BA783-HG3-18 [VISHAY]

Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2;


型号：	BA783-HG3-18
厂家：	VISHAY
描述：	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2
文件：	总3页 (文件大小：72K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BA782-G, BA783-G

Vishay Semiconductors

www.vishay.com

Band Switching Diodes

FEATURES

• Silicon epitaxial planar diode switches

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Base P/N-HG3 - green, AEC-Q101 qualified

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

MECHANICAL DATA

DESCRIPTION

Case: SOD-123

For electric bandswitching in radio and TV tuners in the

frequency range of (50 to 1000) MHz. The dynamic forward

resistance is constant and very small over a wide range of

frequency and forward current. The reverse capacitance is

also small and largely independent of the reverse voltage.

Weight: approx. 9.4 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

TYPE MARKING

REMARKS

BA782-G3-08 or BA782-G3-18

BA782-HG3-08 or BA782-HG3-18

BA783-G3-08 or BA783-G3-18

BA783-HG3-08 or BA783-HG3-18

BA782-G

Tape and reel

BA783-G

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

Forward continuous current

100

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

125

UNIT

°C

Junction temperature

Storage temperature range

Operating temperature range

T_j

T_stg

T_op

- 55 to + 150

- 55 to + 125

°C

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Forward voltage

Reverse current

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

1000

UNIT



I_F= 100 mA

V_F

I_R

V_R= 20 V

f = 1 MHz, V_R= 1 V

C_D1

C_D2

r_f1

1.5

Diode capacitance

BA782-G

BA783-G

BA782-G

BA783-G

BA782-G

BA783-G

1.25

1.2

f = 1 MHz, V_R= 3 V

0.7

f = (50 to 1000) MHz, I_F= 3 mA

f = (50 to 1000) MHz, I_F= 10 mA

r_f1

1.2



Dynamic forward resistance

Series inductance across case

r_f2

0.5



r_f2

0.9



L_S

2.5

Rev. 1.1, 14-May-14

Document Number: 85240

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BA782-G, BA783-G

Vishay Semiconductors

www.vishay.com

TYPICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

2.0

BA782-G, BA783-G

T_amb= 25 °C

1.8

T_j= 25 °C

f = 1 MHz

1 kHz

1.6

1.4

1.2

1.0

BA783-G

100 MHz

0.8

0.6

0.4

BA782-G

100 MHz

0.2

0.1

100

I_F- Forward Current (mA)

V_R- Reverse Voltage (V)

18798

Fig. 1 - Diode Capacitance

Fig. 2 - Dynamic Forward Resistance vs. Forward Current

PACKAGE DIMENSIONS in millimeters (inches): SOD-123

0.45 (0.018)

0.25 (0.010)

0.5 (0.020) ref.

Cathode bar

Mounting Pad Layout

2.85 (0.112)

2.55 (0.100)

0.85 (0.033)

3.85 (0.152)

2.5 (0.098)

3.55 (0.140)

Rev. 4 - Date: 24. Sep. 2009

Document no.: S8-V-3910.01-001 (4)

17432

Rev. 1.1, 14-May-14

Document Number: 85240

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

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Revision: 02-Oct-12

Document Number: 91000

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