BAT46W-V_10 [VISHAY]
Small Signal Schottky Diode; 小信号肖特基二极管型号: | BAT46W-V_10 |
厂家: | VISHAY |
描述: | Small Signal Schottky Diode |
文件: | 总4页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAT46W-V
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features very low turn-on
voltage and fast switching.
• This device is protected by a PN junction
guard ring against excessive voltage,
such as electrostatic discharges.
17431
• This diode is also available in the DO-35 case with
the type designation BAT46 and in the MiniMELF
case with the type designation LL46.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
Type Marking
L6
Remarks
BAT46W-V
BAT46W-V-GS18 or BAT46W-V-GS08
Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VRRM
Value
100
Unit
V
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
Surge forward current
1501)
3501)
7501)
1501)
IF
mA
tp < 1 s, δ < 0.5
tp < 10 ms
IFRM
IFSM
Ptot
mA
mA
mW
Power dissipation1)
Tamb = 65 °C
1) Valid provided that electrodes are kept at ambient temperature
Document Number 85663
Rev. 1.4, 05-Aug-10
www.vishay.com
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
BAT46W-V
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
3001)
Unit
K/W
°C
Thermal resistance junction to ambient air
Junction temperature
Tj
125
Tamb
Tstg
Ambient operating temperature range
Storage temperature range
- 55 to + 125
- 55 to + 150
°C
°C
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
V(BR)
IR
Min
100
Typ.
Max
Unit
V
IR = 100 µA (pulsed)
VR = 1.5 V
Reverse breakdown voltage
0.5
5
µA
µA
µA
µA
µA
µA
µA
µA
mV
mV
mV
pF
pF
VR = 1.5 V, Tj = 60 °C
IR
V
R = 10 V
VR = 10 V, Tj = 60 °C
R = 50 V
IR
0.8
7.5
2
IR
Leakage current2)
V
IR
VR = 50 V, Tj = 60 °C
VR = 75 V
IR
15
IR
5
VR = 75 V, Tj = 60 °C
IF = 0.1 mA
IR
20
VF
VF
VF
CD
CD
250
450
1000
Forward voltage2)
IF = 10 mA
IF = 250 mA
V
R = 0 V, f = 1 MHz
10
6
Diode capacitance
VR = 1 V, f = 1 MHz
2) Pulse test tp < 300 µs, δ < 2 %
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
100
10
1000
100
10
T = 60 °C
j
Tj = 60 °C
1
25 °C
1
Tj = 25 °C
0.1
0.01
0.1
0.01
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1
1.2
18546
V
F
- Forward Voltage (V)
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
18547
Figure 1. Typical Instantaneous Forward Characteristics
www.vishay.com
2
Document Number 85663
Rev. 1.4, 05-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BAT46W-V
Vishay Semiconductors
250
200
150
100
50
0
0
50
100
150
200
18548
T
amb
- Ambient Temperature (°C)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Package Dimensions in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
0.85 (0.033)
3.85 (0.152)
2.5 (0.098)
3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Document Number 85663
Rev. 1.4, 05-Aug-10
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Document Number: 91000
Revision: 11-Mar-11
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