BPW46_08 [VISHAY]
Silicon PIN Photodiode; 硅PIN光电二极管
| 型号： | BPW46_08 |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPW46
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 5 x 3 x 6.4
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
94 8632
• Angle of half sensitivity: ϕ = 65ꢀ
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
BPW46 is a PIN photodiode with high speed and high radiant
sensitivity in a clear, side view plastic package. It is sensitive
to visible and near infrared radiation.
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
Ira (mA)
ϕ (deg)
λ0.1 (nm)
BPW46
50
65
430 to 1100
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
BPW46
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VR
VALUE
UNIT
Reverse voltage
60
215
V
mW
ꢀC
Power dissipation
Tamb ≤ 25 ꢀC
PV
Junction temperature
Tj
100
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
- 40 to + 100
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s
Tsd
ꢀC
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Note
Tamb = 25 ꢀC, unless otherwise specified
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394
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81524
Rev. 1.5, 08-Sep-08
BPW46
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
R = 100 µA, E = 0
R = 10 V, E = 0
SYMBOL
V(BR)
Iro
MIN.
TYP.
MAX.
30
UNIT
V
Breakdown voltage
Reverse dark current
I
60
V
2
70
nA
V
V
R = 0 V, f = 1 MHz, E = 0
R = 3 V, f = 1 MHz, E = 0
CD
pF
Diode capacitance
CD
25
40
pF
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
- 2.6
70
mV
mV/K
µA
Temperature coefficient of Vo
TKVo
Ik
E
A = 1 klx
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ik
47
µA
Temperature coefficient of Vk
TKVk
Ira
0.1
75
%/K
µA
E
A = 1 klx, VR = 5 V
Ee = 1 mW/cm2, λ = 950 nm,
R = 5 V
Reverse light current
Ira
40
50
µA
V
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
ϕ
λp
65
900
deg
nm
λ0.1
NEP
tr
430 to 1100
4 x 10-14
100
nm
V
R = 10 V, λ = 950 nm
W/√Hz
ns
V
V
R = 10 V, RL = 1 kΩ, λ = 820 nm
R = 10 V, RL = 1 kΩ, λ = 820 nm
Fall time
tf
100
ns
Note
amb = 25 ꢀC, unless otherwise specified
T
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
1.4
1000
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
100
10
VR = 10 V
1
20
40
80
100
60
0
20
40
60
80
100
Tamb - Ambient Temperature (ꢀC)
94 8416
94 8403
Tamb - Ambient Temperature (ꢀC)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81524
Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
395
BPW46
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
1000
100
10
80
E = 0
f = 1 MHz
60
40
20
0
VR = 5 V
λ = 950 nm
1
0.1
0.01
10
0.1
1
0.1
1
10
100
Ee - Irradiance (mW/cm2)
94 8417
948407
VR - Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
1.0
0.8
0.6
0.4
0.2
0
100
10
V
= 5 V
R
1
0.1
10
1
2
3
4
10
10
10
1150
350
550
750
950
E
A
- Illuminance (lx)
94 8420
λ - Wavelength (nm)
94 8418
Fig. 4 - Reverse Light Current vs. Illuminance
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
0ꢀ
10ꢀ
20ꢀ
100
30ꢀ
40ꢀ
1 mW/cm2
0.5 mW/cm2
1.0
0.9
0.2 mW/cm2
10
50ꢀ
60ꢀ
0.1 mW/cm2
0.8
0.05 mW/cm2
70ꢀ
0.7
80ꢀ
λ = 950 nm
1
100
0.1
1
10
0.6
0.4
0.2
0
94 8419
VR - Reverse Voltage (V)
94 8406
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
www.vishay.com
396
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81524
Rev. 1.5, 08-Sep-08
BPW46
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
A
technical drawings
according to DIN
specifications
- 0.2
5
(0.7)
Sensitive area
< 0.65
Area not plane
1.5
0.2
0.05
0.95
0.45
0.05
2.54 nom.
0.4
Drawing-No.: 6.544-5109.01-4
Issue:1; 01.07.96
96 12196
Document Number: 81524
Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
397
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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