BFG67_08 [VISHAY]
Silicon NPN Planar RF Transistor; 硅NPN平面RF晶体管
| 型号： | BFG67_08 |
| 厂家： | 
VISHAY |
| 描述： | Silicon NPN Planar RF Transistor |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Not for new design, this product will be obsoleted soon
BFG67
Vishay Semiconductors
Silicon NPN Planar RF Transistor
2
1
Features
• Small feedback capacitance
• Low noise figure
e3
• High transition frequency
4
3
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Electrostatic sensitive device.
Observe precautions for handling.
19217
Applications
Mechanical Data
Low noise small signal amplifiers up to 2 GHz. This Case: SOT-143 Plastic case
transistor has superior noise figure and associated
gain performance at UHF, VHF and microwave fre-
quencies.
Weight: approx. 8.0 mg
Marking: V3
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VCBO
Value
20
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCEO
VEBO
IC
10
2.5
V
V
50
mA
mW
°C
Total power dissipation
Junction temperature
Storage temperature range
Tamb ≤ 60 °C
Ptot
Tj
200
150
Tstg
- 65 to +150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthJA
Value
450
Unit
K/W
1)
Junction ambient
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
ICES
ICBO
Min
Typ.
Max
100
Unit
Collector-emitter cut-off current VCE = 20 V, VBE = 0
μA
Collector-base cut-off current
Emitter-base cut-off current
V
V
CB = 15 V, IE = 0
EB = 1 V, IC = 0
100
1
nA
μA
V
IEBO
Collector-emitter breakdown
voltage
I
C = 1 mA, IB = 0
V(BR)CEO
10
65
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
VCEsat
hFE
0.1
0.4
V
DC forward current transfer ratio VCE = 5 V, IC = 15 mA
100
150
Document Number 85074
Rev. 1.3, 08-Sep-08
www.vishay.com
1
BFG67
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
fT
Min
Typ.
7.5
Max
Unit
Transition frequency
VCE = 8 V, IC = 15 mA,
f = 500 MHz
GHz
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
V
V
V
CB = 10 V, f = 1 MHz
CE = 8 V, f = 1 MHz
EB = 0.5 V, f = 1 MHz
Ccb
Cce
Ceb
F
0.35
0.25
0.85
0.8
pF
pF
pF
dB
CE = 8 V, ZS = ZSopt
,
f = 800 MHz, IC = 5 mA
CE = 8 V, ZS = ZSopt
f = 800 MHz, IC = 15 mA
CE = 8 V, ZS = 50 Ω, f = 2 GHz,
C = 5 mA
CE = 8 V, ZS = 50 Ω, f = 2 GHz,
C = 15 mA
CE = 8 V, ZS = 50 Ω, ZL = ZLopt
IC = 15 mA, f = 800 MHz
CE = 8 V, ZS = 50 Ω, ZL = ZLopt
C = 15 mA, f = 2 GHz
CE = 8 V, IC = 15 mA,
V
,
F
F
1.5
2.5
3.0
17
dB
dB
dB
dB
dB
mV
V
I
V
F
I
Power gain
V
,
,
Gpe
Gpe
V1 = V2
V
9
I
Linear output voltage - two tone
intermodulation test
V
160
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
V
CE = 8 V, IC = 15 mA,
IP3
26
dBm
f = 800 MHz
Package Dimensions in mm
3 [0.118]
2.8 [0.110]
0.5 [0.020]
0.5 [0.020]
0.35 [0.014]
2.6 [0.102]
2.35 [0.093]
0.35 [0.014]
1.8 [0.071]
1.6 [0.063]
0.5 [0.020]
0.9 [0.035]
0.75 [0.030]
0.35 [0.014]
foot print recommendation:
1.7 [0.067]
1.2 [0.047]
0.8 [0.031]
2 [0.079]
1.8 [0.071]
0.8 [0.031]
0.8 [0.031]
96 12240
1.9 [0.075]
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2
Document Number 85074
Rev. 1.3, 08-Sep-08
BFG67
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85074
Rev. 1.3, 08-Sep-08
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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