BAS16D [VISHAY]
SMALL SIGNAL DIODES; 小信号二极管
| 型号： | BAS16D |
| 厂家： | 
VISHAY |
| 描述： | SMALL SIGNAL DIODES |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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BAS16D, BAS16WS
SMALL SIGNAL DIODES
.022 (0.55)
FEATURES
♦ Silicon Epitaxial Planar Diode
SOD-123
(BAS16D)
Cathode Mark
♦ Fast switching diode.
Top View
♦ Also available in case SOT-23
with designation BAS16.
.067 (1.70)
.055 (1.40)
MECHANICAL DATA
BAS16D
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Marking Code: A6
min. .010 (0.25)
BAS16WS
Case: SOD-323 Plastic Case
Weight: approx. 0.004 g
Marking Code: A6
.012 (0.3)
SOD-323
(BAS16WS)
Cathode Mark
Top View
.059 (1.5)
.043 (1.1)
min. .010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VR
VALUE
75
UNIT
V
Reverse Voltage
Peak Reverse Voltage
Forward Current (continuous)
VRM
IF
100
250
V
mA
Non-Repetitive Peak Forward Current
at t = 1µs
at t = 1ms
at t = 1s
IFSM
IFSM
IFSM
2.0
1.0
0.5
A
A
A
Power Dissipation at Tamb = 25 °C
BAS16D
3501)
2001)
mW
mW
Ptot
BAS16WS
Maxium Junction Temperature
Storage Temperature Range
Tj
150
– 65 to +1501)
°C
°C
TS
1)Valid provided electrodes are kept at ambient temperture.
10/21/98
BAS16D, BAS16W
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
VF
VF
VF
VF
–
–
–
–
–
–
–
–
715
855
1.00
1.25
mV
mV
V
V
Leakage Current
at VR = 25 V, T = 150 °C
at VR = 75 V
at VR = 75 V, T = 150 °C
j
IR
IR
IR
–
–
–
–
–
–
30
1
50
µA
µA
µA
j
Capacitance
at VR = 0; f = 1 MHz
Ctot
–
–
2
6
pF
Reverse Recovery Time
from IF = 10 mA to IR = 10 mA
IR = 1 mA, RL = 100Ω
trr
–
–
ns
Thermal Resistance
Junction to Ambient Air
BAS16D
BAS16WS
RthJA
–
–
3751)
6501)
°C/W
°C/W
1)Valid provided that electrodes are kept at ambient temperature
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