BAS21-GS08 [VISHAY]
SIGNAL DIODE, PLASTIC, SOT-23, 3 PIN;
| 型号： | BAS21-GS08 |
| 厂家： | 
VISHAY |
| 描述： | SIGNAL DIODE, PLASTIC, SOT-23, 3 PIN |
| 文件： | 总3页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS19–BAS21
Vishay Telefunken
Switching Diodes
Features
Silicon planar epitaxial high speed diode
For switching and general purpose applications
94 8550
Order Instruction
Type
Type Differentiation
Ordering Code
BAS19–GS08
BAS20–GS08
BAS21–GS08
Remarks
BAS19
BAS20
BAS21
V
RRM
V
RRM
V
RRM
= 120 V
= 200 V
= 250 V
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
Type
Symbol
Value
100
150
200
120
200
250
2.5
Unit
V
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Working peak reverse voltage=
DC Blocking voltage
V
RWM
=
V
R
Repetitive peak reverse voltage
Peak forward surge current
V
RRM
V
A
t=1 s
t=1s
I
FSM
0.5
Repetitive peak forward current
Average forward current
Forward current
I
625
200
400
250
mA
mA
mA
mW
FRM
t <0.3ms
I
FAV
p
I
F
T
=T
Case L
(8 mm from Case)= T
Power dissipation
P
tot
amb
Junction and storage
temperature range
T =T
–55...+150
C
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction to ambient
Test Conditions
Symbol
R
thJA
Value
500
Unit
K/W
www.vishay.com
1 (3)
Document Number 85540
Rev. 2, 13-Feb-01
BAS19–BAS21
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
I =100mA
Type
Symbol Min
Typ Max Unit
1.0
V
F
Forward voltage
Reverse current
V
F
I =200mA
1.25
F
V =V
100
100
nA
A
R
Rmax
I
R
V =V
, T = 150 C
j
R
Rmax
I =100 A, t <0.3ms
BAS19
BAS20
BAS21
120
200
250
V
V
V
R
p
Reverse breakdown
voltage
I =100 A
V
(BR)R
R
I =100 A, V <275 V
R
R
I =I =10mA, R =100 ,
F
R
L
Reverse recovery time
Diode capacitance
t
50
5
ns
rr
V =6V to I =1mA. R =100
R
R
L
V =0, f= 1MHz
R
C
pF
D
Dynamic forward
resistance
I =10mA
F
r
5
f
Dimensions in mm
top view
14370
Case: SOT–23, plastic
Terminals: Solderable per MIL–STD–202, Method 208
Approx. weight: 0.008 grams
Marking: BAS19 K80, BAS20 K81, BAS21 K82
www.vishay.com
2 (3)
Document Number 85540
Rev. 2, 13-Feb-01
BAS19–BAS21
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
3 (3)
Document Number 85540
Rev. 2, 13-Feb-01
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