BAS70-06-HT3 [VISHAY]
Schottky Diodes; 肖特基二极管
| 型号： | BAS70-06-HT3 |
| 厂家： | 
VISHAY |
| 描述： | Schottky Diodes |
| 文件： | 总3页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS70-HT3 to BAS70-06-HT3
VISHAY
Vishay Semiconductors
Schottky Diodes
Features
• These diodes feature very low turn-on voltage and
fast switching.
Top view
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
Pin 1
BAS70-HT3
BAS70-06-HT3
• Space saving LiLiPut package
3
3
Top View
Mechanical Data
Case: LLP75-3B Plastic Package
1
2
2
1
Molding Compound Flammability Rating:
UL 94 V-0
BAS70-05-HT3
BAS70-04-HT3
3
3
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Top View
Weight: 5 mg
2
2
1
1
17007
Parts Table
Part
Ordering code
BAS70-HT3-GS08
Marking
Remarks
BAS70-HT3
73
74
75
76
Tape and Reel
BAS70-04-HT3
BAS70-05-HT3
BAS70-06-HT3
BAS70-04-HT3-GS08
BAS70-05-HT3-GS08
BAS70-06-HT3-GS08
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VRRM
IF
IFSM
Ptot
Value
70
Unit
V
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
Tamb = 25 °C
200
600
200
mA
mA
mW
tp < 1 s, Tamb = 25 °C
Tamb = 25 °C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
°C
Thermal resistance junction to
ambient air
R
430
JA
Junction temperature
Tj
TS
125
°C
°C
Storage temperature range
- 55 to +125
Document Number 85689
Rev. 3, 02-Jun-03
www.vishay.com
1
BAS70-HT3 to BAS70-06-HT3
Vishay Semiconductors
VISHAY
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IR = 10 A (pulsed)
VR = 50 V, tp < 300
Symbol
V(BR)R
Min
70
Typ.
20
Max
Unit
V
Reverse breakdown voltage
Leakage current
Forward voltage
s
IR
VF
VF
Ctot
trr
100
410
1000
2
nA
mV
mV
pF
tp < 300 s, IF = 1.0 mA
tp < 300 s, IF = 15 mA
VR = 0 V, f = 1 MHz
Capacitance
1.5
Reverse recovery time
IF = 10 mA, IR = 10 mA,
5
ns
Irr = 1 mA, RL = 100
Package Dimensions in mm
ISO Method E
18057
www.vishay.com
2
Document Number 85689
Rev. 3, 02-Jun-03
BAS70-HT3 to BAS70-06-HT3
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85689
Rev. 3, 02-Jun-03
www.vishay.com
3
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