Typical thermal resistance (1)
°C/W
RθJM
Note
(1)
Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
AS1J-E3/61T
0.064
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
AS1J-E3/5AT
0.064
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
1.4
Resistive or Inductive Load
D = 0.8
D = 0.5
D = 0.3
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
D = 0.2
0.8
0.6
0.4
D = 0.1
D = 1.0
T
TM Measured
0.2
at Mount of Terminal
D = tp/T
tp
0
95 105 115 125 135 145 155 165 175
0
0.2
0.4
0.6
0.8
1.0
1.2
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89118
Revision: 10-Aug-09
New Product
AS1B thru AS1M
Vishay General Semiconductor
10
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 175 °C
TA = 125 °C
1
TA = 75 °C
TA = 25 °C
0.1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
1000
100
10
TA = 175 °C
TA = 125 °C
100
10
TA = 75 °C
1
TA = 25 °C
0.1
0.01
1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89118
Revision: 10-Aug-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diode
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DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diode
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