BPW46_14 [VISHAY]
Silicon PIN Photodiode;
| 型号： | BPW46_14 |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode |
| 文件： | 总5页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPW46
Vishay Semiconductors
www.vishay.com
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 5 x 3 x 6.4
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
94 8632
• Angle of half sensitivity: = 65ꢀ
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
BPW46 is a PIN photodiode with high speed and high
radiant sensitivity in a clear, side view plastic package. It is
sensitive to visible and near infrared radiation.
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
Ira (μA)
(deg)
0.1 (nm)
BPW46
50
65
430 to 1100
Note
•
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
BPW46
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
Note
MOQ: minimum order quantity
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
60
215
V
mW
ꢀC
Power dissipation
Tamb 25 ꢀC
PV
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tj
100
Tamb
Tstg
-40 to +100
-40 to +100
260
ꢀC
ꢀC
t 5 s
Tsd
ꢀC
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Rev. 1.8, 03-Jun-14
Document Number: 81524
1
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW46
Vishay Semiconductors
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
R = 100 μA, E = 0
R = 10 V, E = 0
SYMBOL
V(BR)
Iro
MIN.
TYP.
MAX.
30
UNIT
V
Breakdown voltage
Reverse dark current
I
60
V
2
nA
V
V
R = 0 V, f = 1 MHz, E = 0
R = 3 V, f = 1 MHz, E = 0
CD
70
pF
Diode capacitance
CD
25
40
pF
Open circuit voltage
Ee = 1 mW/cm2, = 950 nm
Ee = 1 mW/cm2, = 950 nm
EA = 1 klx
Ee = 1 mW/cm2, = 950 nm
Ee = 1 mW/cm2, = 950 nm
EA = 1 klx, VR = 5 V
Vo
350
-2.6
70
mV
mV/K
μA
Temperature coefficient of Vo
TKVo
Ik
Short circuit current
Ik
47
μA
Temperature coefficient of Ik
TKIk
Ira
0.1
75
%/K
μA
Ee = 1 mW/cm2, = 950 nm,
Reverse light current
Ira
40
50
μA
VR = 5 V
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
p
65
900
deg
nm
0.1
NEP
tr
430 to 1100
4 x 10-14
100
nm
V
R = 10 V, = 950 nm
W/Hz
ns
V
V
R = 10 V, RL = 1 k, = 820 nm
R = 10 V, RL = 1 k, = 820 nm
Fall time
tf
100
ns
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
1.4
1000
100
10
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
VR = 10 V
80
1
20
40
80
100
60
0
20
40
60
100
Tamb - Ambient Temperature (°C)
94 8416
94 8403
T
amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.8, 03-Jun-14
Document Number: 81524
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW46
Vishay Semiconductors
www.vishay.com
1000
100
10
80
60
40
20
0
E = 0
f = 1 MHz
VR = 5 V
λ = 950 nm
1
0.1
0.01
10
0.1
1
0.1
1
10
100
Ee - Irradiance (mW/cm2)
94 8417
948407
VR - Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
1.0
0.8
0.6
0.4
0.2
0
100
10
V
= 5 V
R
1
0.1
10
1
2
3
4
10
10
10
1150
350
550
750
950
E
A
- Illuminance (lx)
λ - Wavelength (nm)
94 8418
94 8420
Fig. 4 - Reverse Light Current vs. Illuminance
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
100
30°
40°
1 mW/cm2
0.5 mW/cm2
1.0
0.9
0.2 mW/cm2
10
50°
60°
0.1 mW/cm2
0.8
0.7
0.05 mW/cm2
70°
80°
λ = 950 nm
1
100
0.1
1
10
0.6
0.4
0.2
0
94 8419
VR - Reverse Voltage (V)
94 8406
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.8, 03-Jun-14
Document Number: 81524
3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW46
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters
C
A
technical drawings
according to DIN
specifications
- 0.2
5
(0.7)
Sensitive area
< 0.65
Area not plane
1.5
0.2
0.05
0.95
0.45
0.05
2.54 nom.
0.4
Drawing-No.: 6.544-5109.01-4
Issue:1; 01.07.96
96 12196
Rev. 1.8, 03-Jun-14
Document Number: 81524
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Revision: 08-Feb-17
Document Number: 91000
1
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