BYT53G-TAP [VISHAY]

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.9A, 400V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2;


型号：	BYT53G-TAP
厂家：	VISHAY
描述：	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.9A, 400V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 超快软恢复二极管快速软恢复二极管局域网
文件：	总4页 (文件大小：128K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G

www.vishay.com

Vishay Semiconductors

Ultra-Fast Avalanche Sinterglass Diode

FEATURES

• Glass passivated junction

• Hermetically sealed package

• Low reverse current

• Soft recovery characteristics

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

949539

APPLICATIONS

MECHANICAL DATA

• Very fast rectification and switches

• Switched mode power supplies

• High-frequency inverter circuits

Case: SOD-57

Terminals: plated axial leads, solderable per MIL-STD-750,

method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 369 mg

ORDERING INFORMATION (Example)

DEVICE NAME

ORDERING CODE

TAPED UNITS

MINIMUM ORDER QUANTITY

BYT53G

BYT53G-TR

5000 per 10" tape and reel

5000 per ammopack

25 000

BYT53G

BYT53G-TAP

PARTS TABLE

PART

TYPE DIFFERENTIATION

PACKAGE

SOD-57

BYT53A

V_R= 50 V; I_F(AV)= 1.9 A

BYT53B

_R= 100 V; I_F(AV)= 1.9 A

_R= 150 V; I_F(AV)= 1.9 A

_R= 200 V; I_F(AV)= 1.9 A

_R= 300 V; I_F(AV)= 1.9 A

_R= 400 V; I_F(AV)= 1.9 A

BYT53C

BYT53D

BYT53F

BYT53G

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

BYT53A

BYT53B

BYT53C

BYT53D

BYT53F

BYT53G

_R= V_RRM

I_FSM

100

150

Reverse voltage = repetitive peak reverse

voltage

See electrical characteristics

200

300

400

Peak forward surge current

t_p= 10 ms, half sine wave

l = 10 mm, T_L= 25 °C

Average forward current

I_F(AV)

1.9

Non repetitive reverse avalanche energy

Junction and storage temperature range

I_(BR)R= 1 A

E_R

°C

T_j= T_stg

- 55 to + 175

MAXIMUM THERMAL RESISTANCE (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Lead length l = 10 mm, T_L= constant

On PC board with spacing 25 mm

R_thJA

K/W

Junction ambient

R_thJA

100

Rev. 2.0, 04-Sep-12

Document Number: 86030

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G

www.vishay.com

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

1.1

0.9

UNIT

I_F= 1 A

V_F

I_R

Forward voltage

I_F= 1 A, T_j= 175 °C

_R= V_RRM

μA

Reverse current

V_R= V_RRM, T_j= 150 °C

I_R

200

Reverse recovery time

I_F= 0.5 A, I_R= 1 A, i_R= 0.25 A

t_rr

TYPICAL CHARACTERISTICS (T_amb= 25 C, unless otherwise specified)

120

100

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

VR = V_RRM

half sine wave

R_thJA= 45 K/W

l = 10 mm

R_thJA= 100 K/W

PCB: d = 25 mm

T_L= constant

20 40 60 80 100 120 140 160 180

T_amb- Junction Temperature (°C)

949552

l - Lead Length (mm)

16334

Fig. 1 - Max. Thermal Resistance vs. Lead Length

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

1000

V_R= V_RRM

T_j= 175 °C

100

T_j= 25 °C

0.1

0.01

0.001

100

125

150

175

0.5

1.5

V_F- Forward Voltage (V)

Fig. 2 - Max. Forward Current vs. Forward Voltage

2.5

16333

16335

T_j- Junction Temperature (°C)

Fig. 4 - Max. Reverse Current vs. Junction Temperature

Rev. 2.0, 04-Sep-12

Document Number: 86030

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G

www.vishay.com

Vishay Semiconductors

220

200

180

160

140

120

100

f = 1 MHz

V_R= V_RRM

P_R- Limit

at 100 % V_R

P_R- Limit

at 80 % V_R

100

125

150

175

0.1

100

16337

16336

T_j- Junction Temperature (°C)

V_R- Reverse Voltage (V)

Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 6 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

26 (1.024) min.

4 (0.157) max.

20543

Rev. 2.0, 04-Sep-12

Document Number: 86030

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

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

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Revision: 08-Feb-17

Document Number: 91000

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