BYT53F-TR [VISHAY]

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.9A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2;


型号：	BYT53F-TR
厂家：	VISHAY
描述：	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.9A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
文件：	总4页 (文件大小：46K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYT53.

Vishay Telefunken

Very Fast Silicon Mesa Rectifiers

Features

Glass passivated junction

Hermetically sealed package

Low reverse current

Soft recovery characteristics

Applications

94 9539

Very fast rectifiers and switches

Switched mode power supplies

High–frequency inverter circuits

Absolute Maximum Ratings

T = 25 C

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

BYT53A V =V

BYT53B V =V

BYT53C V =V

BYT53D V =V

BYT53F V =V

BYT53G V =V

Symbol

Value

Unit

RRM

100

150

200

300

400

Peak forward surge current

t =10ms,

FSM

half sinewave

Average forward current

Junction and storage temperature range

l=10mm, T =25 C

1.9

–65...+175

FAV

T =T

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

Value

100

Unit

K/W

l=10mm, T =constant

thJA

on PC board with spacing 25mm

Electrical Characteristics

T = 25 C

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I =1A

1.1

0.9

200

I =1A, T =175 C

Reverse current

V =V

RRM

, T =150 C

Reverse recovery time I =0.5A, I =1A, i =0.25A

Document Number 86030

Rev. 4, 24-Jun-98

www.vishay.de • FaxBack +1-408-970-5600

1 (4)

BYT53.

Vishay Telefunken

Characteristics (T_j= 25 C unless otherwise specified)

120

100

2.0

1.6

1.2

0.8

0.4

V =V

half sinewave

R RM

thJA

=45K/W

l=10mm

=100K/W

thJA

PCB: d=25mm

T =constant

20 40 60 80 100 120 140 160 180

– Ambient Temperature ( °C )

15769

amb

94 9552

l – Lead Length ( mm )

Figure 1. Max. Thermal Resistance vs. Lead Length

Figure 4. Max. Average Forward Current vs.

Ambient Temperature

240

= V

RRM

220

200

180

160

140

120

100

T =175°C

thJA

BYT53G

45K/W

100K/W

BYT53F

BYT53D

T =25°C

0.1

160K/W

BYT53C

BYT53B

BYT53A

0.01

0.001

100

125

150

175

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

– Forward Voltage ( V )

15770

T – Junction Temperature ( °C )

15768

Figure 2. Max. Reverse Power Dissipation vs.

Junction Temperature

Figure 5. Max. Forward Current vs. Forward Voltage

1000

= V

T =25°C

RRM

100

125

150

175

0.1

V – Reverse Voltage ( V )

15771

T – Junction Temperature ( °C )

94 9456

Figure 3. Max. Reverse Current vs.

Junction Temperature

Figure 6. Typ. Diode Capacitance vs. Reverse Voltage

www.vishay.de • FaxBack +1-408-970-5600

Document Number 86030

Rev. 4, 24-Jun-98

2 (4)

BYT53.

Vishay Telefunken

Dimensions in mm

3.6 max.

94 9538

Sintered Glass Case

SOD 57

Weight max. 0.5g

Cathode Identification

technical drawings

according to DIN

specifications

0.82 max.

26 min.

4.2 max.

Document Number 86030

Rev. 4, 24-Jun-98

www.vishay.de • FaxBack +1-408-970-5600

3 (4)

BYT53.

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.de • FaxBack +1-408-970-5600

Document Number 86030

Rev. 4, 24-Jun-98

4 (4)

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