BS107 [VISHAY]
N-Channel 200-V (D-S) MOSFETs; N沟道200 -V （D -S ）的MOSFET
| 型号： | BS107 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 200-V (D-S) MOSFETs |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN2010L/BS107
Vishay Siliconix
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)
VGS(th) (V)
ID (A)
VN2010L
BS107
10 @ V = 4.5 V
0.8 to 1.8
0.8 to 3
0.19
0.12
GS
200
28 @ V = 2.8 V
GS
D Low On-Resistance: 6 W
D Low Offset Voltage
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Secondary Breakdown Free: 220 V D Full-Voltage Operation
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
“Run-Away”
TO-226AA
(TO-92)
TO-92-18RM
(TO-18 Lead Form)
1
2
3
1
2
3
S
G
D
D
G
S
Device Marking
Front View
Device Marking
Front View
“S” VN
2010L
xxyy
“S” BS
107
xxyy
“S” = Siliconix Logo
xxyy = Date Code
“S” = Siliconix Logo
xxyy = Date Code
Top View
VN2010L
Top View
BS107
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
VN2010L
BS107
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
200
"30
0.19
0.12
0.8
200
"25
0.12
DS
GS
V
T = 25_C
A
A
Continuous Drain Current (T = 150__C)
I
J
D
T = 100_C
A
a
Pulsed Drain Current
I
DM
T = 25_C
A
0.8
0.5
A
Power Dissipation
P
W
D
T = 100_C
0.32
156
Thermal Resistance, Junction-to-Ambient
R
thJA
250
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1
VN2010L/BS107
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
VN2010L
BS107
Parameter
Symbol
Test Conditions
Typa Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 100 mA
220
1.2
200
0.8
200
0.8
(BR)DSS
GS
D
V
V
V
= V , I = 1 mA
1.8
3
GS(th)
DS
GS D
V
= 0 V, V = "20 V
"10
DS
DS
GS
Gate-Body Leakage
I
nA
GSS
V
= 0 V, V = "15 V
"10
1
GS
Drain Leakage Current
I
V
= 70 V, V = 0.2 V
DS GS
DSV
V
V
= 130 V, V = 0 V
GS
0.03
DS
DS
mA
= 160 V, V = 0 V
GS
1
Zero Gate Voltage Drain Current
I
DSS
T
J
= 125_C
100
b
On-State Drain Current
I
V
= 10 V, V = 10 V
0.7
6
0.1
A
D(on)
DS
GS
V
V
= 2.8 V, I = 0.02 A
D
28
GS
GS
b
= 4.5 V, I = 0.05 A
D
6
10
20
Drain-Source On-Resistance
r
W
DS(on)
T
J
= 125_C
11
180
b
Forward Transconductance
g
fs
V
= 15 V, I = 0.1 A
125
DS
D
mS
pF
Common Source
Output Conductance
g
V
= 15 V, I = 0.05 A
0.15
os
DS
D
b
Dynamic
Input Capacitance
C
C
35
9
60
30
15
iss
Output Capacitance
V
=25 V, V = 0 V, f = 1 MHz
GS
oss
DS
Reverse Transfer Capacitance
C
rss
1
Switchingc
Turn-On Time
Turn-Off Time
t
5
20
30
V
= 25 V, R = 250 W
L
ON
DD
ns
I
D
^ 0.1 A, V
= 10 V
GEN
t
21
OFF
R
G
= 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
VNDQ20
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-2
VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
0.5
0.4
0.3
0.2
0.1
0
50
40
30
20
10
0
V
= 10 V
GS
5 V
4 V
V
= 2.2 V
GS
2.0 V
6 V
3 V
1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
0.6 V
1.6
2 V
0
1
2
3
4
5
0
0.4
0.8
1.2
2.0
VDS – Drain-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
500
400
300
200
100
0
28
24
20
16
12
8
V
= 15 V
25_C
DS
TJ = –55_C
125_C
I
= 500 mA
D
250 mA
50 mA
8
4
0
0
1
2
3
4
5
0
4
12
16
20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
On-Resistance vs. Drain Current
12.5
2.25
2.00
1.75
1.50
1.25
1.00
0.75
V
= 4.5 V
GS
I
D
= 50 mA
10.0
7.5
5.0
2.5
0
V
= 10 V
GS
10 mA
0.50
0
0.2
0.4
0.6
0.8
1.0
–50
–10
30
70
110
150
ID – Drain Current (A)
TJ – Junction Temperature (_C)
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-3
VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Threshold Region
Capacitance
10
60
50
40
30
20
10
0
V
f
= 0 V
V
= 5 V
GS
DS
= 1 MHz
TJ = 150_C
C
iss
1
C
oss
25_C
0.1
0.01
C
rss
–55_C
0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Gate Charge
Load Condition Effects on Switching
15.0
12.5
10.0
7.5
5.0
2.5
0
100
50
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
I
= 0.1 A
D
V
= 100 V
DS
20
10
5
160 V
t
d(off)
t
t
r
d(on)
2
1
t
f
0
1
250
500
750
1000
1250
0.01
0.1
1.0
Qg – Total Gate Charge (pC)
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
0.02
P
DM
0.1
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 156_C/W
thJA
(t)
Z
0.01
3. T – T = P
JM
A
DM thJA
Single Pulse
0.01
0.1
1
10
100
1 K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-4
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