BRT13-H-X017 [VISHAY]
Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN;
| 型号： | BRT13-H-X017 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN 三端双向交流开关 输出元件 |
| 文件： | 总8页 (文件大小：381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRT11/ 12/ 13
Vishay Semiconductors
Optocoupler, Phototriac Output
Features
• I
= 300 mA
TRMS
• High Static dV /dt < 10,000 V/µs
• Electrically Insulated between Input
and output circuit
• Microcomputer compatible - Very Low Trigger
Current
MT2
crq
A
1
6
5
4
e3
NC
2
3
C
NC
MT1
• Non-zero voltage detectors High input Sensitivity
• Lead (Pb)-free component
i179041
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
Order Information
• UL1577, File No. E52744 System Code J
Part
Remarks
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
BRT12-F
600 V VDRM, 1.2 mA IFT, DIP-6
400 V VDRM, 2 mA IFT, DIP-6
600 V VDRM, 2 mA IFT, DIP-6
800 V VDRM, 2 mA IFT, DIP-6
400 V VDRM, 3 mA IFT, DIP-6
600 V VDRM, 3 mA IFT, DIP-6
800 V VDRM, 3 mA IFT, DIP-6
BRT11-H
BRT12-H
BRT13-H
BRT11-M
BRT12-M
BRT13-M
BRT12-F-X006
Applications
Industrial controls
Office equipment
Consumer appliances
600 V VDRM, 1.2 mA IFT, DIP-6 400 mil
(option 6)
Description
BRT12-F-X007
BRT12-H-X006
600 V VDRM, 1.2 mA IFT, DIP-6 400 mil
(option 7)
The BRT11/12/13 are AC optocouplers non-zero volt-
age detectors consisting of two electrically insulated
lateral power ICs which integrate a thyristor system, a
photo detector and noise suppression at the output
and an IR GaAs diode input.
600 V VDRM, 2 mA IFT, DIP-6 400 mil
(option 6)
BRT12-H-X007
BRT12-H-X009
BRT13-H-X006
600 V VDRM, 2 mA IFT, SMD-6 (option 7)
600 V VDRM, 2 mA IFT, SMD-6 (option 9)
800 V VDRM, 2 mA IFT, DIP-6 400 mil
(option 6)
BRT13-H-X007
BRT13-H-X009
BRT12-M-X006
800 V VDRM, 2 mA IFT, SMD-6 (option 7)
800 V VDRM, 2 mA IFT, SMD-6 (option 9)
600 V VDRM, 3 mA IFT, DIP-6 400 mil
(option 6)
For additional information on the available options refer to
Option Information.
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
1
BRT11/ 12/ 13
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6
Unit
V
Reverse voltage
Forward continuous current
Surge forward current
Power dissipation
IF
20
1.5
30
mA
A
IFSM
Pdiss
t ≤ 10 µs
mW
Output
Parameter
Test condition
Part
Symbol
VDRM
Value
400
Unit
Repetitive peak off-state voltage
BRT11
BRT12
BRT13
V
V
VDRM
VDRM
ITRMS
ITSM
600
800
300
3
V
RMS on-state current
Single cycle surge current
Power dissipation
mA
A
50 Hz
Pdiss
600
mW
Coupler
Parameter
Test condition
Symbol
Value
630
Unit
Max. power dissipation
Ptot
Tamb
Tstg
mW
°C
Ambient temperature
Storage temperature
- 40 to + 100
- 40 to + 150
5300
°C
Insulation test voltage 1)
between input/output circuit
(climate in acc. with DIN 40046,
part 2, Nov. 74)
VISO
VRMS
Reference voltage in acc. with
VDE 0110 b
Vref
Vref
CTI
500
600
175
VRMS
VDC
Reference voltage in acc. with
VDE 0110 b (insulation group C)
Creepage resistance (in acc.
with DIN IEC 112/VDE 0303,
part 1)
(group IIIa acc. to DIN VDE
0109)
≥ 1012
≥ 1011
Insulation resistance
V
V
IO = 500 V, Tamb = 25 ° C
IO = 500 V, Tamb = 100 ° C
RIO
RIO
Ω
Ω
DIN humidity category,
DIN 40 040
F
Creepage distance
(input/output circuit)
≥ 7.2
≥ 7.2
mm
mm
Clearance (input/output circuit)
1) Test AC voltage in acc. with DIN 57883, June 1980
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2
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
VF
Min
Typ.
1.1
Max
1.35
Unit
V
Forward voltage
Reverse current
IF = 10 mA
R = 6 V
V
IR
10
µA
Thermal resistance 2) junction - ambient
Rthja
750
°C/W
2) Static air, SITAC soldered in pcb or base plate.
Output
Parameter
Test condition
Symbol
dV/dtcr
Min
10
Typ.
Max
Unit
Critical rate of rise of off-state
voltage
VD = 0.67 VDRM, TJ = 25 °C
kV/µs
VD = 0.67 VDRM, TJ = 80 °C
dV/dtcr
5
kV/µs
kV/µs
Critical rate of rise of voltage at
current commutation
V
D = 0.67 VDRM, TJ = 25 °C,
dV/dtcrq
10
dI/dtcrq ≤ 15 A/ms
V
D = 0.67 VDRM, TJ = 80 °C,
dV/dtcrq
5
8
kV/µs
dI/dtcrq ≤ 15 A/ms
Critical rate of rise of on-state
current
dI/dtcr
Itp
A/µs
Pulse current
tp ≤ 5 µs, f 0 100 Hz,
dItp/dt ≤ 8 A/µs
2
A
On-state voltage
Off-state current
Holding current
IT = 300 mA
VT
ID
2.3
100
500
125
V
µA
T
C = 80 °C, VDRM
D = 10 V
RthJA
0.5
80
V
IH
µA
Thermal resistance 2) junction -
ambient
Rthja
°C/W
2) Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter
Test condition
VD = 10 V, F - Versions
Symbol
IFT
Min
Typ.
7
Max
1.2
Unit
mA
Trigger current
V
V
D = 10 V, H - Versions
D = 10 V, M - Versions
IFT
IFT
0.4
0.8
2
3
mA
mA
Trigger current temperature
gradient
∆IFT/∆Tj
14
µA/°C
Capacitance (input-output)
VR = 0 V, f = 1 kHz
CIO
2
pF
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
3
BRT11/ 12/ 13
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
tgd=f(IF/IFT25°C)
I
FTN=
FTN normalized to
to pIF ≥ 1 m
f(tpIF)
I
IFT refering
VD=200V
t
V
op=220V, = 4 0 ...60Hz typ.
f
17242
17239
Figure 1. Typical Trigger Delay Time
Figure 4. Pulse Trigger Current
IF = ƒ(VF)
Ptot= (ITRMS)
17240
17243
Figure 2. Power Dissipation 40 to 60 Hz Line Operation
Figure 5. Typical Input Characteristics
IT = ƒ(VT)
ID=f(Tj)
VD=800V
17241
17244
Figure 3. Typical Off-State Current
Figure 6. Typical Output Characteristics
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4
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
I
TRMS = ƒ(TA)
RthJA = 125 K/W 3)
ITRMS = ƒ(TPIN5)
R
thJ-PIN5 = 16,5 K/W 4)
17246
17245
Figure 7. Current Reduction
Figure 8. Current Reduction
Package Dimensions in Inches (mm)
pin one ID
3
2
1
.248 (6.30)
.256 (6.50)
ISO Method A
4
6
5
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (1.22)
.052 (1.32)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4°
typ .
18°
.130 (3.30)
.150 (3.81)
.033 (0.84) typ.
3°–9°
.008 (.20)
.012 (.30)
.018 (0.46)
.020 (0.51)
.033 (0.84) typ.
.100 (2.54) typ
.300–.347
(7.62–8.81)
i178014
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
5
BRT11/ 12/ 13
Vishay Semiconductors
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.331 (8.4)
MIN.
15° max.
18450
.315 (8.00)
min.
.406 (10.3)
MAX.
.430 (10.92)
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6
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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