BYG22B [VISHAY]

Super Fast Silicon Mesa SMD Rectifier; 超快速硅梅萨贴片整流


型号：	BYG22B
厂家：	VISHAY
描述：	Super Fast Silicon Mesa SMD Rectifier 超快速硅梅萨贴片整流整流二极管光电二极管局域网超快速恢复二极管
文件：	总5页 (文件大小：62K)
中文：	中文翻译
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BYG22

Vishay Telefunken

Super Fast Silicon Mesa SMD Rectifier

Features

Controlled avalanche characteristic

Glass passivated junction

Low reverse current

Low forward voltage

Soft recovery characteristic

Very fast reverse recovery time

Good switching characteristics

Wave and reflow solderable

15 811

Applications

Surface mounting

Super fast rectifier

Freewheeling diodes in SMPS and converters

Snubber diodes

Absolute Maximum Ratings

T = 25 C

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

Value

100

200

Unit

BYG22A

BYG22B

BYG22D

V =V

RRM

V =V

Peak forward surge current

Average forward current

Junction and storage

temperature range

t =10ms,

half sinewave

FSM

FAV

T =T

–55...+150

stg

Pulse energy in avalanche mode,

non repetitive

=1A, T =25 C

(BR)R

(inductive load switch off)

Maximum Thermal Resistance

T = 25 C

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T =const.

thJL

thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm 35 m Cu

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Document Number 86011

Rev. 3, 24-Jun-98

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

BYG22

Vishay Telefunken

Electrical Characteristics

T = 25 C

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I =1A

1.1

I =2A

Reverse current

V =V

RRM

V =V

, T =100 C

RRM

Reverse recovery time I =0.5A, I =1A, i =0.25A

Characteristics (T_j= 25 C unless otherwise specified)

100

T =125°C

75°C

V =V

25°C

R RM

0.1

0.01

0.1

0.01

200

3.0

120

160

0.6

1.2

1.8

2.4

94 9347

T – Junction Temperature ( °C )

94 9352

V – Forward Voltage ( V )

Figure 1. Typ. Reverse Current vs. Junction Temperature

Figure 3. Max. Forward Current vs. Forward Voltage

140

=125°C

amb

2.0

1.6

120

100

100°C

thJA

=25K/W

75°C

50°C

1.2

0.8

0.4

100K/W

125K/W

25°C

150K/W

I =0.5A, i =0.125A

200

1.0

120

160

0.2

0.4

0.6

0.8

94 9351

amb

– Ambient Temperature ( °C )

94 9353

I – Forward Current ( A )

Figure 2. Max. Average Forward Current vs.

Ambient Temperature

Figure 4. Max. Reverse Recovery Time vs.

Forward Current

www.vishay.de • FaxBack +1-408-970-5600

Document Number 86011

Rev. 3, 24-Jun-98

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BYG22

Vishay Telefunken

=125°C

amb

100°C

75°C

50°C

25°C

I =0.5A, i =0.125A

1.0

0.2

0.4

0.6

0.8

94 9354

I – Forward Current ( A )

Figure 5. Max. Reverse Recovery Charge vs.

Forward Current

1000

125K/W DC

100

t /T=0.5

t /T=0.2

t /T=0.1

t /T=0.05

t /T=0.02

Single Pulse

t /T=0.01

–5

–4

–3

–2

–1

94 9339

t – Pulse Length ( s )

Figure 6. Thermal Response

Document Number 86011

Rev. 3, 24-Jun-98

www.vishay.de • FaxBack +1-408-970-5600

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BYG22

Vishay Telefunken

Dimensions in mm

14275

www.vishay.de • FaxBack +1-408-970-5600

Document Number 86011

Rev. 3, 24-Jun-98

4 (5)

BYG22

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 86011

Rev. 3, 24-Jun-98

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