BA157GPE [VISHAY]
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;
| 型号： | BA157GPE |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BA157GP thru BA159GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
Reverse Voltage 400 to 1000 V
Forward Current 1.0 A
DO-204AL (DO-41)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
1.0 (25.4)
MIN.
• High temperature metallurgically bonded construction
• For use in high frequency rectifier circuits
• Fast switching for high efficiency
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
• 1.0 Ampere operation at TA=55°C with no thermal
runaway
• Typical IR less than 0.1µA
• High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
®
1.0 (25.4)
MIN.
Mechanical Data
Case: JEDEC DO-204AL, molded plastic over glass body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.3 gram
0.034 (0.86)
0.028 (0.71)
DIA.
0.026 (0.66)
0.023 (0.58)
NOTE: Lead diameter is
for suffix "E" part numbers
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbols BA157GP BA158GP BA159DGP BA159GP Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking voltage
1000
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55°C
IF(AV)
1.0
A
Peak forward surge current
10ms single half sine-wave superimposed
on rated load at TA=25°C
IFSM
20
55
A
Typical thermal resistance (NOTE 1)
RΘJA
°C/W
°C
Operating junction and storage temperature range
TJ, TSTG
– 65 to +175
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbols BA157GP BA158GP BA159DGP BA159GP Units
Maximum instantaneous forward voltage at 1.0A
VF
1.3
V
Maximum DC reverse current
at rated DC blocking voltage TA=25°C
IR
5.0
µA
Maximum reverse recovery time at I =0.5A, I =1.0A, I =0.25A
trr
150
250
500
500
ns
F
R
rr
Typical junction capacitance at 4.0V, 1MHz
CJ
15
pF
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88537
08-Jul-03
www.vishay.com
1
BA157GP thru BA159GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Derating Curve
20
15
10
1.0
TA = 25°C
10ms Single Half Sine-Wave
At Rated Load
Resistive or
Inductive Load
0.8
0.6
0.4
0.2
5
0
0.375" (9.5mm) Lead Length
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 50 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
20
10
10
TJ = 125°C
1
1
TJ = 75°C
TJ = 25°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
0.1
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Transient
Thermal Impedance
Fig. 5 – Typical Junction Capacitance
100
10
100
10
1
T = 25°C
J
f = 1.0MHZ
Vsig = 50mVp-p
1
0.1
0.01
0.1
1
10
100
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88537
08-Jul-03
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