BY448GP/62 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1650V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;
BY448GP/62
型号: BY448GP/62
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1650V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

文件: 总3页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BY448GP  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Miniature Clamper/Damper Glass  
Passivated Rectifier  
Reverse Voltage 1650V  
Forward Current 1.5A  
DO-204AC (DO-15)  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
Features  
• Specially designed for clamping circuits, horizontal  
deflection systems and damper applications  
1.0 (25.4)  
min.  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0.  
• High temperature metallurgically bonded construction  
• Cavity-free glass passivated junction  
• 1.5 Ampere operation at TA=50°C with no thermal runaway  
Typical IR less than 0.1µA  
0.300 (7.6)  
0.230 (5.8)  
• Capable of meeting environmental standards of MIL-S-19500  
• High temperature soldering guaranteed: 350°C/10 seconds,  
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
®
Mechanical Data  
0 (25.4)  
min.  
Case: JEDEC DO-204AC, molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Dimensions  
in inches and  
(millimeters)  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.015 oz., 0.4 g  
*Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306.  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
Value  
1650  
1150  
1650  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
Maximum DC blocking voltage  
V
Maximum average forward rectified current  
0.375” (9.5mm) lead length at TA = 50°C  
IF(AV  
)
1.5  
40  
50  
A
A
Peak forward surge current 8.3ms single half sine  
wave superimposed on rated load (JEDEC Method)  
IFSM  
Maximum full load reverse current full cycle  
average 0.375” (9.5mm) lead length at TA = 100°C  
IR(AV)  
µA  
Typical thermal resistance (Note 1)  
RΘJA  
55  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
–65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
Unit  
Maximum instantaneous forward voltage at 3.0A  
VF  
1.6  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25°C  
TA = 100°C  
5.0  
100  
IR  
µA  
Maximum reverse recovery time at IF = 0.5A, IR = 50mA  
trr  
trr  
20  
µs  
µs  
Maximum reverse recovery time  
at IF=0.5A, IR=1.0A, Irr=0.25A  
typical  
maximum  
0.5  
1.5  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
15  
pF  
Note: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted  
Document Number 88543  
03-Jan-03  
www.vishay.com  
1
BY448GP  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig.2 - Maximum Non-Repetitive Peak  
Forward Surge Current  
Fig.1 - Forward Current Derating Curve  
50  
40  
30  
20  
1.5  
T
= 50°C  
A
60 Hz Resistive or  
Inductive Load  
8.3ms Single Half Sine-Wave  
1.25  
1.0  
T = 25°C  
J
0.375" (9.5mm)  
Lead Length  
No Load Condition  
0.75  
0.5  
Rated Load Conditions  
(JEDEC Method)  
Capacitance Load  
Ipk/I = 5.0  
10  
0
AV  
0.25  
0
10  
20  
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Ambient Temperature (°C)  
Number of Cycles at 60 Hz  
Fig.3 - Typical Instantaneous Forward  
Characteristics  
Fig.4 - Typical Reverse Characteristics  
10  
10  
1
T = 150°C  
J
T = 125°C  
J
1
T = 25°C  
J
0.1  
0.1  
Pulse Width = 300µs  
1% Duty Cycle  
T = 25°C  
J
0.01  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
Instantaneous Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Fig.5 - Typical Junction Capacitance  
30  
10  
T = 25°C  
J
f = 1.0 MHz  
Vsig = 50mVp-p  
1
1
10  
100  
Reverse Voltage (V)  
www.vishay.com  
2
Document Number 88543  
03-Jan-03  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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