BU10065S-M3/45 [VISHAY]
Bridge Rectifiers;型号: | BU10065S-M3/45 |
厂家: | VISHAY |
描述: | Bridge Rectifiers |
文件: | 总6页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BU1006-M3, BU1008-M3, BU1010-M3
www.vishay.com
Vishay General Semiconductor
Enhanced isoCink+TM Bridge Rectifiers
FEATURES
• UL recognition file number E309391 (QQQX2)
UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g. BU10065S)
+
-
~
~
~
• Superior thermal conductivity
~
+
-
• Solder dip 275 °C max. 10 s, per JESD 22-B106
isoCink+™
Case Style BU
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
+
~
~
-
* Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
MECHANICAL DATA
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
Case: BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
PRIMARY CHARACTERISTICS
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Package
IF(AV)
BU
10 A
VRRM
600 V, 800 V, 1000 V
120 A
Polarity: As marked on body
IFSM
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
IR
5 μA
VF at IF = 5 A
TJ max.
Diode variations
0.88 V
150 °C
In-Line
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
BU1006
BU1008
BU1010
UNIT
Maximum repetitive peak reverse voltage
600
800
10
1000
V
T
C = 92 °C (1)
TA = 25 °C (2)
Average rectified forward current, (fig. 1, 2)
IO
A
A
3.2
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
IFSM
120
Rating for fusing (t < 8.3 ms) TJ = 25 °C
I2t
60
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Notes
(1)
With heatsink
Without heatsink, free air
(2)
Revision: 27-Jun-13
Document Number: 89295
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1006-M3, BU1008-M3, BU1010-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.98
0.88
-
MAX.
1.05
0.95
5.0
UNIT
TA = 25 °C
Maximum instantaneous forward
IF = 5.0 A
rated VR
VF
V
voltage per diode (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
Maximum reverse current per diode
IR
μA
pF
64
250
-
Typical junction capacitance per diode 4.0 V, 1 MHz
Note
CJ
43
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1006
BU1008
BU1010
UNIT
(1)
RJC
3.0
20
Typical thermal resistance
°C/W
(2)
RJA
Notes
(1)
With 60 W air cooled heatsink
Without heatsink, free air
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
BU1006-M3/45
BU1006-M3/51
BU10065S-M3/45
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
4.55
4.55
4.55
45
51
45
20
250
20
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
10
8
4
3
2
1
0
With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
6
TC
TC
4
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
2
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
Case Temperature (°C)
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Forward Current Derating Curve
Revision: 27-Jun-13
Document Number: 89295
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1006-M3, BU1008-M3, BU1010-M3
www.vishay.com
Vishay General Semiconductor
24
20
16
12
8
1000
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
4
0
0.01
0
1
2
3
4
5
6
7
8
9
10 11
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Dissipation
Fig. 5 - Typical Reverse Characteristics Per Diode
100
10
100
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
10
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 27-Jun-13
Document Number: 89295
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1006-M3, BU1008-M3, BU1010-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type BU
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
View A
0.020R (TYP.)
9°
0.125 (3.2) x 45°
TYP.
0.310 (7.9)
0.290 (7.4)
Chamfer
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
0.080 (2.03)
0.060 (1.52)
(1.9) R
0.085 (2.16)
0.065 (1.65)
+
~ ~
-
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) REF.
0.094 (2.39) x 45° REF.
R 0.11
(2.78) REF.
0.64 (16.28) REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Revision: 27-Jun-13
Document Number: 89295
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1006-M3, BU1008-M3, BU1010-M3
www.vishay.com
Vishay General Semiconductor
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
9°
TYP.
0.860 (21.8)
0.020R (TYP.)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R
0.085 (2.16)
0.065 (1.65)
5°
TYP.
+
~ ~
-
0.080 (2.03)
0.060 (1.52)
0.100 (2.54)
0.085 (2.16)
0.219 (5.55)
MAX.
0.315 (8.0)
0.276 (7.0)
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.134 (3.40)
0.087 (2.20)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
APPLICATION NOTE
(1)
Device UL approved for safety use dielectric strength of 1500 V.
(2)
(3)
If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
Heat sink shape recommendation:
(3)
Heatsink
2.5 mm MIN.
2.5 mm MIN.
By Safety Requirements
Revision: 27-Jun-13
Document Number: 89295
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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