BAS282-GS18 [VISHAY]
Small Signal Schottky Diodes; 小信号肖特基二极管
| 型号： | BAS282-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Schottky Diodes |
| 文件： | 总5页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS281 / 282 / 283
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
• Low capacitance
e2
• Low leakage current
• Low forward voltage drop
• Very low switching time
• Lead (Pb)-free component
9612009
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Mechanical Data
• General purpose and switching Schottky barrier Case: QuadroMELF Glass case SOD80
diode
Weight: approx. 34 mg
• HF-Detector
Cathode Band Color: Black
• Protection circuit
Packaging Codes/Options:
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
• DC / DC converter for notebooks
Parts Table
Part
Type differentiation
VR = 40 V
Ordering code
Remarks
BAS281
BAS282
BAS283
BAS281-GS18 or BAS281-GS08
Tape and Reel
V
V
R = 50 V
R = 60 V
BAS282-GS18 or BAS282-GS08
BAS283-GS18 or BAS283-GS08
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage
Test condition
Part
Symbol
VR
Value
40
Unit
V
BAS281
BAS282
BAS283
VR
VR
50
60
V
V
Peak forward surge current
Repetitive peak forward current
Forward current
tp = 1 s
IFSM
IFRM
IF
500
150
30
mA
mA
mA
Document Number 85500
Rev. 1.7, 17-Mar-06
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BAS281 / 282 / 283
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
320
Unit
K/W
Junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
Junction temperature
Tj
125
°C
°C
Storage temperature range
Tstg
- 65 to + 150
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 0.1 mA
IF = 1 mA
IF = 15 mA
Symbol
Min
Typ.
Max
330
Unit
mV
Forward voltage
VF
VF
VF
IR
410
1000
200
1.6
mV
mV
nA
pF
Reverse current
V
V
R = VRmax
Diode capacitance
R = 1 V, f = 1 MHz
CD
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
100
10
14
VR = 60 V
V
= V
RRM
R
12
RthJA = 540 kW
10
8
P
- Limit at 100 % V
R R
6
4
2
0
1
PR - Limit at 80 % VR
0.1
25
50
75
100
125
150
25
50
75
100
125
150
15794
15795
T - Junction Temperature (°C)
j
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 2. Reverse Current vs. Junction Temperature
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Document Number 85500
Rev. 1.7, 17-Mar-06
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BAS281 / 282 / 283
Vishay Semiconductors
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
f = 1 MHz
Tj =150 °C
Tj = 25 °C
1
0.1
0.01
0
0.5
V - Forward Voltage (V)
F
1
1.5
2.0
0.1
1
10
100
15797
VR - Reverse Voltage (V)
15796
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
12071
Document Number 85500
Rev. 1.7, 17-Mar-06
www.vishay.com
3
BAS281 / 282 / 283
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85500
Rev. 1.7, 17-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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