BAV303-GS08 [VISHAY]
DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Diode;
| 型号： | BAV303-GS08 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Diode 二极管 |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV300 / 301 / 302 / 303
VISHAY
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes
• Saving space
• Hermetic sealed parts
• Fits onto SOD-323 / SOT-23 footprints
• Electrical data identical with the devices
BAV100...BAV103 / BAV200...BAV203
9612315
Applications
General purposes
Mechanical Data
Case: MicroMELF Glass Case
Weight: approx. 12 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
Ordering code
Remarks
Tape and Reel
BAV300
BAV301
BAV302
BAV303
V
V
V
V
= 60 V
BAV300-GS18 or BAV300-GS08
RRM
RRM
RRM
RRM
= 120 V
= 200 V
= 250 V
BAV301-GS18 or BAV301-GS08
BAV302-GS18 or BAV302-GS08
BAV303-GS18 or BAV303-GS08
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Part
Symbol
Value
Unit
V
Peak reverse voltage
BAV300
V
V
V
V
60
120
200
250
50
RRM
RRM
RRM
RRM
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
V
V
V
Reverse voltage
V
V
V
V
V
R
R
R
R
100
150
200
250
1
V
V
V
Forward current
I
mA
A
F
Peak forward surge current
Forward peak current
t = 1 s, T = 25 °C
I
FSM
p
j
f = 50 Hz
I
625
mA
FM
Document Number 85545
Rev. 1.8, 14-May-04
www.vishay.com
1
BAV300 / 301 / 302 / 303
Vishay Semiconductors
VISHAY
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
500
Unit
K/W
Junction ambient
mounted on epoxy-glass hard
tissue, Fig. 4
R
thJA
2
35 µm copper clad, 0.9 mm
copper area per electrode
Junction temperature
T
175
°C
°C
j
Storage temperature range
T
- 65 to + 175
stg
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
= 100 mA
Part
Symbol
Min
Typ.
Max
1
Unit
V
Forward voltage
Reverse current
I
V
F
F
V
V
V
V
= 50 V
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
BAV300
I
I
I
I
I
I
I
I
100
100
100
100
15
nA
nA
nA
nA
µA
µA
µA
µA
V
R
R
R
R
R
= 100 V
= 150 V
= 200 V
R
R
R
R
R
R
R
T = 100 °C, V = 50 V
j
R
T = 100 °C, V = 100 V
15
j
R
T = 100 °C, V = 150V
15
j
R
T = 100 °C, V = 200V
15
j
R
Breakdown voltage
I
= 100 µA, t /T = 0.01,
V
V
60
R
p
(BR)
t = 0.3 ms
p
I
= 100 µA, t /T = 0.01,
BAV301
120
V
R
p
(BR)
t = 0.3 ms
p
BAV302
BAV303
V
V
200
250
V
V
(BR)
(BR)
Diode capacitance
V
= 0, f = 1 MHz
C
r
1.5
5
pF
Ω
R
D
Differential forward resistance
Reverse recovery time
I
= 10 mA
F
f
I
= I = 30 mA, i = 3 mA,
t
rr
50
ns
F
R
R
R = 100 Ω
L
www.vishay.com
2
Document Number 85545
Rev. 1.8, 14-May-04
BAV300 / 301 / 302 / 303
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
0.71
1.3
1.27
100
0.152
Scattering Limit
10
9.9
0.355
25
1
V
= V
RRM
R
0.1
10
0.01
200
0
40
80
120
160
2.5
24
T - Junction Temperature ( °C )
j
94 9084
95 10329
Fig. 1 Reverse Current vs. Junction Temperature
Fig. 4 Board for R
definition (in mm)
thJA
1000
T = 25°C
j
100
Scattering Limit
10
1
0.1
2.0
0
0.4
V
0.8
1.2
1.6
- Forward Voltage ( V )
94 9085
F
Fig. 2 Forward Current vs. Forward Voltage
1000
100
T = 25°C
j
10
1
100
0.1
1
10
I
- Forward Current ( mA )
94 9089
F
Fig. 3 Differential Forward Resistance vs. Forward Current
Document Number 85545
Rev. 1.8, 14-May-04
www.vishay.com
3
BAV300 / 301 / 302 / 303
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
ISO Method E
9612072
Reflow Soldering
Wave Soldering
1.2 (0.047)
0.8 (0.031)
1.4 (0.055)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
0.8 (0.031)
2.4 (0.094)
1.0 (0.039)
2.8 (0.109)
www.vishay.com
4
Document Number 85545
Rev. 1.8, 14-May-04
BAV300 / 301 / 302 / 303
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85545
Rev. 1.8, 14-May-04
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
BAV303-GS18
DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明