BYT41K-TR [VISHAY]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.25A, 800V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DOT-30B, 2 PIN;
| 型号： | BYT41K-TR |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.25A, 800V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DOT-30B, 2 PIN 局域网 二极管 |
| 文件： | 总5页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT41
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
• Controlled avalanche characteristics
• Miniature axial leaded
e2
• Glass passivated
• Hermetically sealed glass envelope
• Low reverse current
• High reverse voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
95 10526
Applications
General purpose rectifier
Parts Table
Part
Type differentiation
VR = 50 V @ IFAV = 1.25 A
R = 100 V @ IFAV = 1.25 A
VR = 200 V @ IFAV = 1.25 A
Package
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
DOT-30B
V
DOT-30B
DOT-30B
DOT-30B
DOT-30B
DOT-30B
DOT-30B
V
V
V
V
R = 500 V @ IFAV = 1.25 A
R = 600 V @ IFAV = 1.25 A
R = 800 V @ IFAV = 1.25 A
R = 1000 V @ IFAV = 1.25 A
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
50
Unit
V
Reverse voltage = Repetitive
peak reverse voltage
BYT41A
VR = VRRM
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
VR = VRRM
100
200
400
600
800
1000
30
V
V
V
V
V
V
A
V
V
V
V
V
R = VRRM
R = VRRM
R = VRRM
R = VRRM
R = VRRM
IFSM
Peak forward surge current
tp = 8.3 ms, half sinewave
Document Number 86024
Rev. 1.5, 14-Apr-05
www.vishay.com
1
BYT41
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
IFAV
Value
1.25
Unit
A
Average forward current
Lead length l = 10 mm, TL =
25 °C
Non repetitive reverse
avalanche energy
I(BR)R = 1 A, inductive load
ER
10
mJ
°C
Junction and storage
temperature range
Tj = Tstg
- 55 to + 175
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Part
Symbol
RthJA
Value
60
Unit
K/W
Lead length l = 10 mm, TL =
constant
on PC board with spacing 25mm
RthJA
110
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
VF
Min
Typ.
Max
1.1
Unit
Forward voltage
Reverse current
IF = 1 A
V
µA
µA
V
V
V
R = VRRM
R = VRRM, Tj = 150 °C
IR
IR
5
150
Reverse breakdown voltage
IR = 100 µA
BYT41
A
V(BR)R
50
100
200
400
600
800
1000
BYT41
B
V(BR)R
V(BR)R
V(BR)R
V(BR)R
V(BR)R
V(BR)R
trr
V
V
BYT41
D
BYT41
G
V
BYT41
J
V
BYT41
K
V
BYT41
M
V
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
2
µs
www.vishay.com
2
Document Number 86024
Rev. 1.5, 14-Apr-05
BYT41
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
100
20
18
16
14
12
10
8
f=1MHz
80
60
40
l
l
6
4
20
0
2
T =constant
L
0
30
0
5
10
15
20
25
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
l – Lead Length ( mm )
96 12151
16305
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 4. Diode Capacitance vs. Reverse Voltage
1000
1.4
1.3
V
R
= V
RRM
R
v60K/W
thJA
l=10mm
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
BYT41M
100
10
1
BYT41A
BYT41A
BYT41M
R
=110K/W
thJA
PCB: d=25mm
0
20 40 60 80 100 120 140 160 180
– Ambient Temperature ( °C )
25
50
75
100
125
150
175
16303
T
amb
96 12137
T – Junction Temperature ( °C )
j
Figure 2. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Current vs. Junction Temperature
350
300
100.000
10.000
P –Limit
R
T =175°C
j
@100%V
250
200
150
100
50
R
1.000
T =25°C
j
0.100
0.010
P –Limit
R
@80%V
R
0
0.001
25
50
75
100
125
150
175
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
16304
T – Junction Temperature ( °C )
j
96 12134
V – Forward Voltage ( V )
F
Figure 3. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 6. Max. Forward Current vs. Forward Voltage
Document Number 86024
Rev. 1.5, 14-Apr-05
www.vishay.com
3
BYT41
Vishay Semiconductors
Package Dimensions in mm
95 10524
Standard Glass Case
DOT 30 B
Weight max. 0.5g
∅ 3 max.
technical drawings
according to DIN
specifications
Cathode Identification
∅ 0.82 max.
26 min.
26 min.
4.2 max.
www.vishay.com
Document Number 86024
Rev. 1.5, 14-Apr-05
4
BYT41
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 86024
Rev. 1.5, 14-Apr-05
www.vishay.com
5
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