BYT12P600A [VISHAY]
Fast Recovery Silicon Power Rectifier; 快恢复硅功率整流器
| 型号： | BYT12P600A |
| 厂家： | 
VISHAY |
| 描述： | Fast Recovery Silicon Power Rectifier |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT12P/1000A
Vishay Telefunken
Fast Recovery Silicon Power Rectifier
Features
Multiple diffusion
Low switch on power losses
Good soft recovery behaviour
Fast forward recovery time
Fast reverse recovery time
Low reverse current
Very low turn on transient peak voltage
14282
Very good reverse current stability at high tem-
perature
Low thermal resistance
Applications
Fast switched mode power supplies
Freewheeling diodes and snubber diodes in motor
control circuits
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
Test Conditions
Type
Symbol
V =V
Value
1000
Unit
V
R
RRM
=Repetitive peak reverse voltage
Peak forward surge current
t =10ms,
p
I
150
A
FSM
half sinewave
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
I
I
25
12
A
A
C
FRM
FAV
T =T
j
–40...+150
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction case
Junction ambient
Test Conditions
Symbol
Value
2.0
85
Unit
K/W
K/W
R
thJC
R
thJA
Document Number 86021
Rev. 2, 24-Jun-98
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1 (5)
BYT12P/1000A
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =12A
Type
Symbol Min
Typ Max Unit
V
F
V
F
1.9
1.8
50
V
V
A
F
I =12A, T =100 C
F
j
Reverse current
V =V
V =V
R
I
I
R
RRM
RRM
R
, T =100 C
2.5
mA
ns
V
j
R
Forward recovery time
Turn on transient peak
voltage
Reverse recovery
characteristics
t
fr
350
220
I =12A, di /dt 50A/ s
F
F
V
FP
4.5
I
7.8
200
A
ns
ns
I =12A, di /dt –50A/ s,
RM
F
F
V
Batt
=200V, T =100 C
t
j
IRM
Reverse recovery time
t
rr
I =12A, di /dt –50A/ s,
F
F
V
Batt
=200V, T =100 C,
j
i =0.25xI
R
RM
I =0.5A, I =1A, i =0.25A
t
rr
65
ns
F
R
R
Characteristics (Tj = 25 C unless otherwise specified)
1000
100
10
16
12
8
R
thJA
=2K/W
5K/W
10K/W
1
4
85K/W
40
0.1
0
200
200
0
40
80
120
160
0
80
120
160
94 9398
T – Junction Temperature ( °C )
j
94 9397
T
amb
– Ambient Temperature ( °C )
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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Document Number 86021
Rev. 2, 24-Jun-98
2 (5)
BYT12P/1000A
Vishay Telefunken
100
10
20
15
10
5
1
I =12A
F
T =100°C
C
Scattering Limit
0.1
0.01
0
3.0
350
0
0.6
1.2
1.8
2.4
0
50 100 150 200 250 300
94 9396
V
– Forward Voltage ( V )
94 9399 –dI /dt – Forward Current Rate of Change ( A/ s )
F
F
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Reverse Recovery Current vs.
Forward Current Rate of Change
1000
800
250
200
150
100
I =12A
dI /dt=100A/ s
T =100°C
C
F
F
600
400
200
0
I =12A
F
T =100°C
C
50
0
21
350
0
3
6
9
12
15
18
0
50 100 150 200 250 300
94 9403
I
– Forward Current ( A )
94 9401
–dI /dt – Forward Current Rate of Change ( A/ s )
F
F
Figure 4. Reverse Recovery Charge vs. Forward Current
Figure 7. Reverse Recovery Time vs.
Forward Current Rate of Change
160
120
80
1200
1000
I =12A
T =100°C
C
F
800
600
400
200
0
I =12A
T =100°C
C
40
0
F
350
0
50 100 150 200 250 300
350
0
50 100 150 200 250 300
94 9400 –dI /dt – Forward Current Rate of Change ( A/ s )
94 9402
–dI /dt – Forward Current Rate of Change ( A/ s )
F
F
Figure 5. Reverse Recovery Time for I
vs.
Figure 8. Reverse Recovery Charge vs.
Forward Current Rate of Change
RM
Forward Current Rate of Change
Document Number 86021
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
BYT12P/1000A
Vishay Telefunken
Dimensions in mm
14276
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Document Number 86021
Rev. 2, 24-Jun-98
4 (5)
BYT12P/1000A
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86021
Rev. 2, 24-Jun-98
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