BF998_08 [VISHAY]

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管,耗尽型
BF998_08
元器件型号: BF998_08
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N沟道双栅MOS -场效应四极管,耗尽型

PDF文件: 总10页 (文件大小:319K)
下载文档:  下载PDF数据表文档文件
型号参数:BF998_08参数

BF998_15

Silicon N-channel dual-gate

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0 JMNIC

BF998_2015

Silicon N-channel dual-gate MOS-FETs

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0 JMNIC

BF998A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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25 VISHAY

BF998A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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44 VISHAY

BF998A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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52 VISHAY

BF998A

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

BF998A

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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4 TEMIC

BF998A-GS08

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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38 VISHAY

BF998A-GS08

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

BF998A-GS18

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4

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0 VISHAY

BF998B

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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29 VISHAY

BF998B

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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39 VISHAY

BF998B

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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3 TEMIC

BF998B-GS08

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

BF998B-GS18

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4

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0 VISHAY