BY500-800/4H-E3 [VISHAY]

DIODE 5 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode;
BY500-800/4H-E3
型号: BY500-800/4H-E3
厂家: VISHAY    VISHAY
描述:

DIODE 5 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

文件: 总4页 (文件大小:296K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BY500-100 thru BY500-800  
Vishay General Semiconductor  
Soft Recovery Fast-Switching Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
5.0 A  
100 V to 800 V  
200 A  
200 ns  
IR  
10 µA  
VF  
1.35 V  
DO-201AD  
Tj max.  
125 °C  
Features  
Mechanical Data  
• Fast switching for high efficiency  
• Low forward voltage drop  
• Low leakage current  
Case: DO-201AD, molded epoxy body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in medium frequency rectification of switching  
mode power supplies, inverters, converters, TV san-  
ning, Ultrasonic-system, speed controlled DC motors,  
low RF interference and free wheeling diode circuit.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols BY500-100 BY500-200 BY500-400 BY500-600 BY500-800 Units  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
400  
280  
400  
5.0  
600  
420  
600  
800  
560  
800  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TL = 45 °C  
IF(AV)  
Peak forward surge current 10ms single half sine-  
wave superimposed on rated load at TA = 25 °C  
IFSM  
200  
A
Maximum repetitive peak forward surge  
Operating junction temperature range  
Storage temperature range  
IFRM  
TJ  
10  
A
- 50 to + 125  
- 50 to + 150  
°C  
°C  
TSTG  
Document Number 88544  
10-Oct-05  
www.vishay.com  
1
BY500-100 thru BY500-800  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Maximum  
Test condition  
at 5.0 A  
Symbols BY500-100 BY500-200 BY500-400 BY500-600 BY500-800 Units  
VF  
1.35  
V
instantaneous  
forward voltage  
Maximum DC reverse  
current at rated DC  
blocking voltage  
TA= 25 °C  
TA= 100 °C  
IR  
10  
1.0  
µA  
mA  
Maximum reverse  
recovery time (1)  
trr  
IRM(REC)  
CJ  
200  
2.0  
28  
ns  
A
Maximum reverse  
recovery current  
at IF = 1.0 A, VR = 30 V,  
di/dt = 50 A/µs, Irr = 10 % IRM  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
pF  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Notes:  
Symbols BY500-100 BY500-200 BY500-400 BY500-600 BY500-800 Units  
RθJA 22 °C/W  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length with both leads to heat sink  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
6.0  
5.0  
4.0  
3.0  
2.0  
200  
100  
TL = Lead Temperature  
0.375" (9.5mm)  
Lead Length  
Non-Repetitive  
0.8 x 0.8 x 0.04"  
(20 x 20 x 1mm)  
Copper Heatsinks  
TA = Ambient Temperature  
Resistive or  
Inductive Load  
Repetitive  
P.C.B. Mounted on  
0.2 x 0.2" (5.5mm)  
1.0 Copper Pads  
TA = 25 °C  
10 ms Single Half Sine-Wave  
At Rated Load  
0.375" (9.5mm)  
Lead Length  
0
10  
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
Number of Cycles at 50 Hz  
Temperature (°C)  
Figure 1. Forward Current Derating Curves  
Figure 2. Maximum Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88544  
10-Oct-05  
BY500-100 thru BY500-800  
Vishay General Semiconductor  
100  
10  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
1
0.1  
TJ = 25 °C  
Pulse Width = 300 µs  
1% Duty Cycle  
10  
5
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
10  
TJ = 100 °C  
1
TJ = 50 °C  
0.1  
TJ = 25 °C  
0.01  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Package outline dimensions in inches (millimeters)  
DO-201AD  
1.0 (25.4)  
Min.  
0.210 (5.3)  
0.190 (4.8)  
Dia.  
0.375 (9.5)  
0.285 (7.2)  
1.0 (25.4)  
Min.  
0.052 (1.32)  
0.048 (1.22)  
Dia.  
Document Number 88544  
10-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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