BU1208-E3/51 [VISHAY]
Diode Rectifier Bridge Single 800V 3.4A 4-Pin Case BU Bulk;
| 型号： | BU1208-E3/51 |
| 厂家： | 
VISHAY |
| 描述： | Diode Rectifier Bridge Single 800V 3.4A 4-Pin Case BU Bulk 局域网 二极管 |
| 文件： | 总5页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BU1206, BU1208, BU1210
Vishay General Semiconductor
www.vishay.com
Enhanced isoCink+™ Bridge Rectifiers
FEATURES
isoCink+™
• UL recognition file number E312394
• Thin single in-line package
• Glass passivated chip junction
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g. BU12065S)
Available
+
-
~
~
~
• Superior thermal conductivity
~
-
+
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Case Style BU
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
+
~
~
-
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Package
BU
Case: BU
IF(AV)
12 A
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
600 V, 800 V, 1000 V
150 A
5 μA
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
IR
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
VF at IF = 6 A
TJ max.
0.88 V
150 °C
In-line
E3 and M3 suffix meet JESD 201 class 1A whisker test
Circuit configuration
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1206
BU1208
800
BU1210
UNIT
Maximum repetitive peak reverse voltage
VRRM
600
1000
V
T
C = 85 °C (1)
TA = 25 °C (2)
12
Average rectified forward current (Fig. 1, 2)
IO
A
3.4
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
IFSM
150
A
Rating for fusing (t < 8.3 ms) TJ = 25 °C
I2t
93
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes
(1)
With 60 W air cooled heatsink
Without heatsink, free air
(2)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.98
0.88
-
MAX.
UNIT
TA = 25 °C
1.05
0.95
5.0
250
-
Maximum instantaneous forward
IF = 6.0 A
Rated VR
VF
V
voltage per diode (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
Maximum reverse current per diode
IR
μA
pF
74
Typical junction capacitance per diode 4.0 V, 1 MHz
CJ
50
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 29-Aug-17
Document Number: 84802
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1206, BU1208, BU1210
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1206
BU1208
2.7
BU1210
UNIT
(1)
RJC
Typical thermal resistance
°C/W
(2)
RJA
20
Notes
(1)
With 60 W air cooled heatsink
Without heatsink, free air
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
BU1206-E3/45
BU1206-E3/51
BU1206-M3/45
BU12065S-E3/45
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
4.66
4.66
4.66
4.66
45
51
45
45
20
250
20
Paper tray
Tube
20
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
14
12
10
8
30
25
20
15
10
5
With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
TC
T
C
6
4
2
0
0
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Forward Power Dissipation
5
4
3
2
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
1
0
0.01
0
25
50
75
100
125
150
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Current Derating Curve
Fig. 4 - Typical Forward Characteristics Per Diode
Revision: 29-Aug-17
Document Number: 84802
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1206, BU1208, BU1210
Vishay General Semiconductor
www.vishay.com
1000
100
10
100
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
10
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type BU
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
View A
0.020R (TYP.)
9°
0.125 (3.2) x 45°
TYP.
0.310 (7.9)
0.290 (7.4)
Chamfer
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
0.080 (2.03)
0.060 (1.52)
(1.9) R
0.085 (2.16)
0.065 (1.65)
+
~
~
-
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) REF.
0.094 (2.39) x 45° REF.
R 0.11
(2.78) REF.
0.64 (16.28) REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Revision: 29-Aug-17
Document Number: 84802
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU1206, BU1208, BU1210
Vishay General Semiconductor
www.vishay.com
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
9°
TYP.
0.860 (21.8)
0.020R (TYP.)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R
0.085 (2.16)
0.065 (1.65)
5°
TYP.
+
~
~
-
0.080 (2.03)
0.060 (1.52)
0.100 (2.54)
0.085 (2.16)
0.219 (5.55)
MAX.
0.315 (8.0)
0.276 (7.0)
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.134 (3.40)
0.087 (2.20)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
APPLICATION NOTE
1. Device UL approved for safety use dielectric strength of 1500 V
2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
3. Heat sink shape recommendation:
(3)
Heatsink
2.5 mm MIN.
2.5 mm MIN.
By Safety Requirements
Revision: 29-Aug-17
Document Number: 84802
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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