BB729/D4 [VISHAY]

Variable Capacitance Diode, Very High Frequency, 30pF C(T), 32V, Silicon, PLASTIC, SOD-123, 2 PIN;
BB729/D4
型号: BB729/D4
厂家: VISHAY    VISHAY
描述:

Variable Capacitance Diode, Very High Frequency, 30pF C(T), 32V, Silicon, PLASTIC, SOD-123, 2 PIN

光电二极管
文件: 总3页 (文件大小:88K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BB729 and BB729S  
Vishay Semiconductors  
formerly General Semiconductor  
Tuner Diodes  
SOD-123 (BB729)  
SOD-323 (BB729S)  
.022 (0.55)  
.012 (0.3)  
Cathode Band  
Cathode Band  
Top View  
)
5)  
)
5)  
Top View  
(
140(3.  
2
10(2.  
.
.
.
.
.059 (1.5)  
.043 (1.1)  
53)  
.
x
.067 (1.70)  
.055 (1.40)  
am  
51)  
.
x
503(1.  
.
amx.  
am  
6(0.  
4(0.1)  
.
.010 (0.25)  
min.  
.010 (0.25)  
min.  
Dimensions in inches and (millimeters)  
Mounting Pad Layout SOD-123 (BB729)  
Mounting Pad Layout SOD-323 (BB729S)  
0.055  
(1.40)  
0.062  
(1.60)  
0.055 (1.40)  
0.094 (2.40)  
Features  
Mechanical Data  
• Silicon epitaxial planar capacitance diodes with  
very wide effective capacitance variation for tuning  
the whole range of VHF CTV tuners.  
Case: BB729 = SOD-123 Plastic Case  
BB729S = SOD-323 Plastic Case  
Weight: BB729 = approx. 0.01g  
• These diodes are available as singles or as matched  
sets of two or more units according to the tracking  
condition described in the table of characteristics.  
BB729S = approx. 0.004g  
Packaging Codes/Options:  
SOD-123: D3/10K per 13reel (8mm tape), 30K/box  
D4/3K per 7reel (8mm tape), 30K/box  
SOD-323: D5/10K per 13reel (8mm tape), 30K/box  
D6/3K per 7reel (8mm tape), 30K/box  
• This diode is also available in SOD-323 case with  
the type designation BB729S.  
Maximum Ratings and Thermal Characteristics(TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
V
Reverse Voltage  
VR  
32  
Junction Temperature  
Storage Temperature Range  
TJ  
125  
°C  
°C  
TS  
55 to +125  
Document Number 88156  
15-May-02  
www.vishay.com  
1
BB729 and BB729S  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics(TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Breakdown Voltage  
at IR = 100µA  
V(BR)R  
32  
V
Leakage Current  
at VR = 30V  
IR  
10  
nA  
Capacitance f = 1MHZ  
at VR = 28V  
at VR = 25V  
2.38  
2.68  
26.9  
2.93  
3.12  
33.1  
Ctot  
pF  
at VR = 2V  
Effective Capacitance Ratio f = 1MHZ  
at VR = 1 to 28V  
Ctot (1V)  
12  
Ctot (28V)  
at VR = 2 to 25V  
Ctot (2V)  
Ctot (25V)  
10  
11  
0.8  
Series Resistance  
at f = 470 MHZ, Ctot = 14 pF  
rs  
Series Inductance  
Ls  
2.5  
nH  
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse bias voltage of  
VR = 0.5 to 28V is 3%  
www.vishay.com  
2
Document Number 88156  
15-May-02  
BB729 and BB729S  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Document Number 88156  
15-May-02  
www.vishay.com  
3

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